TIB0
Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA
|
Original
|
PDF
|
K9F6408Q0C
K9F6408U0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
63ball
48ball
K9F6408Q0C-D
K9F6408Q0C-B
K9F6408U0C-D
TIB0
K9F6408Q0C
K9F6408Q0C-B
K9F6408U0C-B
K9F6408U0C-QCB0
|
Untitled
Abstract: No abstract text available
Text: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 1.8V VCC S34MS01G2, S34MS02G2, S34MS04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
PDF
|
S34MS01G2,
S34MS02G2,
S34MS04G2
S34MS01G2
|
K9F1208U0C-PCB
Abstract: No abstract text available
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PCB0000
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
K9F1208U0C-PCB
|
SAMSUNG NAND Flash Qualification Report
Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PIB0T00
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
SAMSUNG NAND Flash Qualification Report
K9F1208U0CJIB0
marking date code samsung semiconductor
|
Untitled
Abstract: No abstract text available
Text: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G2, S34ML02G2, S34ML04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
PDF
|
S34ML01G2,
S34ML02G2,
S34ML04G2
S34ML01G2
|
MT29F4G08ABADAWP
Abstract: Micron MT29F8G08 MT29F8G16 MT29F4G16ABBDAH4 MT29F8G16ADBDAH4 MT29F4G08abada MT29F4G08ABA MT29F4G08ABADAH4 MT29F8G08A MT29F4G08
Text: Micron Confidential and Proprietary 4Gb, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,
|
Original
|
PDF
|
MT29F4G08ABADAH4,
MT29F4G08ABADAWP,
MT29F4G08ABBDAH4,
MT29F4G08ABBDAHC,
MT29F4G16ABADAH4,
MT29F4G16ABADAWP,
MT29F4G16ABBDAH4,
MT29F4G16ABBDAHC,
MT29F8G08ADADAH4,
MT29F8G08ADBDAH4,
MT29F4G08ABADAWP
Micron MT29F8G08
MT29F8G16
MT29F4G16ABBDAH4
MT29F8G16ADBDAH4
MT29F4G08abada
MT29F4G08ABA
MT29F4G08ABADAH4
MT29F8G08A
MT29F4G08
|
KFG2G16Q2A
Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
KFG2G16Q2A-DEBx)
KFH4G16Q2A-DEBx)
KFG2G16Q2A
KFH4G16Q2A
80x11
KFG2G16Q2A)
KFH4G16Q2A)
KFG2G16Q2A
0307h
0719h
63FBGA
KFG2G16
onenand
oneNand flash
|
63FBGA
Abstract: KFG1G16Q2B onenand
Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
KFG1G16Q2B-DEBx)
KFG1G16Q2B
80x11
KFG1G16x2B)
63FBGA
KFG1G16Q2B
onenand
|
K9F2808U0B-YCB0
Abstract: K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808U0B K9F2808U0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-Y
Text: K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808Q0B:Preliminary K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May 28’th 2001
|
Original
|
PDF
|
K9F2808Q0B-DCB0
K9F2808U0B-VCB0
K9F2808Q0B
K9F2808U0B-YCB0
K9F2808U0B-DCB0
K9F2808U0B
K9F2808Q0B
200us
300us
100ns
K9F2808Q0B-D
K9F2808U0B-Y
|
NT5TU256T8DY
Abstract: 128 MB DDR2 SDRAM DDR2-667 DDR2-800 NT5TU256T8DY-3C
Text: NT5TU512T4DY / NT5TU256T8DY 2Gb DDR2 SDRAM DDP Features • Programmable Additive Latency: 0, 1, 2, 3 and 4 CAS Latency and Frequency Speed Sorts DDR2-667 DDR2-800 DDR2-800 (-3C) (-AC) (-AD) Bin • Write Latency = Read Latency -1 Units • Programmable Burst Length: 4 and 8
|
Original
|
PDF
|
NT5TU512T4DY
NT5TU256T8DY
DDR2-667
DDR2-800
DDR2-800
NT5TU256T8DY
128 MB DDR2 SDRAM
NT5TU256T8DY-3C
|
K9F1208B0B
Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.
|
Original
|
PDF
|
K9F1208R0B
K9F1208B0B
K9F1208U0B
K9F1208B0B
K9F1208B0B-G
K9F1208B0B-Y
K9F1208R0B
K9F1208R0B-G
K9F1208U0B
K9F1208U0B-G
K9F1208U0B-V
K9F1208U0B-Y
K9F1208U0BYCB0
|
28F256L30
Abstract: 28F128L30 28F640L30
Text: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0 Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode
|
Original
|
PDF
|
28F640L30,
28F128L30,
28F256L30
50MHz
16K-Word
64K-Word
com/design/flcomp/packdata/298049
28F256L30
28F128L30
28F640L30
|
MX30UF4G26AB
Abstract: MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND
Text: MX30UF2G26 28 AB MX30UF4G26(28)AB 1.8V, 2G/4G-bit NAND Flash Memory MX30UFxG26(28)AB P/N: PM2031 REV. 1.0, MAY 29, 2014 1 MX30UF2G26(28)AB MX30UF4G26(28)AB Contents 1.
|
Original
|
PDF
|
MX30UF2G26
MX30UF4G26
MX30UFxG26
PM2031
MX30UF4G26AB
MX30UF4G28AB
MX30UF2G26AB
MX30UF2G28AB
SLC NAND
|
Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
PDF
|
F0305
|
|
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
|
Original
|
PDF
|
DS05-20892-1E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
|
AM29LV033C-120
Abstract: AM29LV033C-70 AM29LV033C-90 SA10 SA11 L033C AM29LV033C
Text: Am29LV033C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am29LV033C
AM29LV033C-120
AM29LV033C-70
AM29LV033C-90
SA10
SA11
L033C
|
AM29DL640H
Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am75PDL191BHHa/
Am75PDL193BHHa
Am75PDL191BHHa/Am75PDL193BHHa
AM29DL640H
FTE073
PDL127
PDL127H
PDL129
PDL129H
cef3
sa2111
AM29DL640
|
Samsung K9F5608U0D PCB0
Abstract: K9F5608U0D K9F5608U0D-P K9F5608U0D-FCB0 pcb0
Text: K9F5608R0D K9F5608U0D K9F5608D0D FLASH MEMORY K9F5608X0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K9F5608R0D
K9F5608U0D
K9F5608D0D
K9F5608X0D
Samsung K9F5608U0D PCB0
K9F5608U0D-P
K9F5608U0D-FCB0
pcb0
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
|
OCR Scan
|
PDF
|
Am29LV033C
63-ball
40-pin
|
29LV641
Abstract: 29LV640D
Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards
|
OCR Scan
|
PDF
|
Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
TSR048--
16-038-TS48
TSR048
29LV640D
|
L323C
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile
|
OCR Scan
|
PDF
|
Am29DL32xC
16-Bit)
29DL32xC
L323C
|
29LV033C
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
|
OCR Scan
|
PDF
|
Am29LV033C
63-ball
40-pin
29LV033C
|
032XM
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
|
OCR Scan
|
PDF
|
Am29LV033C
63-ball
40-pin
032XM
|
29lv641
Abstract: No abstract text available
Text: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations
|
OCR Scan
|
PDF
|
Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
|