Power Tubes

Abstract: 6DW5
Contextual Info: w SYLVANIA SYLVANIA engineering data service A D V A N C E DATA MECHANICAL DATA T-6 1/2 Bulb Base E9-1, Small Button 9-Pin Outline 6-4 9CK Basing Coated U nipotential Cathode Any Mounting Position ELECTRICAL DATA HEATER CHARACTERISTICS 6DW5 12DW5 12.6 Volts

ecc832

Abstract: 12dw7 ECC83 ecc 83 12dw7 tube ecc823 ECC 83 tube ON 823 ecc 82 ECC82
Contextual Info: ECC832 - 12DW7 ECC832 Combinated double triode for special purposes Base: NOVAL Uf If Dimension and connections: = 6,3 or 12,6 V = 300 or 150 mA Typical characteristic: system I. system II. pin 6,7,8 (pin 1,2,3) = 250 V 250 V Ua = -2 V -8,5 V Ug Ia = 1,2 mA

Power Tubes

Abstract: 6DW5 12DW5
Contextual Info: T6± SYLVANIA TYPE 6DW 5 12DW5 MECHANICAL DATA B u lb . T -6 V 2 Base. E9-1, M in ia tu re B u tto n 9-P in

12dw7

Abstract: 12dw7 tube I960 bi 7700 dissimilar Scans-0017278
Contextual Info: TEN TATIVE DATA I2DW7 TUNO-SOL DOUBLE T R IO D E MINIATURE TYPE COATED UN I POTENTIAL CATHODE HEATER SERIES PARALLEL 12.6 VOLTS 0 .1 5 AMP. 6 .3 VOLTS 0 .3 0 AMP. AC OR DC ANY MOUNTING PO SITION GLASS BULB SMA L L BUTTON 9 P I N BASE THE 12DW7 IS A D IS S IM IL A R DOUBLE TRIODE IN THE 9 PIN MINIATURE CONSTRUC­

12dw7

Abstract: tubes 12AU7 sylvania 12AU7 sylvania 12au7 tubes 12AU7 12AX7 data 12ax7 12ax7 tube 12AU7 circuit Scans-0017278
Contextual Info: T6* w SY lV A N IA TYPE 12DW7 A F A M P L IF IE R A N D P H A SE IN V E R TE R 2G MECHANICAL DATA B u lb . T -6 H , Small B u tto n 9-Pin

12dw7

Abstract: ecc832 ECC83 12dw7 tube ECC82 ecc 83 ecc 82
Contextual Info: ECC832 - 12DW7 V» S tu 1 X O et ui Lk V z u900 2 E O tn 5 ui § X Ug V) O et Excellence with every decibel £Kcettence w ith e ve ry d e tib e i ECC832 Combinateci double triode for special purposes Base: noval = 6,3 or 12,6 v = 300 or 150 mA Typical characteristic:

WD001

Contextual Info: User Manual Micro810 Programmable Controllers Catalog Numbers 2080-LC10-12AWA, 2080-LC10-12QWB, 2080-LC10-12QBB, 2080-LC10-12DWD Important User Information Solid-state equipment has operational characteristics differing from those of electromechanical equipment. Safety

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)

Contextual Info: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)

tamura 24h

Contextual Info: SINGLE OUTPUT SWITCHING POW ER SUPPLIES w< T O File No. E140527 File No.s 2619, 2620, File No. LR64183 File No.s R9451115 R9451573 R9551007 R9650078 R9650068 MITI approved for Japan MICROTRAN. Tamura switching power supplies are now avail­ able in a Universal input series with an input range of

100DM

Abstract: 1519B P4C164 P4C164L
Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

C559

Abstract: IRGRDN300M12 IRGDDN300M12
Contextual Info: IRGDDN300M12 IRGRDN300M12 — hecnner "SINGLE SW ITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V CE= 1200V lc = 300A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce ON < 2.7V tsc> 10ms

1519B

Abstract: 1519C P4C164 P4C164L
Contextual Info: P4C164/164L P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Output Enable and Dual Chip Enable Control Functions High Speed Equal Access and Cycle Times – 8/10/12/15/20/25 ns (Commercial) – 10/12/15/20/25/35 (Industrial)

P-1345B-CTA

Abstract: S-1308-SB09 P-1328-CTA S-1324-STA P-1360WE P-1334B-ST P-1324-CTA P-1334-CTA S-1324-CTA P-1360B-SB
Contextual Info: 1300 SERIES RECTANGULAR CONNECTORS f Introduction M IN IC O N of sm all, re c ­ so ld erin g , crim ping, and w ire w rap p in g along with v a ­ tangular, m u lti-co n tact co n n ecto rs w hich H IR O S E has 1300 se ries rious ac es so ries are av a ila b le for a w id e rang e of a p ­

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS a - FEATURES • Full CMOS, 6T Cell ■ Output Enable and Dual Chip Enable Control Functions ■ High Speed Equal Access and Cycle Times

Memory

Abstract: FT6264(L)
Contextual Info: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

117L7

Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

166Q

Abstract: P4C164 P4C164L
Contextual Info: P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS 7$ - FEATURES • Full CMOS, 6T Cell ■ Output Enable and Dual Chip Enable Control

FT6264

Abstract: 25l32
Contextual Info: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)