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    HUBER+SUHNER RFoF1 - 2GHz LN (RX)

    HUBER+SUHNER Receiver, 2 GHz, DIN Rail, 1 RF OUT, 1 FO IN
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    Mouser Electronics RFoF1 - 2GHz LN (RX)
    • 1 $2356.44
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    HUBER+SUHNER RFoF1 - 2GHz LN 1310 (TX)

    HUBER+SUHNER Transmitter, 2 GHz, 1310nm, DIN Rail, 1 RF IN, 1 FO Out
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RFoF1 - 2GHz LN 1310 (TX)
    • 1 $3919.72
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    • 100 $3919.72
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    HUBER+SUHNER RFoF1 - 2GHz LN 1550 (TX)

    HUBER+SUHNER Transmitter, 2 GHz, 1550nm, DIN Rail, 1 RF IN, 1 FO Out
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RFoF1 - 2GHz LN 1550 (TX)
    • 1 $3948.45
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    • 100 $3948.45
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    Murata Manufacturing Co Ltd LQG15WH1N4B02D

    RF Inductors - SMD 1.4NH +- 0.1NH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI LQG15WH1N4B02D Reel 70,000 10,000
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    Murata Manufacturing Co Ltd LQW15AN3N3D10D

    RF Inductors - SMD 3.3 NH +-.5NH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI LQW15AN3N3D10D Reel 30,000 10,000
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    12GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NBB-302 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers


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    PDF NBB-302 12GHz NBB-302 14GHz 15GHz 20GHz

    DC12G

    Abstract: No abstract text available
    Text: Elite CS-47 High Power Transfer DC-12GHz Failsafe The Type CS-47 is a long life, high performance transfer or crossover switch designed for use in 50 Ohms coaxial transmission lines. The switch is available with either failsafe or latching type actuation operating from a variaty of voltage


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    PDF CS-47 DC-12GHz CS-47 11GHz) 28Vdc 15Vdc DC12G

    Untitled

    Abstract: No abstract text available
    Text: Commercial CCS-47 High Power Transfer DC-12GHz Failsafe The Type CCS-47 is a long life, high performance transfer or crossover switch designed for use in 50 Ohms coaxial transmission lines. The switch is available with either failsafe or latching type actuation operating from a variaty of voltage supplies.


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    PDF DC-12GHz CCS-47 CCS-47 11GHz MIL-STD-202 No0/2007

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    Abstract: No abstract text available
    Text: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM


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    PDF NBB-310 12GHz NBB-310

    EPA025A-70

    Abstract: 0466 1.5 micron
    Text: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz


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    PDF EPA025A-70 70mil 18GHz 12GHz Rn/50 EPA025A-70 0466 1.5 micron

    EFC060B

    Abstract: No abstract text available
    Text: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


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    PDF EFC060B 12GHz 18GHz EFC060B

    EFA040A-70

    Abstract: PT 1132
    Text: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


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    PDF EFA040A-70 70mil 12GHz 18GHz EFA040A-70 PT 1132

    EFA080A-70

    Abstract: No abstract text available
    Text: Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


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    PDF EFA080A-70 70mil 12GHz 18GHz EFA080A-70

    Untitled

    Abstract: No abstract text available
    Text: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM


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    PDF NBB-302 12GHz NBB-302 10GHz 14GHz 15GHz 20GHz

    Untitled

    Abstract: No abstract text available
    Text: Commercial CCS-32 High Power DC-12GHz SPDT Switch Failsafe The CCS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating


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    PDF CCS-32 DC-12GHz CCS-32 28Vdc 15Vdc 12Vdc

    Untitled

    Abstract: No abstract text available
    Text: Elite CS-32 High Power DC-12GHz SPDT Switch Failsafe The CS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating


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    PDF CS-32 DC-12GHz CS-32 -12GHz 28Vdc 15Vdc 12Vdc

    Coaxial Switches

    Abstract: CCR-39S
    Text: Series CCR-39S COAX SWITCHES Multi-Throw DC-12 GHz, SP7T & SP8T Latching Coaxial Switch PART NUMBER DESCRIPTION CCR-39S Commercial Latching Multi-throw, DC-12GHz The CCR-39S is a broadband, multi-throw, electromechanical coaxial switch designed to switch a


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    PDF CCR-39S DC-12 DC-12GHz CCR-39S allows-39SX70-MS CCR-39SX80-DS CCR-39SX70-R CCR-39SX80-M Coaxial Switches

    eudyna GaAs FET RF Transistor

    Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


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    PDF FHX45X 12GHz FHX45X 2-18GHz eudyna GaAs FET RF Transistor high frequency transistor ga as fet transistor on 4959 eudyna fet

    eudyna GaAs FET RF Transistor

    Abstract: No abstract text available
    Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


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    PDF FHX13X, FHX14X 12GHz FHX13) 12GHz FHX14X 2-18GHz eudyna GaAs FET RF Transistor

    EFC240B

    Abstract: No abstract text available
    Text: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


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    PDF EFC240B 12GHz 18GHz EFC240B

    FHX04X

    Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


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    PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04X FHX04 FHX05X GaAs FET HEMT Chips hemt low noise die

    1-8GHz pass band

    Abstract: No abstract text available
    Text: JXWBLB-T-BP-12000-2000-9CSMF 12GHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-12000-2000-9CSMF 1 JXWBLB-T-BP-12000-2000-9CSMF 12GHz Cavity Band Pass Filter Technical Specification Center Frequency[f0] GHz 12 1dB Bandwidth(GHz)


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    PDF JXWBLB-T-BP-12000-2000-9CSMF 12GHz VSWR/50Ohms 16-18GHz T-BP-12000-2000-9CSMF 1-8GHz pass band

    Untitled

    Abstract: No abstract text available
    Text: Elite CS-32 High Power DC-12GHz SPDT Switch Failsafe The CS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating


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    PDF DC-12GHz CS-32 CS-32 28Vdc 15Vdc 12Vdc

    Untitled

    Abstract: No abstract text available
    Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant


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    PDF MLK0603 12GHz 300min. 160min. 200min. mlk0603

    Untitled

    Abstract: No abstract text available
    Text: 1/3 SMD Inductors(Coils) For High Frequency(Multilayer) Conformity to RoHS Directive MLK Series MLK0603 FEATURES • Supports operating frequency bands of up to 12GHz with nominal inductance values from 1 to 33nH. • The gigaspiral multilayer structure reduces self-resonant


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    PDF MLK0603 12GHz mlk0603

    Untitled

    Abstract: No abstract text available
    Text: Elite CS-32 High Power DC-12GHz SPDT Switch Latching The CS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating


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    PDF DC-12GHz CS-32 CS-32 MIL-STD-202 28Vdc 15Vdc 12Vdc

    Untitled

    Abstract: No abstract text available
    Text: Commercial CCS-32 High Power DC-12GHz SPDT Switch Failsafe The CCS-32 is a broadband, SPDT Switch designed to switch microwave signals from a common input to either of two outputs. Designed for 50 Ohms transmission lines. The switch is available with either failsafe or latching type actuators operating


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    PDF DC-12GHz CCS-32 CCS-32 MIL-STD-202 28Vdc 15Vdc 12Vdc

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2497 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 1.2dB f=12GHz • High Gain Unit in mm 2.16 ± 0.2 1.1 1.1 : Ga = 10dB (f=12GHz)


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    PDF 2SK2497 12GHz)

    LTA 703 S

    Abstract: amplifier shf
    Text: GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR 2SK2331 U nit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain : Ga = lld B (f= 12GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SK2331 12GHz) LTA 703 S amplifier shf