BA6129F
Abstract: No abstract text available
Text: BA6129F/BA6162/BA6162F / < y f - l j —/< "J è l - t "J HC Reset 1C with Battery Backup Function B A 6 1 2 9 F B A 6 1 6 2 B A 6 1 6 2 F [2 /Dimensions Unit : mm) BA6129F, B A 6 1 6 2 /F liS R A M ^ -fi U- '\* v 5 T y S tS ffl <7V\' "j t è ' J - b y I- ICT'To
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BA6129F/BA6162/BA6162F
BA6129F,
BA6129F/
BA6162/BA6162F
BA6129F
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BA6296FP
Abstract: BA843 BA5412 A684A BA658 6439P BA6439S BA6414FS BA7792LS BA6462FP
Text: S i “ J I S / P a r t N u m b e r L ist / W 7 " ' j "j K i c c o o - r i i , f f lit s ijiiK c o ^ T ir s - S H f t C L i Lfco m t - r - r xm\c • B W tffllC b&-§- m 0 * {¡m (nm-ini) 0 ^ - 9 K ^ -fA ( i) (;J l/V ) • J J lf f l/ V i'J I C £ i i , Z(7)BDai - K « ( i , T - ' - i ' 7 ' ' y i ' l - i l * ! c L / : ^ nnn
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BA681A.
A682A.
BA682AF.
BA683A.
A684A.
BA689
BP50M12
BP51L05
BP51L12
BP3008
BA6296FP
BA843
BA5412
A684A
BA658
6439P
BA6439S
BA6414FS
BA7792LS
BA6462FP
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BA6126
Abstract: shotkey diode application BA6129F csb 455 c BA6162 BA6162F BAB129F transistor BA RW sram memory cards shotkey
Text: JïlS T ô ea'm 000^136 ^ - 1 > - - - ' I - 455 * R H n BA6 129F BA 6 1 6 2/ F V O L T A G E M O N I T O R ICs Dimension • Description T h e B A 6 1 2 9 F a n d t h e B A 6 1 6 2 / F a r e v o l t a g e m o n i t o r i n g ICs. T h e a p p l i c a t i o n of t h e s e I C s is t o m o n i t o r v o l t a g e a p p l i e d t o a l o a d
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BA6129F
BA616
BA6162/F
BA6126
shotkey diode application
csb 455 c
BA6162
BA6162F
BAB129F
transistor BA RW
sram memory cards
shotkey
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BR6265AF-10SL
Abstract: BR6265A-10LL BR6265A 128x16
Text: rahm EEPROM Operating voltage Organization Word X Bit Part No. (Bit) Cuient conamptonWa) Power Active Stand-by Write cycle time(Max) supply(V) Read(V) Write(V) (mA) <*A) 2 1 .8-4.0 1.8—4.0 2 1 25 2V 64X16 3 2 .0 -5 .5 2.7— 5.5 2 3 25 3V 5 2.0— 5.5
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64X16
128X16
256X16
BR93LL46F
BR93LC46/F
BR93LC46A/AF
BR93LL56/F
BR93LC56/F
BR93LC56A/AF
BR6265AF-10SL
BR6265A-10LL
BR6265A
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ba3920
Abstract: BA6490FS 6435S BA1335 BA7026L BA6479AFP-Y BA3930 7274S BA 3928 BU9251S
Text: p°n % - n m S i S S / P a r t N um ber List C 5 -a -# [- L i L f c , • i —7 - f i l IC • W tfflIC n • £ * « $ £ ic ita #&•§■ (Tt- (Bfc) • a ft) (S ) • i- ? tm , ( i) z<ns,% -m m t, r - f y - y f i z i m i t z ± m s , £ - J t 3 t l - L i . Lt zo i t z , * * C Ì f « Ì L T A S S A I J i l
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BA681A.
BA682A.
BA682AF.
BA683A.
BA684A.
BP50M12
BP51L05
BP51L12
BP3008
BP3009
ba3920
BA6490FS
6435S
BA1335
BA7026L
BA6479AFP-Y
BA3930
7274S
BA 3928
BU9251S
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BA6129F
Abstract: BR24C01
Text: Introduction Memory IC electrical characteristics summary 1k 64 X 16 BR93LC46A/AF BR93LC56/F BR93LC56/AF BR93LC66/RF BR93LC66A/ARF 3 5 2.0 ~ 5.5 4.5 ~ 5.5 2 BR93LL46F BR93LC46/F Stand Write Active Read by mA (V) (V) (HA) 2 1 1.8 ~ 4.0 1.8 - 4.0 2 3 2.0 - 5,5 2.7 - 5.5
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BR93LL46F
BR93LC46/F
BR93LC46A/AF
BR93LC56/F
BR93LC56/AF
BR93LC66/RF
BR93LC66A/ARF
SK-DIP24
DIP28
OP-W28
BA6129F
BR24C01
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BR93LC46A
Abstract: BR9021B
Text: 7 f l 2 í m tí 0 0 0 7 3 0 0 M□ Lf WDHffl RHri EEPROM •Serial 3-wire Operating voltage Capacity Bit Power Organization (Word X Bit) Part No. supply (V) Read(V) Write(V) Curent consunption(Max) Write cycle Active Stand-by time(Max) <mA) Operating temp Rewritability
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64x16
128X16
256X16
BR93LL46/F
BR93LC46/F
BR93LC46A/AF
BR93LC56/F
BR93LC56A/AF
BR93LC66/RF
BR93LC66A/ARF
BR93LC46A
BR9021B
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BA6126
Abstract: No abstract text available
Text: □□□'1136 455 • RHM B A 6 1 2 9 F B A 6 1 6 2 / F V O L T A G E M O N I T O R ICs Dimension • Description T h e B A 6 1 2 9 F and the B A 6 1 6 2 / F are vol t a g e m o n i t o r i n g ICs. The a p p l i c a t i o n of these ICs is to m o n i t o r volt a g e a p p l i e d to a load
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