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    12N06 Search Results

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    12N06 Price and Stock

    Infineon Technologies AG BSC012N06NSATMA1

    MOSFET N-CH 60V 100A TSON-8
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    DigiKey BSC012N06NSATMA1 Reel 10,000 5,000
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    Avnet Americas BSC012N06NSATMA1 Ammo Pack 16 Weeks, 3 Days 1
    • 1 $3.38
    • 10 $2.84
    • 100 $2.06
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    BSC012N06NSATMA1 Reel 18 Weeks 5,000
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    Mouser Electronics BSC012N06NSATMA1 4,842
    • 1 $3.25
    • 10 $2.73
    • 100 $1.96
    • 1000 $1.52
    • 10000 $1.51
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    Newark BSC012N06NSATMA1 Cut Tape 24,535 1
    • 1 $1.55
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    • 100 $1.55
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    Chip1Stop BSC012N06NSATMA1 Cut Tape 4,748
    • 1 $3.12
    • 10 $2.32
    • 100 $1.69
    • 1000 $1.32
    • 10000 $1.28
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    EBV Elektronik BSC012N06NSATMA1 19 Weeks 5,000
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    Win Source Electronics BSC012N06NSATMA1 4,400
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    • 100 $2.6216
    • 1000 $2.5167
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    Infineon Technologies AG BSC112N06LDATMA1

    MOSFET 2N-CH 60V 20A 8TDSON
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    DigiKey BSC112N06LDATMA1 Digi-Reel 5,045 1
    • 1 $1.75
    • 10 $1.188
    • 100 $1.75
    • 1000 $0.63433
    • 10000 $0.59141
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    Avnet Americas BSC112N06LDATMA1 Reel 125,000 8 Weeks 5,000
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    Mouser Electronics BSC112N06LDATMA1 4,808
    • 1 $1.55
    • 10 $1.19
    • 100 $0.841
    • 1000 $0.593
    • 10000 $0.572
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    Newark BSC112N06LDATMA1 Cut Tape 7,553 1
    • 1 $1.41
    • 10 $1.41
    • 100 $0.93
    • 1000 $0.571
    • 10000 $0.499
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    Rochester Electronics BSC112N06LDATMA1 1
    • 1 $0.6845
    • 10 $0.6845
    • 100 $0.6434
    • 1000 $0.5818
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    Chip1Stop BSC112N06LDATMA1 Cut Tape 2,756
    • 1 $1.61
    • 10 $1.09
    • 100 $0.772
    • 1000 $0.633
    • 10000 $0.631
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    EBV Elektronik BSC112N06LDATMA1 9 Weeks 5,000
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    Micro Commercial Components MCAC012N06H-TP

    MOSFET N-CH 60 60A DFN5060
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCAC012N06H-TP Digi-Reel 4,900 1
    • 1 $0.88
    • 10 $0.547
    • 100 $0.3562
    • 1000 $0.25015
    • 10000 $0.22283
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    MCAC012N06H-TP Cut Tape 4,900 1
    • 1 $0.88
    • 10 $0.547
    • 100 $0.3562
    • 1000 $0.25015
    • 10000 $0.22283
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    onsemi RFD12N06RLESM9A

    MOSFET N-CH 60V 18A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD12N06RLESM9A Digi-Reel 3,999 1
    • 1 $1.25
    • 10 $0.842
    • 100 $1.25
    • 1000 $0.43652
    • 10000 $0.43652
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    RFD12N06RLESM9A Cut Tape 3,999 1
    • 1 $1.25
    • 10 $0.842
    • 100 $1.25
    • 1000 $0.43652
    • 10000 $0.43652
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    RFD12N06RLESM9A Reel 2,500 2,500
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    • 10000 $0.39225
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    Avnet Americas RFD12N06RLESM9A Reel 2,500
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    • 10000 $0.35067
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    RFD12N06RLESM9A Reel 16 Weeks 2,500
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    Mouser Electronics RFD12N06RLESM9A 14,313
    • 1 $1.08
    • 10 $0.765
    • 100 $0.569
    • 1000 $0.424
    • 10000 $0.392
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    Newark RFD12N06RLESM9A Cut Tape 4,306 5
    • 1 $1.06
    • 10 $0.837
    • 100 $0.658
    • 1000 $0.568
    • 10000 $0.568
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    RFD12N06RLESM9A Reel 2,500
    • 1 $0.54
    • 10 $0.54
    • 100 $0.54
    • 1000 $0.54
    • 10000 $0.471
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    TME RFD12N06RLESM9A 1,482 1
    • 1 $0.953
    • 10 $0.779
    • 100 $0.621
    • 1000 $0.527
    • 10000 $0.527
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    Richardson RFPD RFD12N06RLESM9A 2,500
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    • 10000 $0.39
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    Avnet Asia RFD12N06RLESM9A 16 Weeks 2,500
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    Avnet Silica RFD12N06RLESM9A 17 Weeks 2,500
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    EBV Elektronik RFD12N06RLESM9A 18 Weeks 2,500
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    New Advantage Corporation RFD12N06RLESM9A 10,000 1
    • 1 -
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    • 10000 $0.5
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    Infineon Technologies AG IPTC012N06NM5ATMA1

    TRENCH 40<-<100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPTC012N06NM5ATMA1 Cut Tape 1,707 1
    • 1 $4.96
    • 10 $3.468
    • 100 $4.96
    • 1000 $2.34762
    • 10000 $2.34762
    		Buy Now
    IPTC012N06NM5ATMA1 Digi-Reel 1,707 1
    • 1 $4.96
    • 10 $3.468
    • 100 $4.96
    • 1000 $2.34762
    • 10000 $2.34762
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    Avnet Americas IPTC012N06NM5ATMA1 Reel 1,800 18 Weeks 1,800
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    • 10000 $2.34763
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    Mouser Electronics IPTC012N06NM5ATMA1 241
    • 1 $4.96
    • 10 $3.47
    • 100 $2.59
    • 1000 $2.35
    • 10000 $2.34
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    EBV Elektronik IPTC012N06NM5ATMA1 19 Weeks 1,800
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    Find more 12N06 price and stock on Findchips.com

    12N06 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12N06RLE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N06RLE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N06RLESM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N06RLESM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    12N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N06Z Power MOSFET 12A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 12N06Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low


    Original     		PDF 12N06Z 12N06Z O-252 12N06ZL-TN3-R 12N06ZG-TN3-R QW-R502-767

    12N06L

    Abstract: 12n06
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N06 Preliminary Power MOSFET 12 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 12N06 is an N-channel mode Power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance with extremely high dense cell design, rugged


    Original     		PDF 12N06 UT12N06 O-252 12N06L-TN3-R 12N06G-TN3-R O-252 QW-R502-561 12N06L 12n06

    Untitled

    Abstract: No abstract text available
    Text: Green Product SDP F 12N06 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 12A 0.61 @ VGS=10V Rugged and reliable.


    Original     		PDF 12N06 O-220 O-220F O-220F O-220 SDP12N06 SDF12N06

    12N6LE

    Abstract: 12n06rle 630E1
    Text: 12N06RLE, 12N06RLESM, 12N06RLE Data Sheet October 1999 File Number 2407.5 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title FD1 06R , D12 6RL M, P12 6RL bt A, V, 71 m, Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN


    Original     		PDF RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE O-251AA O-252AA RFD12N06RLE RFD12N06RLESM 12N6LE 12n06rle 630E1

    12N6LE

    Abstract: 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06
    Text: [ /Title RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- 12N06RLE, 12N06RLESM, 12N06RLE Data Sheet


    Original     		PDF 2N06R RFD12 N06RL RFP12 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE 12N6LE 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06

    12N6LE

    Abstract: 12n06rle 12N6L AN9321 AN9322 RFD12N06RLE RFD12N06RLESM RFD12N06RLESM9A RFP12N06RLE TB334
    Text: 12N06RLE, 12N06RLESM, 12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN FLANGE DRAIN (FLANGE) GATE SOURCE 12N06RLE 12N06RLESM


    Original     		PDF RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE O-251AA O-252AA RFD12N06RLE RFD12N06RLESM O-220AB 12N6LE 12n06rle 12N6L AN9321 AN9322 RFD12N06RLE RFD12N06RLESM RFD12N06RLESM9A RFP12N06RLE TB334

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    12n06

    Abstract: No abstract text available
    Text: ¿ 5 S G S -T H O M S O N ¡m e ra « 7 S T D 12N05 S T D 12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STD12N05 50 V 12N06 60 V R DS on Id a < 0.15 a 12 A < 0.15 12 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF 12N05 12N06 STD12N05 STD12N06 O-251) O-252) O-251 O-252 STD12N05/STD12N06 12n06

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S VBO 40 Single Phase Rectifier Bridge •dAV V RRM — 40 A 800-1600 V Prelim inary Data V RSM V 900 1300 1700 Symbol V RRM Standard V 800 1200 1600 VBO 40-08N06 VBO 40-12N06 VBO 40-1 6 NO 6 ■ Test Conditions diode (module) UsM TVJ = 45°C; VR= 0


    OCR Scan     		PDF 40-08N06 40-12N06

    2N06L

    Abstract: 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos 12N05L
    Text: *57 S G S -T H O M S O N ilLHCTIIMDe TYPE 2Nosl 12N06L s t d i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR R DS on Id S T D 12N05L V 50 V < 0.15 a 12 A S T D 12N06L 60 V < 0.15 £2 12 A dss • T Y P IC A L R DS(on) = 0.115 £1


    OCR Scan     		PDF STD12N06L 12N05L 12N06L 2N06L 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    12N06EZL

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 12N 06E ZL TMOS E-FET™ High Energy Power FET DPAK for Surface Mount or Insertion Mount TMOS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate If This a d va n ce d T M O S p o w e r F E T is d e sig n e d to w ithstan d high


    OCR Scan     		PDF 06EZL 12N06EZL

    C322 diode

    Abstract: 12n05 p12n05 SEFM12H05
    Text: S G S-T H O n S O N 07E D 73C 17 598 712^237 D O lfllD l V N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors, ABSOLUTE M AXIM U M RATINGS


    OCR Scan     		PDF SEFM12NQ5 SEFM12N06 SEFP12N05 SEFP12N06 0V/60V 12N05 12N06 300jus, C322 diode p12n05 SEFM12H05

    RFD3055RLE

    Abstract: 12n06 d0420 RFP3055RLE RFD3055RLESM RFP12N06RLE RFD12N06RLE RFD12N06RLESM 12N06RLE
    Text: R F D 12N 06R LE , R FD 12N 06R LE S M R F P 12N 06R L E , R F D 3055R L E SE CT OR R FD 3055R LE S M , R F P 3055R L E u a o d i q n M r c r o ° HA RR IS S E M I C O N D May 1992 Features N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs


    OCR Scan     		PDF RFD12N06RLE, RFD12N06RLESM RFP12N06RLE, RFD3055RLE RFD3055RLESM, RFP3055RLE 135ii 12N06) RFD12N06RLESM, RFD3055RLE 12n06 d0420 RFP3055RLE RFD3055RLESM RFP12N06RLE RFD12N06RLE RFD12N06RLESM 12N06RLE

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    12N6LE

    Abstract: 12N06RLE 12N06RLESM
    Text: in te g ri I 12N06RLE, 12N06RLESM, 12N06RLE D a ta S h e e t O c to b e r 1999 2407.5 U ltraS ^ 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging F ile N u m b e r Features JE D EC 7 0 -2 5 1 A A JE D E C TO -252AA SOURCE


    OCR Scan     		PDF RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE -252AA RFD12N -220A O-251AA AN7260. 12N6LE 12N06RLE 12N06RLESM

    gto Gate Drive circuit

    Abstract: TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06
    Text: EB108 Prepared by Al Pshaenich Power Products Applications RELATIVE EFFICIEN CIES OF MOTOROLA POWER SEMICONDUCTORS IN A PWM DC MOTOR CONTROLLER INTRODUCTION The prime requisite of a power switch, semiconductor or otherwise, is to transfer the maximum power to the


    OCR Scan     		PDF EB108 EB108/D gto Gate Drive circuit TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06