HY62UF16201A-I
Abstract: HY62UF16201A
Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others
|
Original
|
HY62UF16201A
128Kx16bit
HYUF621Ac
100ns
HY62UF16201A-I
|
PDF
|
555H
Abstract: MX29F200B MX29F200T
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
|
Original
|
MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
555H
MX29F200B
MX29F200T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900* Weight FEATURES Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical Access Times of 70ns (SRAM) and 120ns (FLASH)
|
Original
|
WSF128K16-XXX
128Kx16
WSF128K16-H1X
WSF128K16-XG1UX1
120ns
66-pin,
ICCx32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MEMORY MODULE MRAM 128Kx16-SOP 3DMR2M16VS2427 Magnetoresistive Ram MODULE 2 Mbit MRAM organized as 128Kx16 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Organized as 128Kx16. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access
|
Original
|
128Kx16-SOP
3DMR2M16VS2427
128Kx16
128Kx16.
MMXX00000000XXX
3DFP-0427-REV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES Access Times of 35ns SRAM and 90ns (FLASH) Weight: Packaging • WSF2816-39G2UX - 8 grams typical
|
Original
|
WSF2816-39XX
128Kx16
512Kx16
WSF2816-39G2UX
WSF2816-39H1X
ICCx16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others
|
Original
|
HY62QF16201A
128Kx16bit
LL/SL-pa6201A
HYQF621Ac
100ns
|
PDF
|
23265
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advance Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview Features The N02L1618C1A is an integrated memory
|
Original
|
N02L1618C1A
128Kx16
N02L1618C1A
N02L163WN1A,
3265-A
23265
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
|
Original
|
MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/20/1999
PM0549
|
PDF
|
29F200T
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
|
Original
|
MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
29F200T
|
PDF
|
SD10
Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)
|
Original
|
WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX1
WSF128K16-XG1TX
66-pin,
SD10
SD13
SD14
SD15
WSF128K16-XXX
scs 2003
|
PDF
|
SM-1994
Abstract: No abstract text available
Text: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The
|
Original
|
HY62UF16200/
HY62QF16200/
HY62EF16200/
HY62SF16200
128Kx16bit
HY62UF16200
HY62QF16200
HY62EF16200
16bits.
SM-1994
|
PDF
|
SM-1994
Abstract: No abstract text available
Text: HY62UF16201 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201 is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62UF16201 uses high performance full CMOS process technology and designed for high speed low power circuit
|
Original
|
HY62UF16201
128Kx16bit
16bit.
48ball
SM-1994.
SM-1994
|
PDF
|
A82DL1632TG-70UF
Abstract: DL1632
Text: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit
|
Original
|
A82DL16x2T
Bit/1Mx16
128Kx16
MO-219
A82DL1632TG-70UF
DL1632
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
|
Original
|
HY62LF16206B-DT12C
128Kx16bit
HY62LF16206B
16bits.
120ns
|
PDF
|
|
|
tray matrix bga
Abstract: N02L6181AB27I
Text: N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Features Overview • Single Wide Power Supply Range 1.65 to 2.2 Volts The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device
|
Original
|
N02L6181A
128Kx16
N02L6181A
N02L63W3A,
tray matrix bga
N02L6181AB27I
|
PDF
|
F28335
Abstract: tms320f28335 i2c example TMS320F28335 F28335 kit eZdsp F28335 TMDSEZ28335 adc tms320f28335 C2000 texas instruments uart IEEE 1149.1 JTAG
Text: TMS320F28335 eZdsp Starter Kit TMDSEZ28335 Product Information Description The F28335 eZdsp starter kit is a complete software development platform for the TMS320F2833x series of floating-point Digital Signal Controllers. The eZdsp kit includes an F28335 target board that features integrated JTAG emulation, 128Kx16 asynchronous SRAM,
|
Original
|
TMS320F28335
TMDSEZ28335
F28335
TMS320F2833x
128Kx16
RS-232
Co232
tms320f28335 i2c example
F28335 kit
eZdsp F28335
TMDSEZ28335
adc tms320f28335
C2000
texas instruments uart
IEEE 1149.1 JTAG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
|
Original
|
MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0549
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary b q 4 0 2 4 / b q 4 0 2 4 Y BENCHMARQ 128KX16 Nonvolatile SRAM Features General Description > D ata retention in the absence of The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The in te g ra l co n tro l circ u itry an d
|
OCR Scan
|
128KX16
bq4024
152-bit
40-pin
10-year
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE WSF128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)
|
OCR Scan
|
WSF128K16-XXX
128Kx16
120nS
66-pin,
256Kx8
|
PDF
|
256x16* STATIC RAM
Abstract: c28w Video RAM SIO12 AK5216128WV-10 AK5216128WV-12 AK5216128WV-80 SIo-12 BY164 48aa50
Text: ACCUTEK MICROCIRCUIT 31E D • 01071=47 GOGOCia? T ■ ACU T -4 6 -2 3 -2 0 ACCUTEK MICROCIRCUIT AK5216128WV 128Kx 16/256x16 Dual Port Video Ram The Accutek AK5216128 is a 2 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 128Kx16 DRAM
|
OCR Scan
|
T-46-23-20
AK5216128WV
128Kx
16/256x16
AK5216128
33MHz.
128Kx16bit
256x16
AK5216128WV-10
256x16* STATIC RAM
c28w
Video RAM
SIO12
AK5216128WV-10
AK5216128WV-12
AK5216128WV-80
SIo-12
BY164
48aa50
|
PDF
|
128KX16
Abstract: DQ10C
Text: BENCHMARQ_ bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit sta tic RAM organized as 131,072 w ords by 16 bits. The in te g ral control circu itry an d lith
|
OCR Scan
|
bq4024/bq4024Y
128Kx16
40-pin
10-year
bq4024
152-bit
DQ10C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
|
OCR Scan
|
SST32LH802
128Kx16
SST32LH802
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX •lì Hi-R£LiASIÜTY PRODUCT 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges ■ Access Tim es o f 35ns SRAM and 70ns (FLASH) ■ TTL C om patible Inputs and O utputs ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH)
|
OCR Scan
|
WSF128K16-XXX
128Kx16
120ns
01HXX
01HYX
02HXX
02HYX
|
PDF
|
25X1
Abstract: bq4024 bq4024Y
Text: bq4024/bq4024Y BENCHMARQ 128Kx16 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of power T he CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 w ords by 16 b its. The i n t e g r a l c o n tr o l c ir c u it r y a n d
|
OCR Scan
|
bq4024/bq4024Y
128Kx16
40-pin
10-year
bq4024
152-bit
D0037Q0
25X1
bq4024Y
|
PDF
|