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    SI2356DS Price and Stock

    Vishay Siliconix SI2356DS-T1-GE3

    MOSFET N-CH 40V 4.3A TO236
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    DigiKey SI2356DS-T1-GE3 Cut Tape 11,847 1
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    SI2356DS-T1-GE3 Digi-Reel 11,847 1
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    SI2356DS-T1-GE3 Reel 11,700 3,000
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    RS SI2356DS-T1-GE3 Bulk 6,000
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    New Advantage Corporation SI2356DS-T1-GE3 30,000 1
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    Vishay Siliconix SI2356DS-T1-BE3

    N-CHANNEL 40-V (D-S) MOSFET
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    DigiKey SI2356DS-T1-BE3 Digi-Reel 8,990 1
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    SI2356DS-T1-BE3 Cut Tape 8,990 1
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    SI2356DS-T1-BE3 Reel 6,000 3,000
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    New Advantage Corporation SI2356DS-T1-BE3 9,000 1
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    Vishay Intertechnologies SI2356DS-T1-BE3

    Transistor MOSFET N-CH 40V 4.3A 3-Pin SOT-23 - Tape and Reel (Alt: SI2356DS-T1-BE3)
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    Avnet Americas SI2356DS-T1-BE3 Reel 6,000 18 Weeks 3,000
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    Mouser Electronics SI2356DS-T1-BE3 106,460
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    Newark SI2356DS-T1-BE3 Bulk 6,000
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    TTI SI2356DS-T1-BE3 Reel 42,000 3,000
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    TME SI2356DS-T1-BE3 1
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    EBV Elektronik SI2356DS-T1-BE3 19 Weeks 3,000
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    Vishay Intertechnologies SI2356DS-T1-GE3

    Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3)
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    Avnet Americas SI2356DS-T1-GE3 Reel 6 Weeks 6,000
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    Mouser Electronics SI2356DS-T1-GE3 265,075
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    Newark SI2356DS-T1-GE3 Cut Tape 31,494 5
    • 1 $0.456
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    SI2356DS-T1-GE3 Reel 12,000 3,000
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    Bristol Electronics SI2356DS-T1-GE3 50
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    Quest Components SI2356DS-T1-GE3 4,800
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    TTI SI2356DS-T1-GE3 Reel 63,000 3,000
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    TME SI2356DS-T1-GE3 5,431 1
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    • 1000 $0.106
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    Chip 1 Exchange SI2356DS-T1-GE3 81,521
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    Avnet Asia SI2356DS-T1-GE3 8 Weeks 6,000
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    EBV Elektronik SI2356DS-T1-GE3 7 Weeks 3,000
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    Wuhan P&S SI2356DS-T1-GE3 18,000 1
    • 1 $0.89
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    Others SI2356DS

    AVAILABLE EU
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    ComSIT USA SI2356DS 11,250
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    Find more SI2356DS price and stock on Findchips.com

    SI2356DS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2356DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 4.3A SOT-23 Original PDF

    SI2356DS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2356DS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. ID (A)a 0.051 at VGS = 10 V 4.3 0.054 at VGS = 4.5 V 4.1 0.070 at VGS = 2.5 V 3.6 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization:


    Original     		Si2356DS O-236 OT-23) Si2356DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2356DS-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si2356DS-GE3 AN609, 5067u 5842u 1836m 5290u 3375m 7631u 8235m 11-Jul-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2356DS www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si2356DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3638 High Efficiency, 140V 250mA Step-Down Regulator Features n n n n n n n n n n Wide Operating Input Voltage Range: 4V to 140V Internal Low Resistance Power MOSFET No Compensation Required Adjustable 20mA to 250mA Maximum Output Current Low Dropout Operation: 100% Duty Cycle


    Original     		LTC3638 250mA 3990/LT3990-3 LT3990-5 350mA DFN10, MSOP10 LTC3891 QFN20, PDF