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    EFC060B Search Results

    EFC060B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EFC060B Excelics Semiconductor 10-14V low distortion GaAs power FET Original PDF
    EFC060B-100F Excelics Semiconductor Low Distortion GaAs Power FET Original PDF

    EFC060B Datasheets Context Search

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    EFC060B

    Abstract: No abstract text available
    Text: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		PDF EFC060B 12GHz 18GHz EFC060B

    EFC060B

    Abstract: SG95
    Text: EFC060B Low Distortion GaAs Power FET FEATURES 350 • • • • • • • 50 +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		PDF EFC060B 12GHz EFC060B SG95

    EFC060B-100F

    Abstract: 130gm
    Text: Excelics EFC060B-100F DATA SHEET Low Distortion GaAs Power FET • • • • • • • HERMETIC 100mil CERAMIC FLANGE PACKAGE +25.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM”


    Original     		PDF EFC060B-100F 100mil 12GHz EFC060B-100F 130gm

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF