80N80

Abstract: ENS-60
Contextual Info: MEMORIES Pseudo Static RAMs ★ Under developm ent C apacity C onfiguration Model No. A ccess tim e ns 60 LH5P860 70 80 100 120 150 - 64k x 8 LH5PB64 512k Pseudo Static RAM 32kx 16 LH5P1632 LH5P8128 1M 126kx8 LH5P8129 Low voltage operation 4M ★LH5PV8512

Contextual Info: □PM V<" P - M icrosvstem s In I~-c D ense-Pac - - - -C - DPS128M8A h i g jn h s ed rA am c n ik a prce c u c L etK M iiL ¿ - -O 128K X 8 C M O S SRAM M O N O LITH IC ADVANCED INFORMATION D ESC R IP TIO N : T h e D P S 1 2 8 M 8 A is a high speed m o no lithic

27C101

Abstract: 27C101A u4000
Contextual Info: JUL « fi ’ VT« PUMA 2U4000 molaic PUMA 2U4000-12/15 Issue 1.2 : July 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. / 4,194,304 bit CMOS High Speed UV EPROM Features Fast Access times of 120/150 ns Pin grid array gives 2:1 improvement over DIL.