MWT-A970
Abstract: AVC 703
Text: MwT-A9 18 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y r +24.5 dBm OUTPUT POWER AT 12 GHz 9 dB SMALL SIGNAL GAIN AT 12 GHz 1.6 dB NOISE FIGURE AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE
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0g18
Abstract: 0G66
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band am pli fiers. The hermetically sealed metal-ceram ic package as
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MGF1403B
MGF1403B
F1403B
12GHz
0g18
0G66
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Untitled
Abstract: No abstract text available
Text: MwT-S7 18 GHz High Gain, Low Noise GaAs FET MICROWAVE TECHNOLOGY n • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO
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2388
Abstract: 1S80
Text: S M F -0 6 0 2 0 e itC T A O N « Sam sung M icrow ave Sem iconductor P O W O r O p t im iz e d GaAs FET 2-14 GHz Description Features The SMF-06020 Is a packaged version of the SMF-06000. The chip Is a 600 urn n-channel M ES FET with 0.5 jim gate length, utilizing Samsung Microwave’s power optimized P5
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SMF-06020
SMF-06020
SMF-06000.
SMF-06000
2388
1S80
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
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MGF1902B
MGF1902B
MGF13Q2.
12GH2
30rnA
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