7420 ic details

Abstract: pin diagram ic 7420 UV-EPROM A0-A12, D0-D7 ER410 TI645 EPROM128KX8 pinout 7420 2758 eprom
Contextual Info: mosaic MIXED TECHNOLOGY PUMA PUMA 2 US2500 semiconductor, inc. Issue4.0 : October 1995 2 ,0 9 7 ,1 5 2 bit UVEPROM and 52 4,2 88 bitSRAM Description Features The PUMA 2 U S 25 00 is a Mixed Technology Puma 2 Modu le comprising of 2 x 128K8 UVEPROM 's and 2 x 3 2 K 8 SRAM S. The device

B0580

Contextual Info: W W hite Technology, Inc MEMORY PRODUCTS P R E LIM IN A R Y NIC [ 1 A16 t 2 A15 c 3 A12 c 4 A7 c 5 A6 c 6 A5 [ 7 A4 c 8 A3 A2 A1 A0 c 9 [ 10 [ 11 L 12 i/oo : 13 1/01 I 14 I /0 2 [ 15 Vss [ 16 ^ WE-128K8-150 32 ] Vcc 31 ] WE 30 ] NC 29 ] A14 128K x 8 BIT CMOS EEPROM

Contextual Info: 128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES  Read Access Times of 125, 140, 150, 200, 250, 300ns  Page Write Cycle Time 10ms Max.  JEDEC Approved Packages  Data Polling for End of Write Detection  Hardware and Software Data Protection

WME128K8-XXX

Contextual Info: White Electronic Designs 128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP

marking HZA

Abstract: QML-38534 k8120c WMS128K8-15DJ
Contextual Info: REVISIONS LTR A DESCRIPTION DATE YR-MO-DA APPROVED 98-06-22 K. A. Cottongim Add device type 11. Change limits Iq q and I c C D R I in table I. REV SHEET REV A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 REV A A A A A A A A A A A A A A SHEET

Micron Quantum Devices

Abstract: LF400
Contextual Info: ADVANCE M IC R O N I ” MT28LF400 256K x 16. 512K X 8 FLASH MEMORY 256K x 16 , 512K X 8 3.3V/12V, BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: - 16KB/ 8K-word boot block (protected) - Two 8KB/4K-word parameter blocks - Four general memory blocks

Contextual Info: HHITE /M ICRO ELECTRONICS W 128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101

Contextual Info: 128K8V-XXX HI-RELIABILITY PRODUCT 128Kx8 3.3V MONOLITHIC SRAM PRELIMINARY* FEATURES • Access Times 15, 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ Package 101 *

Contextual Info: m WHITE M I C R O E L E C T R O N I C S W 128K8-XCX 128Kx8 SRAM MODULE, SM D 5962-93156 FEATURES FIG. 1 • PIN CONFIGURATION TOP VIEW NC C 1 A16C 2 ^ Stand ard M icro circuit D raw ing, 5 9 6 2 -9 3 1 5 6 Vcc 32 31 □ A15 A14 C 3 30 □ A12 C 4 29 □ w l

smd A7t

Abstract: smd code A7t
Contextual Info: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, 128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2

Contextual Info: 128K8-XXX WHITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300nS PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300

Contextual Info: a W M 128K8V-XXX M/HITE /MICROELECTRONICS 128Kx8 3.3V MONOLITHIC SRAM PRELIM INARY * FEATURES • A c c e s s T i m e s 15, 17, 2 0, 2 5, 3 5 n s ■ M I L - S T D - 8 8 3 C o m p li a n t D e v ic e s A v a i l a b l e ■ R e v o lu tio n a r y , C e n t e r P o w e r / G r o u n d P in o u t

Contextual Info: 128K8-XXXE W h it e E l e c t r o n ic D e sig n s C o r p o r a t io n 128Kx8 CMOS MONOLITHIC EEPROM ADVANCED* FEATURES FIG. 1 • Access Tim es of 150, 200, 250, 300ns PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 CSOJ • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300

ARINC 629 sim

Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
Contextual Info: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■

smd mark 601 8 pin

Abstract: cmos SRAM 35ns 128k X 8 dip 5962-96691 WMS128K8-XXX
Contextual Info: 128K8-XXX HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES n 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 n Access Times 15, 17, 20, 25, 35, 45, 55ns n MIL-STD-883 Compliant Devices Available n Revolutionary, Center Power/Ground Pinout

Contextual Info: 128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH, SMD 5962-96690 FEATURES  Access Times of 50*, 60, 70, 90, 120, 150ns  Organized as 128Kx8  Packaging  Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ Package 101

T28F200

Contextual Info: ADVANCE MICRON I ,*— , M T2 8 F200 1 2 8 K x 16. 2 5 6 K x 8 FLASH M E M O R Y Trr, T FLASH MEMORY 128K X 16,256K X 8 5V/12V, BOOT BLOCK FEATURES • Five erase blocks: - 16KB/ 8K-word boot block protected - Two 8KB/4K-word parameter blocks - One 96KB/48K-word memory block

ionograph

Abstract: 32256LK KM681001AJ SYS32128LK-020 ANH004 KM641001AJ
Contextual Info: Hybrid Memory Products Ltd SRAM Module Mean Time Between Failure Analysis MTBF Introduction In general terms, the reliability of any plastic module assembly can be assessed by dividing the assembly into 4 critical areas - active devices, passive devices,

Contextual Info: 128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH SMD 5962-96690* FEATURES  Access Times of 50*, 60, 70, 90, 120, 150ns  Organized as 128Kx8  Packaging  Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)

Contextual Info: 128K8V-XXX M/HITE M IC RO ELEC T RO N IC S 128Kx8 3.3V MONOLITHIC SRAM ADVANCED* FEATURES • Access Times 15,17, 20, 25, 35ns MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved Commercial, Industrial and Military Temperature Range

Contextual Info: 128K8-XXX W hite El e c t r o n ic D esigns C o r p o r a t i o n 128Kx8 CMOS MONOLITHIC EEPROM. SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 1 2 0 ,1 4 0 ,1 5 0 , 200, 250, 300ns PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 CSOJ

Contextual Info: □ 128K8-XXX WHITE /M ICROELECTRONICS 128Kx8 M ONOLITHIC SRAM , S M D 5962-96691 pending PRELIMINARY* FEATURES A c c e s s T i m e s 17, 2 0, 2 5, 35, 4 5, 55n S • M I L - S T D - 8 8 3 C o m p l i a n t D e v ic e s A v a i l a b l e ■ R a d ia tio n T o l e r a n t D e v ic e s A v a i l a b l e

Contextual Info: I i 'À II liVHITE M IC RO ELECT RO N ICS 128Kx8 SRAM 128K8-XRJX prelim ina ry * PLASTIC PLUS FEATURES • Access Times 15,17, 20ns PIN C O N F IG U R A T IO N T O P V IE W AOC 1 A 1C 2 A 2C 3 A 3C 4 C SC 5 1/01 C 6 W ■ Standard Commercial Off-The-Shelf COTS Memory

Contextual Info: W h it e E l e c t r o n ic D e s ig n s C o r p o r a t io n 128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 120,140, 150, 200, 250, 300ns PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J