12065G105AT2A
Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with
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MRF7S18125BH
MRF7S18125BHR3
MRF7S18125BHSR3
MRF7S18125BHR3
12065G105AT2A
j292
MRF7S18125
F 365 R
A114
A115
AN1955
C101
JESD22
RF35
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 5,12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110
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MRF6P21190HR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1
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MRF6S9060N
MRF6S9060NR1
MRFE6S9060NR1.
PCN12895
MRF6S9060NBR1
MRF6S9060NR1
MRF6S9060NBR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to
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MRF7S19100N
MRF7S19100NR1
MRF7S19100NBR1
MRF7S19100NR1
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MRF6S19060N
Abstract: No abstract text available
Text: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF6S19060N
IS--95
MRF6S19060NR1
MRF6S19060NBR1
MRF6S19060N
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRFE6S9060N
MRFE6S9060NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
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MRF6S18140H
MRF6S18140HR3
MRF6S18140HSR3
IS-95
MRF6S18140HR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21110H
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
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T491C105K0
Abstract: No abstract text available
Text: Document Number: MRF6P21190HR6 Rev. 5,12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF6P21190HR6
MRF6P21190HR6
T491C105K0
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MRF6S21060N
Abstract: CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1 MRF6S21060NR1
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF6S21060N
MRF6S21060NR1
MRF6S21060NBR1
MRF6S21060N
CRCW12061001FKEA
j8084
250GX-0300-55-22
AN1955
CDR33BX104AKYS
JESD22-A113
JESD22-A114
MRF6S21060NBR1
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EEEFK1H101P
Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF6P18190H
MRF6P18190HR6
EEEFK1H101P
A114
A115
AN1955
C101
JESD22
MRF6P18190HR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF5S21100H
MRF5S21100HR3
MRF5S21100HSR3
MRF5S21100H
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mcr63
Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21110H
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
mcr63
T491C105K050AT
A114
A115
AN1955
C101
JESD22
MRF7S21110HSR3
mcr63v477m
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Resistor mttf
Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION
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MRF6S9060N
MRF6S9060NR1
MRFE6S9060NR1.
PCN12895
MRF6S9060NBR1
MRF6S9060NBR1
Resistor mttf
MRFE6S9060NR1
A114
A115
C101
JESD22
MRF6S9060N
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MRF6S19060N
Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1
Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6S19060N
MRF6S19060NR1
MRF6S19060NBR1
MRF6S19060N
A113
A114
A115
AN1955
C101
JESD22
MRF6S19060NBR1
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465B
Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6S18140H
MRF6S18140HR3
MRF6S18140HSR3
MRF6S18140HR3
465B
A114
A115
AN1955
JESD22
MRF6S18140HSR3
Nippon capacitors
Nippon chemi
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MMRF1315N
MMRF1315NR1
IS--95
7/2014Semiconductor,
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MHVIC910HR2
Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
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MW6S010N
MW6S010NR1
MW6S010GNR1
MHVIC910HR2
CRCW12061001FKEA
ATC700A331JT150XT
1265A
ATC700a
FREESCALE PACKING
A113
A114
AN1955
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R04350B
Abstract: MW7IC2725GNR1 wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725N MW7IC2725NBR1
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 2, 10/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on - chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage
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MW7IC2725N
MW7IC2725N
MW7IC2725NR1
MW7IC2725GNR1
MW7IC2725NBR1
R04350B
wimax spectrum mask
A114
A115
AN1977
AN1987
JESD22
MW7IC2725NBR1
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ATC100B102JP50XT
Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi
Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with
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MRF6P9220HR3
MRFE6P9220HR3.
PCN12895
MRF6P9220HR3
20ers,
MRF6P9220H
ATC100B102JP50XT
nippon capacitors
JESD22
A114
AN1955
ATC100B101JP500XT
Nippon chemi
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NIPPON CAPACITORS
Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110
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MRF6S21190H
MRF6S21190HR3
MRF6S21190HSR3
MRF6S21190HR3
NIPPON CAPACITORS
p 150 54
465B
A114
A115
AN1955
JESD22
MRF6S21190H
MRF6S21190HSR3
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j-12000
Abstract: j6201 J557 ATC100B0R6BT250XT J1069 ATC100B8R2BT250XT GRM31CR71H475KA12L A114 A115 AN1987
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2240N Rev. 0, 11/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage
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MW7IC2240N
MW7IC2240N
MW7IC2240NR1
MW7IC2240GNR1
MW7IC2240NBR1
j-12000
j6201
J557
ATC100B0R6BT250XT
J1069
ATC100B8R2BT250XT
GRM31CR71H475KA12L
A114
A115
AN1987
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250GX-0300-55-22
Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed
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MRF6VP121KH
MRF6VP121KHR6
MRF6VP121KHSR6
250GX-0300-55-22
Arlon
AN1955
MRF6VP121KHSR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21110H
MRF7S21110HR3
MRF7S21110HSR3
MRF7S21110HR3
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