Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION B2 DATE REVISED PER ECR-12-009561 DWN APVD AY 12AUG13 SZ D D 7.85 7.85 7.85 2 PLC C C 7.85 2 PLC 1.25 2 PLC 1.25 2 PLC 24.51
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Original
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ECR-12-009561
12AUG13
12NOV01
25JAN02
UL94VO.
15/30/45A
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PDF
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Untitled
Abstract: No abstract text available
Text: SMM2348ES www.vishay.com Vishay Siliconix Medical N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 30 RDS(on) () at VGS = 10 V 0.024 RDS(on) () at VGS = 4.5 V 0.032 ID (A)
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Original
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SMM2348ES
O-236
OT-23)
SMM2348ES*
OT-23
SMM2348ES-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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MKT468
Abstract: No abstract text available
Text: Preliminary MKT467, MKT468, MKT469 Vishay BCcomponents DC Film Capacitors MKT Radial Lacquered Type 467 l FEATURES w • AEC-Q200 qualified Available taped and loose in box Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
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Original
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MKT467,
MKT468,
MKT469
AEC-Q200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
MKT468
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQ2325ES www.vishay.com Vishay Siliconix P-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SQ2325ES
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7308DN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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Si7308DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiE818DF www.vishay.com Vishay Siliconix N-Channel 75 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiE818DF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2356DS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. ID (A)a 0.051 at VGS = 10 V 4.3 0.054 at VGS = 4.5 V 4.1 0.070 at VGS = 2.5 V 3.6 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization:
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Original
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Si2356DS
O-236
OT-23)
Si2356DS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin
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Original
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UL94-V0
2002/95/EC
30Vac
100Vac/min
01-APR-14
12-AUG-13
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin
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Original
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UL94-V0
2002/95/EC
30Vac
100Vac/min
09-NOV-11
21-SEP-11
10-MAY-11
04-AUG-10
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PDF
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Untitled
Abstract: No abstract text available
Text: NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICROINCHES : BODY ASSEMBLY - BRASS, GOLD PLATING (50 MIN THICK) CAP - BRASS, GOLD PLATING (50 MIN THICK) LOOSE CONTACT - BeCu, GOLD PLATING (50 MIN THICK) & ASSEMBLED CONTACT GASKET - SILICONE RUBBER
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Original
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M39012/56-4502
12-Aug-13
09-Jul-80
RG-400/U
142/U
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PDF
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Untitled
Abstract: No abstract text available
Text: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Original
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SiS990DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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VJ Non-Magnetic Series for IR Reflow Soldering
Abstract: No abstract text available
Text: VJ Non-Magnetic Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors for Non-Magnetic Applications FEATURES • • • • • • • • Manufactured with non-magnetic materials Safety screened for magnetic properties C0G NP0 and X7R/X5R dielectrics
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Original
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VJ Non-Magnetic Series for IR Reflow Soldering
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PDF
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Untitled
Abstract: No abstract text available
Text: SiRA66DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0023 at VGS = 10 V 50 0.0031 at VGS = 4.5 V 50 Qg (Typ.) 19.2 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 S 6.15 mm
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Original
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SiRA66DP
SiRA66DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin
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Original
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UL94-V0
2002/95/EC
30Vac
100Vac/min
|
PDF
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|
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Untitled
Abstract: No abstract text available
Text: Si7315DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () Max. ID (A)e 0.315 at VGS = - 10 V - 8.9 0.350 at VGS = - 6 V - 8.7 Qg (Typ.) 15.4 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Original
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Si7315DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Original
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SiS990DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR882ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SUM90N04-3m3P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHOR BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin
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Original
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UL94-V0
2002/95/EC
30Vac
100Vac/min
09-NOV-11
21-SEP-11
10-MAY-11
04-AUG-10
|
PDF
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Untitled
Abstract: No abstract text available
Text: SiR472ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a,g RDS(on) () Max. 30 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (Typ.) 9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • S 3
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Original
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SiR472ADP
SiR472ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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IEC 384-14 II 55 100 56 x 2
Abstract: F1772-3 300 V-X2
Text: F1772-2 310 V-X2 www.vishay.com Vishay Roederstein Interference Suppression Film Capacitors MKT Radial Potted Type FEATURES • • • • 15 mm to 37.5 mm lead pitch AEC-Q200 qualified for C 470 nF Supplied loose in box, taped on reel Material categorization:
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Original
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F1772-2
AEC-Q200
40/110/56/C
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IEC 384-14 II 55 100 56 x 2
F1772-3 300 V-X2
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin
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Original
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UL94-V0
2002/95/EC
30Vac
100Vac/min
12-AUG-13
19-JUL-13
04-NOV-11
21-SEP-11
10-MAY-11
30-SEP-10
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 15.48 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE Nickel CONTACT AREA Pd-Ni + Gold SOLDER TAIL AREA Matt Tin SHIELDING: BRASS MATT TIN PLATED
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Original
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UL94-V0
2002/95/EC
30Vac
|
PDF
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION 5 4 2 3 - LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S CM 00 - _ B y - _ P LTR G1 DESCRIPTION DATE APVD M.T D.Z 12AUG13 REVISED PER E C O -13 - 0 1 073 8
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OCR Scan
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12AUG13
07NOV02
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PDF
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