RA18H1213G
Abstract: RA18H1213G-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
RA18H1213G-01
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902XB
Abstract: GIGAFIL DFCH31G74HDJAA DFCB35G80LBHAA microwave product DFCB32G14LBJAA DFCB21G57LDJAB DFCH32G44HDHAA DFCH41G96HDJAA murata dfch
Text: !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specificaions before ordering.
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DFCH31G54HDJAA
Abstract: LFD31859MDP1A009 LFB321G61SA1A555 LFD212G45D dfch3860mhdjaa SAFSD1G57FA0T00 LFL18924MTC1A052 1805MHz DFCB25G80 DFCB21G57LBJAB
Text: 通信设备用滤波器 05.01.28 射频／局部用 介质带通滤波器 GIGAFILr o DFCB系列800/900MHz 0.7 0.7 1.2 5.75±0.15 8.2±0.2 5.8±0.2 In Attenuation (dB) 1.2 0.7 Out Tolerances unless otherwise specified : ±0.1 (in mm) 中心频率 (MHz) 频带宽
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DFCB800/900MHz
DFCB2836MLDJAA
DFCB3815MLDJAA
DFCB2836MLDJAA
DFCB3836MLDJAA
DFCB2841MLEJAA
DFCB3841MLEJAA
DFCB3860MLDJAA
DFCB2866MLEJAA
DFCB3866MLEJAA
DFCH31G54HDJAA
LFD31859MDP1A009
LFB321G61SA1A555
LFD212G45D
dfch3860mhdjaa
SAFSD1G57FA0T00
LFL18924MTC1A052
1805MHz
DFCB25G80
DFCB21G57LBJAB
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CTJ-USB-8-08-M45F10223LXX-P0-S
Abstract: No abstract text available
Text: 1 2 3 4 5 6 7 8 9 A A B B C C D D E E F F RoHS compliant Rev. Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35 1 2 3 4 Date Central Components Manufacturing 12/19/05 440 Lincoln Blvd., Middlesex, New Jersey 08846
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CTJ-USB-8-08-M45F10223LXX-P0-S
100KHz0
350uH
Nylon66
UL94V-0
SUS430
C2680R-H
UL94V-0,
CTJ-USB-8-08-M45F10223LXX-P0-S
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DFCB2915MLDJAA
Abstract: LFB182g45 DFCB2912MLDJAA SAFSD1G57FA0T00 LFB215G37SG8A180 transistor smd marking code ACL LFB212G45SG8A192 SMD marking code ACL LFB182G45SG9A246 SAFCC897MKA0T00
Text: O81E.pdf 03.12.10 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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beforA0T00
1980MHz)
1920MHz
200ohm//22nH
50ohm
DFCB2915MLDJAA
LFB182g45
DFCB2912MLDJAA
SAFSD1G57FA0T00
LFB215G37SG8A180
transistor smd marking code ACL
LFB212G45SG8A192
SMD marking code ACL
LFB182G45SG9A246
SAFCC897MKA0T00
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
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RA18H1213G-101
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the
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RA18H1213G
RA18H1213G
18-watt
30-GHz
RA18H1213G-101
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SAFeB1G84FA0F00
Abstract: DFCH31G54HDJAA LFL212G45TC1A007 SAFEB942MFL0F00 LFL215G51TC1A149 LFB32315MSC1-619 SAFEF1G95KA0F00 DFCB25G25LAHAA DFCB2915MLDJAA TDMA800
Text: O81E.pdf 03.12.10 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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befor24MHz
849MHz)
824MHz
50ohm
SAFeB1G84FA0F00
DFCH31G54HDJAA
LFL212G45TC1A007
SAFEB942MFL0F00
LFL215G51TC1A149
LFB32315MSC1-619
SAFEF1G95KA0F00
DFCB25G25LAHAA
DFCB2915MLDJAA
TDMA800
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transistor marking code 18W
Abstract: RA18H1213G RA18H1213G-101 f1270 Transistor 18W on
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
transistor marking code 18W
RA18H1213G-101
f1270
Transistor 18W on
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DFCB21G57LDJAB
Abstract: DFCH31G54HDJAA DFCB32G14LBJAA 2275MHz dfch3860mhdjaa 1664M DFCB2836MLDJAA DFCB21g57 DFCB35G80LBHAA DFCB32
Text: Filters for Communication Equipment 03.02.28 for RF/Local Dielectric Filters GIGAFILr o DFCB Series 800/900MHz 0.7 0.7 1.2 5.75±0.15 8.2±0.2 5.8±0.2 In Attenuation (dB) 1.2 0.7 Out 10 10 20 20 30 30 40 40 Return Loss (dB) Pass Band 3.0max. Tolerances unless
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800/900MHz
DFCB2836MLDJAA
DFCB3815MLDJAA
DFCB2836MLDJAA
DFCB3836MLDJAA
DFCB2841MLEJAA
DFCB3841MLEJAA
DFCB3860MLDJAA
DFCB2866MLEJAA
DFCB3866MLEJAA
DFCB21G57LDJAB
DFCH31G54HDJAA
DFCB32G14LBJAA
2275MHz
dfch3860mhdjaa
1664M
DFCB21g57
DFCB35G80LBHAA
DFCB32
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DFCB21G57LDJAB
Abstract: DFCB35G59LAHAA DFCB35G80LBHAA DFCB31G84LBJAA
Text: O81E.pdf 03.12.10 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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1980MHz)
DFCB32G32LBJAA
2227MHz)
DFCB32G33LBJAA
2240MHz)
DFCB32G44LBJAA
Fo-250MHz)
DFCB32G45LBJAA
DFCB35G25LAHAA
DFCB21G57LDJAB
DFCB35G59LAHAA
DFCB35G80LBHAA
DFCB31G84LBJAA
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DFCB35G80LBHAA
Abstract: DFCB21G57LDJAB DFCB2915MLDJAA DFCB25G80LBHAA dfcb32g45lbjaa DFCH3942MHDJAA DFCB22G44LBJAA DFCH22G44HDHAA DFCB21G89LDJAA DFCB32G32LBJAA
Text: O81E.pdf 03.12.10 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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DFCH32G15HDHAB
2050MHz)
DFCH32G44HDHAA
Fo-250MHz)
DFCH32G45HDHAA
DFCH32G48HDHAA
Fo-270MHz)
DCS1800
DFCH41G74HDJAA
DFCB35G80LBHAA
DFCB21G57LDJAB
DFCB2915MLDJAA
DFCB25G80LBHAA
dfcb32g45lbjaa
DFCH3942MHDJAA
DFCB22G44LBJAA
DFCH22G44HDHAA
DFCB21G89LDJAA
DFCB32G32LBJAA
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RA18H1213G
Abstract: RA18H1213G-101 263rd dd408
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
RA18H1213G-101
263rd
dd408
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RA18H1213G-101
Abstract: f1270 RA18H1213G package marking 18w 26 3 pin
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
RA18H1213G-101
f1270
package marking 18w 26 3 pin
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836XG
Abstract: DFCH31G54HDJAA DFCB2915MLDJAA 2140CD DFCB35G80LBHAA DFCB22G44LBJAA DFCH32G14HDHA 902XB dfyk61g95lbncb dfcb
Text: !お願い 製品によっては守らないと発煙、発火等にいたる可能性のある定格や!注意（保管・使用環境、定格上の注意、実装上の注意、取扱上の注意）を当PDFカタログに記載して おりますので必ずご覧ください。なお、当PDFカタログには、代表的な仕様のみを記載しておりますので、ご注文にあたっては詳細な仕様が記載されている納入仕様書の内容
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800/900MHz
55GHz
CDMA800:
AMPS/CDMA800:
DCS1800:
836XG
DFCH31G54HDJAA
DFCB2915MLDJAA
2140CD
DFCB35G80LBHAA
DFCB22G44LBJAA
DFCH32G14HDHA
902XB
dfyk61g95lbncb
dfcb
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murata SAW
Abstract: No abstract text available
Text: NSVS1148 Oct. 2004 JRC SAW FILTER NSVS1148 Application 1220MHz Digital TV Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Typ. Input and Output Impedance
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NSVS1148
NSVS1148
1220MHz
1224MHz
1170MHz
1270MHz
murata SAW
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MXF5050
Abstract: MXF3535 LC Filters MXF5050L low-pass filter inductor
Text: Multilayer Chip LC Filters MXF Series TDK multilayer chip LC filters have a completely monolithic structure in which dielectric materials and conductive materials are alternately layered to form capacitors. Then ferrite and conductive materials are alternately layered to form inductors or transformers. These different materials are
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MXF2525
MXF3225
MXF3535
MXF5050
MXF5050
MXF3535
LC Filters
MXF5050L
low-pass filter inductor
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La 7676
Abstract: nextel coating FG4605 FG-41 MBC800 FG4807 antenex mbc FG4103 162-168MHZ
Text: FIBERGLASS O M N ID IR E C TIO N A L A N T E N E X ' G o ld F ib e rg la s s Base Station antennas are c o ll inear designs enclosed in a high density fiberglass , w hich is covered with an u ltra v io le t in h ib itin g la y e r o f p rotective coating.
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ana2406
MBC800
FG8060
B8063
La 7676
nextel coating
FG4605
FG-41
FG4807
antenex mbc
FG4103
162-168MHZ
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5MHz LC Band Pass Filter
Abstract: MXF5050L tdk cd series capacitors MXF5050 LC Filters TDK filters
Text: Multilayer Chip LC Filters MXF Series FEATURES • Shielded construction to eliminate crosstalk, and suitable for high mounting density. • A completely monolithic structure in which dielectric materials and conductive materials are alternately layered form capacitors. Thereafter the ferrite and
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FR 9120
Abstract: DFCB35G80LBHAA DFCH31G54HDJAA DFCB21G57LDJ DFCB25G80LBHAB DFY*902 DFCB25G80 lj229 400MHz filters DFCB31G84LB
Text: Filters for Communication Equipment Antennas/Duplexers Dielectric Duplexers ' 800/900MHZ Pass Band Tx S purious (Tx) Part Number DFYH7815MHDJAA DFYG7836MLEJAA DFYG7836MLEJAB DFYH7836MHCJAA DFYH7836MHDJAA DFYH7836MHDJAB DFYK7836MLDJAC DFYK7836MLEJAA DFYH7836MHDJAC
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800/900MHZ
850-870MHZ)
894MHz)
849MHz)
FR 9120
DFCB35G80LBHAA
DFCH31G54HDJAA
DFCB21G57LDJ
DFCB25G80LBHAB
DFY*902
DFCB25G80
lj229
400MHz filters
DFCB31G84LB
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