BR17
Abstract: No abstract text available
Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns
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TMS320C6474
SPRS552H
TMS320C6474
C6474)
850-MHz
TMS320C64x+
16-/32-Bit
DDR2-667
BR17
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7813 Texas Instruments Transistor
Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns
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TMS320C6474
SPRS552H
TMS320C6474
C6474)
850-MHz
TMS320C64x
16-/32-Bit
DDR2-667
7813 Texas Instruments Transistor
TMS320C6000
C6000
C6474
C64X
SPRS552H
BR17
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transistor d880
Abstract: BR17
Text: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns
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TMS320C6474
SPRS552E
TMS320C6474
C6474)
850-MHz
TMS320C64x
16-/32-Bit
DDR2-667
transistor d880
BR17
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1933E
Abstract: caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M37280MF
M37280MK
M37280EKSP
1933E
caption
1AB3
25816
bc136
BC154
CR16 mitsubishi
cr64 cr65
VP1160
vp251
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20PIN
Abstract: CXA1787N
Text: CXA1787N 2GHz-band PLL IC for Mobile Communications For the availability of this product, please contact the sales office. Descriptions The CXA1787N is a frequency synthesizer PLL IC developed for use in mobile communication systems. This IC has low current consumption, small package
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CXA1787N
CXA1787N
20-pin
20PIN
SSOP-20P-L01
SSOP020-P-0044
42/COPPER
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
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PDF
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1029F
Abstract: D45 data sheet IR LFN utopia gsu 104 10D9C ABB ACS 800 10D10 diode lc1 d18 bl 10D3F 10DB8
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MSC8101 Programmer’s Quick Reference 16-Bit Digital Signal Processor MSC8101PG/D Revision 0, December 2000 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.
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MSC8101
16-Bit
MSC8101PG/D
1029F
D45 data sheet
IR LFN
utopia gsu 104
10D9C
ABB ACS 800
10D10 diode
lc1 d18 bl
10D3F
10DB8
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PDF
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Spansion S29GL512N11
Abstract: No abstract text available
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
S29GLxxxN
27631sb2
Spansion S29GL512N11
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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FAA064
Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29GL-N
S29GL256N,
S29GL128N
S29GL-N
FAA064
SPANSION S29GL128
S29GL128
S29GL-P
GL128N
GL256N
S29GL128N
S29GL256N
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120R
Abstract: C8800
Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV2562M
120R
C8800
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1037h
Abstract: 1250H 1488h MX12 MX23 PM5365
Text: PM5365 TEMAP STANDARD PRODUCT DATASHEET PMC-1991148 ISSUE 3 HIGH DENSITY VT/TU MAPPER AND M13 MULTIPLEXER PM5365 TEMAP VT/TU MAPPER AND M13 MULTIPLEXER DATA SHEET PROPRIETARY AND CONFIDENTIAL RELEASED ISSUE 3: SEPTEMBER 2001 Proprietary and Confidential to PMC-Sierra, Inc. and for its Customers’ Internal Use
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PM5365
PMC-1991148
PM5365
1037h
1250H
1488h
MX12
MX23
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l256mh113
Abstract: L256ML123R
Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV256M
l256mh113
L256ML123R
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Untitled
Abstract: No abstract text available
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
S29GL128P,
S29GL256P,
S29GL512P
S29GL128N,
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L256MH113R
Abstract: L256ML113R
Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29LV256M
L256MH113R
L256ML113R
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a22t
Abstract: S19G S29GL-N
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
a22t
S19G
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PDF
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S29GL-N
Abstract: 1E300
Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
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S29GL512/256/128N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
1E300
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transistor D880 circuit diagram application
Abstract: GP-07 BR17
Text: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns
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Original
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TMS320C6474
SPRS552H
TMS320C6474
C6474)
850-MHz
TMS320C64x
16-/32-Bit
DDR2-667
transistor D880 circuit diagram application
GP-07
BR17
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PDF
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s29gl032m10tair
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
BGA-80P-M02
s29gl032m10tair
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PDF
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24C024
Abstract: WB1510 298029 RD237
Text: Intel WB1510 SDH/SONET 2 x STM-4/STS-12 or STM-1/STS-3 Framer Datasheet Order Number: 274042-003 October 2004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS
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WB1510
STM-4/STS-12
5/99-064R2,
5/99-066R1,
5/00-126R2,
5/00-129R1,
24C024
WB1510
298029
RD237
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PDF
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MQ1129
Abstract: MD-1129 MD1123 MD1129 MD1129F MD1130 MD1130F
Text: MDI 129 s'ucon MDI 129F MQ1129 MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation ap plications. • Excellent Temperature Tracking — MD1129.F
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MD1129
MD1129F
MQ1129
MD1129
10/iAdc
MD1129,
MD1129F)
100MAdc,
MQ1129
MD-1129
MD1123
MD1130
MD1130F
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MAI11
Abstract: No abstract text available
Text: C L O C K E D B I D I R E C T I O N A L FIRST-1 SN74ABT361 2 64 x 3 6 x 2 FIRST-OUT M EM O R Y S C B S 129F-JU LY 1 9 9 2 - REVISED FEBRUARY 1996 F r e e - R u n n i n g C L K A and C L K B Can Be A s y n c h r o n o u s or C o i n c i d e n t EFB, F FB, A E B , and AFB Fl ags
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SN74ABT361
129F-JU
MAI11
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PDF
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BA6126
Abstract: shotkey diode application BA6129F csb 455 c BA6162 BA6162F BAB129F transistor BA RW sram memory cards shotkey
Text: JïlS T ô ea'm 000^136 ^ - 1 > - - - ' I - 455 * R H n BA6 129F BA 6 1 6 2/ F V O L T A G E M O N I T O R ICs Dimension • Description T h e B A 6 1 2 9 F a n d t h e B A 6 1 6 2 / F a r e v o l t a g e m o n i t o r i n g ICs. T h e a p p l i c a t i o n of t h e s e I C s is t o m o n i t o r v o l t a g e a p p l i e d t o a l o a d
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BA6129F
BA616
BA6162/F
BA6126
shotkey diode application
csb 455 c
BA6162
BA6162F
BAB129F
transistor BA RW
sram memory cards
shotkey
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PDF
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TA31076S
Abstract: TA31076F ta31076 RKM34EW-1201 kss 1201 rkm34
Text: TONE RINGER ICs TONE RINGER FOR TELEPHONE SET FEATURES • The Tone Ringer with a built-in Ring Detector. It supplies about 5V DC voltage while tone ring outputs so it is convenient to count the call. • Since operating voltage is high, output sound pressure
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OCR Scan
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TA31076S
SSOP1Q-P-225
TA31076F
TA31076S/F-1
TA31076S/F-6
RKM34EW-1201
TA31076S/F-7
500fl
PKM34EW-1201
TA31076S
TA31076F
ta31076
kss 1201
rkm34
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PDF
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