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    LH5P8129 Search Results

    LH5P8129 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH5P8129 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129-10 Sharp CMOS 1M(128K x 8)CS-control pseudo-static RAM Original PDF
    LH5P8129-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5P8129-60 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129-60 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5P8129-60L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5P8129-80 Sharp CMOS 1M(128K x 8)CS-control pseudo-static RAM Original PDF
    LH5P8129-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5P8129-80L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5P8129N-10 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129N-60 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129N-80 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129T-10 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129T-60 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129T-80 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129TR-10 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129TR-60 Sharp CMOS 1M (128K x 8) CS-Control Pseudo-Static RAM Original PDF
    LH5P8129TR-80 Sharp CMOS 1M(128K x 8)CS-control pseudo-static RAM Original PDF

    LH5P8129 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1M STATIC RAM "32 PIN"

    Abstract: transistor A16 32-PIN LH5P8129 LH5P8129-60 LH5P8129-80
    Text: CMOS 1M 128K x 8 CS-Control Pseudo-Static RAM LH5P8129 FEATURES • 131,072 × 8 bit organization PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access times (MAX.): 60/80/100 ns RFSH 1 32 • Cycle times (MIN.): 100/130/160 ns VCC A16 2 31 A15 • Single +5 V power supply


    Original     		PDF LH5P8129 32-PIN 32TSOP 32-pin, 600-mil DIP032-P-0600) 1M STATIC RAM "32 PIN" transistor A16 LH5P8129 LH5P8129-60 LH5P8129-80

    Untitled

    Abstract: No abstract text available
    Text: LH5P8129 CMOS 1M 128K x 8 CS-Control Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8129 is a 1M bit Pseudo-Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns


    OCR Scan     		PDF LH5P8129 32-pin, 600-mil 525-mil 32-PIN LH5P8129

    80N80

    Abstract: ENS-60
    Text: MEMORIES Pseudo Static RAMs ★ Under developm ent C apacity C onfiguration Model No. A ccess tim e ns 60 LH5P860 70 80 100 120 150 - 64k x 8 LH5PB64 512k Pseudo Static RAM 32kx 16 LH5P1632 LH5P8128 1M 126kx8 LH5P8129 Low voltage operation 4M ★LH5PV8512


    OCR Scan     		PDF LH5P860 LH5PB64 LH5P1632 LH5P8128 126kx8 LH5P8129 LH5PV8512 LH5P832/D/N-10 28SK-DIP/ 28SOP 80N80 ENS-60

    Untitled

    Abstract: No abstract text available
    Text: LH5P8129 FEATURES • 131,072 x 8 bit organization CMOS 1 M 128K x 8 CS-Control Pseudo-Static RAM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TO P V IE W • Access times (MAX.): 60/80/100 ns • Cycle times (MIN.): 100/130/160 ns A l6 A i4 • Single +5 V power supply


    OCR Scan     		PDF LH5P8129 32-pin, 600-mil 525-mil LH5P8129 32TSOP

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH5P8129 FEATURES DESCRIPTION • 131,072 • Access times MAX. : 60/80/100 ns • Cycle times (MIN.): 100/130/160 ns • x 8 bit organization Power consumption: Operating: 572/440/358 mW (MAX.) Standby: 275 (iW (MAX.) in self-refresh mode •


    OCR Scan     		PDF LH5P8129 5P8129 LH5P8129 -----------80L 32-pin, 600-mil DIP32-P-600)

    LH5P8129-80

    Abstract: No abstract text available
    Text: PRELIMINARY LH5P8129 FEATURES • 131,072 x 8 bit organization • Access times MAX. : 60/80/100 ns • Cycle times (MIN.): 100/130/160 ns • Power consumption: Operating: 572/440/358 mW (MAX.) Standby: 275 jxW (MAX.) in self-refresh mode • CS Control Type


    OCR Scan     		PDF LH5P8129 LH5P8129 32-pin, 600-mil DIP32-P-600) 525-mil OP32-P-525) LH5P8129-80

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH5P8129 DESCRIPTION FEATURES • 131,072 • Access times MAX. : 60/80/100 ns • Cycle times (MIN.): 100/130/160 ns • CMOS 1M (128K X 8) CS-Control Pseudo-Static RAM x 8 bit organization Power consumption: Operating: 572/440/358 mW (MAX.)


    OCR Scan     		PDF LH5P8129 LH5P8129 32-pin, 525-m

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Pseudo Static RAMs w B it co n fig u ra tio n C apacity Model No. A cce ss tim e n s 60 - 256k x8 70 80 100 120 150 LH5P832 LH5P860 x8 LH5P864 512k LH5P1632 x 16 LH5P8128 1M Pseudo Static RAM x8 LH5P8129 x8 LH5PV8512 x 16 LH5PV16256 x 16 LH6P82


    OCR Scan     		PDF LH5P832 LH5P860 LH5P864 LH5P1632 LH5P8128 LH5P8129 LH5PV8512 LH5PV16256 LH6P82 LH5P832/D/N-10

    Untitled

    Abstract: No abstract text available
    Text: LH5P8129 FEATURES • 131,072 x 8 bit organization CMOS 1 M 128K x 8 CS-Control Pseudo-Static RAM PIN CONNECTIONS 3 2 -P IN D IP 3 2 -P IN S O P T O P V IE W • Access tim es (MAX.): 60/80/100 ns f RFSH C • Cycle tim es (MIN.): 100/130/160 ns • Single +5 V power supply


    OCR Scan     		PDF LH5P8129 32-pin, 600-mil 525-mil

    658128

    Abstract: KM658128 TC518128 HM658128ALP-12 HM658128ALFP-8 HM658128P-12 tc518128apl HM658128ADP-12 HM658128ALP-8 KM658128-10L
    Text: - 152 IM P s e u d o A X m & ÄSieH ít £ ca TAAC ns TCAC max (ns) V S t a t i c * V 7 R A M (1 31 0 7 2 x 8 ) 3 2 PI N ft TOE max (ns) TOH min (ns) TOD max (ns) TWP (ns) TDS min (ns) 6 5 8 1 2 8 A TDH min (ns) TWD min (ns) TWR max (ns) V D D or V CC


    OCR Scan     		PDF HM658128ADFP HMB58128ADFP-12 HM658128ADFP-8 TC518128AP1/AFI/AFWI-10LV TC5181Z8API/AFI/AFWL-12LV TC518128APL/AFL/AFWL-80LV TC518128APL/ASPL/AFL/AFWI TC518128AP1 /AFWL-12 TC518t2SWl/ASPL/AfL/AFÂ 658128 KM658128 TC518128 HM658128ALP-12 HM658128ALFP-8 HM658128P-12 tc518128apl HM658128ADP-12 HM658128ALP-8 KM658128-10L

    LH64256BK70

    Abstract: Lh64256bk-70
    Text: MEMORIES ★Under development • Pseudo S tatic RAMs Gipäfifty rüm ^H M o n Modal No. worfexblta t LH5P832/D/N-10 256k Supply.currant AOOMtttM# Cyetotime operating/standby (na)MAX. (na) MIN. 100 160 (mA) MAX. Supply voltage M Control signal« 65/3 32k x 8


    OCR Scan     		PDF LH5P832/D/N-10 28DIP/ 28SK-DIP/ 28SOP 32DIP/32SOP 32SOP 40DIP/40SOP LH5P832/D/N-12 LH5P860/N-80 LH5P864N-80 LH64256BK70 Lh64256bk-70

    LH61664AK-50

    Abstract: LH61665AK lh61665 LH5PV8512 16256S
    Text: PSEUDO SRAM/DYNAMIC RAM • PSEUDO SRAMs ♦ Features • Random access memory with ease of use equivalent to SRAM. Supply current MAX. C apacity Bit C onfiguration 256k x 8 Model No. LH 5P 832/D /N -10/12 Access time ns MAX. Cycle time (ns) MIN. O perating


    OCR Scan     		PDF LH5P864N 5P1632/N-80/15 32SOP DIP/40SOP 32DIP/32SOP/32TSOP 32TSOP DIP/32SOP/32TSOP( /32TS 44TSO LH61664AK-50 LH61665AK lh61665 LH5PV8512 16256S

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Cross Reference

    Abstract: Pseudostatic RAM TC51832
    Text: Pseudo-Static RAM Cross Reference PSEUDO-STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 32K 64K 128K X X X 8 8 8 128K x 8 w/CS 512K 2-50 X 8 SHARP MODEL LH5P832 LH5P864 LH5P8128 COMPETITIVE VENDOR COMPETITIVE MODEL ACCESS TIME PACKAGE OPTIONS Hitachi


    OCR Scan     		PDF LH5P832 HM65256B TC51832 LH5P864 HM658128A TC518128A TC518129A HM658512 TC518512 LH5P8128 Cross Reference Pseudostatic RAM TC51832

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


    OCR Scan     		PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES SST/^-SS*!WW9!»a«i;!!WWS«»i ★ C apacity C onfiguration M odel No. 32k x 8 Under development A cce ss tim e n s 60 70 80 100 120 150 5 832 -i LH P -j LH P -j LH P -j LH P -j LH P H LH P 5 860 64k x 8 5 864 512k 3 2 k x 16 5 8128 128k x 8 1M


    OCR Scan     		PDF 4QDIP/40SOP 32TSOP 32TSOHit 44TSOP

    256k x 4

    Abstract: No abstract text available
    Text: MEMORIES ★Under development Capacity Configuration Model No. Access time ns 60 256k 32k x 8 70 Package SK BO 100 120 150 DIP SOP TSOP DIP LH5P832 — 28 28 LH5P860 n 28 32 64k x 8 LH5P864 — 32 512k Pseudo static RAM 32k x 16 LH5P1632 I- — 40 40 LH5P8128


    OCR Scan     		PDF LH5P832 LH5P860 LH5P864 LH5P1632 LH5P8128 LH5P8129 LH5P8512 LH21256 LH64256B 256k x 4