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    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


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    BS62LV1600 115mA R0201-BS62LV1600 220uA 100uA 110uA PDF

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small


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    CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI PDF

    AT49BV802A

    Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3405E AT49BV802A AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu PDF

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    W19B320AT/B w19b320 PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


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    PDF

    bga 6x8

    Abstract: bga 6x8 Package A64E06161 A64E06161G
    Text: A64E06161 1M X 16 Bit Low Voltage Super RAMTM Preliminary Features n Common I/O using three-state output n Support 3 distinct operation modes for reducing standby power : Reduced Memory Size Operation 4M,8M,12M,16M Partial Array Refresh (4M,8M,12M) Deep Power Down Mode


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    A64E06161 48-ball A64E06161 I/O10 I/O11 I/O12 I/O14 I/O13 I/O15 A64E06161G bga 6x8 bga 6x8 Package A64E06161G PDF

    TIB0

    Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
    Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


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    K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D TIB0 K9F6408Q0C K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-QCB0 PDF

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


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    D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash PDF

    TE28F640J3C-120

    Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


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    28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead TE28F640J3C-120 TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability PDF

    SST39LF512

    Abstract: SST39LF010 SST39LF020 SST39LF040 SST39VF010 SST39VF020 SST39VF040 SST39VF512
    Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet


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    SST39LF512 SST39LF010 SST39LF020 SST39LF040 SST39VF512 SST39VF010 SST39VF020 SST39VF040 SST39LF/VF512 512Kb SST39LF040 SST39VF040 PDF

    MX23L3213

    Abstract: MX23L3213TC-12 MX23L3213TC-70 MX23L3213TC-90 MX23L3213TI-10 MX23L3213TI-70 MX23L3213TI-90 tsop 48 PIN
    Text: MX23L3213 32M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 4M x 8 byte mode - 2M x 16 (word mode) • Fast access time - Random access:70ns(max.) • Current - Operating:16mA - Standby:5uA • Supply voltage - 2.7V ~ 3.6V • Package - 48 pin TSOP (12mm x 20mm)


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    MX23L3213 32M-BIT D15/A-1 JUN/29/2005 MX23L3213 MX23L3213TC-12 MX23L3213TC-70 MX23L3213TC-90 MX23L3213TI-10 MX23L3213TI-70 MX23L3213TI-90 tsop 48 PIN PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    A29L800

    Abstract: A29L800V
    Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.


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    A29L800 KbyteX15 KwordX15 48TFBGA) A29L800V PDF

    smd transistor HB

    Abstract: LP62S16128B-T
    Text: LP62S16128B-T Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required


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    LP62S16128B-T 44-pin 48-ball MO192 smd transistor HB PDF

    Untitled

    Abstract: No abstract text available
    Text: RENESAS LSIs 2003.08.21 Ver. 7.0 M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's


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    M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD 16-BIT) 262144-words 16-bit, M5M5V416C PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    AS6C1016

    Abstract: sram 64k 64k x 8 sram
    Text: OCTOBER 2007 January 2007 AS6C1016 X 8CMOS BIT LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply


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    AS6C1016 44-pin 48-ball AS6C1016 576-bit OCTOBER/2007, sram 64k 64k x 8 sram PDF

    BGA-48-0608

    Abstract: BH616UV1611
    Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :


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    BH616UV1611 BH616UV1611 55/70ns R0201-BH616UV1611 BGA-48-0608 PDF

    BGA-48-0608

    Abstract: BH616UV8011
    Text: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit BH616UV8011 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V y Ultra low power consumption : Operation current : 12mA Max. at 55ns


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    BH616UV8011 x8/x16 R0201-BH616UV8011 TSOP1-48 BGA-48-0608 BH616UV8011 PDF

    lv8011

    Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
    Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout


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    1265E 01/00/xM lv8011 AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T PDF

    A12C

    Abstract: A14C A15C CY62127V
    Text: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq


    OCR Scan
    CY62127V 44-pin CY62127V A12C A14C A15C PDF

    Untitled

    Abstract: No abstract text available
    Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from


    OCR Scan
    Am29DL800B 8-Bit/512 16-Bit) Am29DL800 FBB048. PDF

    Untitled

    Abstract: No abstract text available
    Text: / A M D il A m 2 9 L V 0 1 7 B 16 Megabit 2 M x 8-Bit CM O S 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • S in g le p o w e r s u p p ly o p e ra tio n ■ Embedded Algorithms — Full voltage range: 2.7 to 3.6 volt read and write


    OCR Scan
    16-038-TSOP-1 TSR040--40-Pin 16-038-TSOP-1 TSR040 Am29LV017B FGC048--48-Ball 16-038-FGC-2 PDF