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    12N50C3 Search Results

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    12N50C3 Price and Stock

    Rochester Electronics LLC SPI12N50C3IN

    N-CHANNEL POWER MOSFET
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    DigiKey SPI12N50C3IN Bulk 268
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    Infineon Technologies AG SPW12N50C3FKSA1

    MOSFET N-CH 560V 11.6A TO247-3
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    Rochester Electronics SPW12N50C3FKSA1 2,770 1
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    Infineon Technologies AG SPB12N50C3ATMA1

    MOSFET N-CH 560V 11.6A TO263-3
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    DigiKey SPB12N50C3ATMA1 Reel
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    SPB12N50C3ATMA1 Digi-Reel 1
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    SPB12N50C3ATMA1 Cut Tape
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    Rochester Electronics SPB12N50C3ATMA1 89 1
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    Infineon Technologies AG SPA12N50C3XKSA1

    MOSFET N-CH 560V 11.6A TO220-FP
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    Rochester Electronics LLC SPP12N50C3XKSA1

    MOSFET N-CH 500V 11.6A TO220-3
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    DigiKey SPP12N50C3XKSA1 Tube 268
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    12N50C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12N50C3

    Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
    Text: 12N50C3 12N50C3, 12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking PDF

    TEA1713

    Abstract: 6NK60 04N60C3 equivalent bs170 replacement 04n60c3 04n60c3 replacement TEA1523 diode zd201 KD366 k3934
    Text: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 01 — 22 March 2010 Application note Document information Info Content Keywords TEA1713, PFC, burst mode, adapter, LCD TV, Plasma TV, resonant, converter. Abstract The TEA1713 integrates a controller for Power Factor Correction PFC


    Original     		AN10881 TEA1713 TEA1713, AN10881 6NK60 04N60C3 equivalent bs170 replacement 04n60c3 04n60c3 replacement TEA1523 diode zd201 KD366 k3934 PDF

    12N50C3

    Abstract: TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2
    Text: 12N50C3, 12N50C3 12N50C3, 12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2


    Original     		SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 P-TO262 P-TO263-3-2 P-TO220-3-1 12N50C3 TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 2 — 26 September 2011 Application note Document information Info Content Keywords TEA1713, adapter, LCD TV, Plasma TV, resonant, converter, PFC, Burst mode Abstract The TEA1713 integrates a controller for Power Factor Correction PFC


    Original     		AN10881 TEA1713 TEA1713, PDF

    TEA1613

    Abstract: TEA1713 04n60c3 LTV817B-S AN10907 TEA1623P ICE1PCS02 TEA1613T 04N60C3 equivalent mv silicon c320
    Text: AN10907 TEA1613T resonant power supply control IC Rev. 1 — 28 December 2010 Application note Document information Info Content Keywords TEA1613T, burst mode, adapter, LCD TV, plasma TV, resonant, converter. Abstract This application note discusses the TEA1613T application functions.


    Original     		AN10907 TEA1613T TEA1613T, TEA1613 TEA1713 04n60c3 LTV817B-S AN10907 TEA1623P ICE1PCS02 04N60C3 equivalent mv silicon c320 PDF

    12N50C3

    Abstract: 12N50c
    Text: 12N50C3 12N50C3, 12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP12N50C3 12N50C3 12N50c PDF

    12N50C3

    Abstract: No abstract text available
    Text: 12N50C3 12N50C3, 12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP12N50C3 12N50C3 PDF

    12N50C3

    Abstract: PG-TO220-FP PG-TO220-3-31 SPA12N50C3 SPI12N50C3 SPP12N50C3 smd transistor 331
    Text: 12N50C3 12N50C3, 12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 12N50C3 PG-TO220-FP SPA12N50C3 SPI12N50C3 SPP12N50C3 smd transistor 331 PDF

    12N50C3

    Abstract: TRANSISTOR 12N50C3
    Text: 12N50C3 12N50C3, 12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge FP PG-TO220-3-31 PG-TO262- • Periodic avalanche rated PG-TO220 2 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 12N50C3 TRANSISTOR 12N50C3 PDF

    12N50C3

    Abstract: TRANSISTOR 12N50C3 SPW12N50C3 12N50C
    Text: 12N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW12N50C3 P-TO247 Q67040-S4580 12N50C3 12N50C3 TRANSISTOR 12N50C3 SPW12N50C3 12N50C PDF

    12N50c

    Abstract: 12N50C3 PG-TO263-3-2 SPB12N50C3 SPP12N50C3 a187v
    Text: 12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB12N50C3 PG-TO263 Q67040-S4641 12N50C3 12N50c 12N50C3 PG-TO263-3-2 SPB12N50C3 SPP12N50C3 a187v PDF

    LP2920

    Abstract: No abstract text available
    Text: AN11227 SSL4120 resonant power supply control IC with PFC Rev. 1 — 27 November 2012 Application note Document information Info Content Keywords SSL4120, converter, LED driver, lighting, resonant, converter, PFC, burst mode Abstract The SSL4120 integrates a controller for Power Factor Correction PFC


    Original     		AN11227 SSL4120 SSL4120, LP2920 PDF

    Untitled

    Abstract: No abstract text available
    Text: 12N50C3 12N50C3, 12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 PDF

    12n50c3

    Abstract: TRANSISTOR SMD MARKING CODE 7A TRANSISTOR 12N50C3 12n50c
    Text: 12N50C3, 12N50C3 12N50C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		SPP12N50C3, SPI12N50C3 SPA12N50C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP12N50C3 12n50c3 TRANSISTOR SMD MARKING CODE 7A TRANSISTOR 12N50C3 12n50c PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    TEA1713

    Abstract: SMD DIODE UF4007 diode smd d312 EF20 TRANSFORMER ef20 pc40 QP-3325 smd diode c321 pc40 core LL4148 nxp UM10379
    Text: UM10379 Typical 250 W LCD TV AC-DC power supply application with the TEA1713 PFC and half-bridge resonant controller Rev. 01 — 16 April 2010 User manual Document information Info Content Keywords TEA1713, half bridge, PFC controller, LLC resonant, high efficiency, zero


    Original     		UM10379 TEA1713 TEA1713, TEA1713. UM10379 SMD DIODE UF4007 diode smd d312 EF20 TRANSFORMER ef20 pc40 QP-3325 smd diode c321 pc40 core LL4148 nxp PDF

    TRANSISTOR 12N50C3

    Abstract: 12N50C3 SPB12N50C3 SPP12N50C3
    Text: 12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB12N50C3 P-TO263-3-2 Q67040-S4641 12N50C3 TRANSISTOR 12N50C3 12N50C3 SPB12N50C3 SPP12N50C3 PDF

    12N50C3

    Abstract: TRANSISTOR 12N50C3 12N50c TRANSISTOR SMD MARKING CODE 7A SPA12N50C3 SPI12N50C3 SPP12N50C3
    Text: 12N50C3, 12N50C3 12N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1


    Original     		SPP12N50C3, SPI12N50C3 SPA12N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP12N50C3 12N50C3 TRANSISTOR 12N50C3 12N50c TRANSISTOR SMD MARKING CODE 7A SPA12N50C3 SPI12N50C3 SPP12N50C3 PDF

    12N50C3

    Abstract: No abstract text available
    Text: 12N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW12N50C3 P-TO247 Q67040-S4580 12N50C3 12N50C3 PDF

    12N50C3

    Abstract: TRANSISTOR 12N50C3 SPI12N50C3 SMD TRANSISTOR MARKING code TC SPP12N50C3 TRANSISTOR SMD MARKING CODE 7A PG-TO220-3-31 SPA12N50C3 Q67040-S4578
    Text: 12N50C3 12N50C3, 12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 12N50C3 TRANSISTOR 12N50C3 SPI12N50C3 SMD TRANSISTOR MARKING code TC SPP12N50C3 TRANSISTOR SMD MARKING CODE 7A SPA12N50C3 Q67040-S4578 PDF

    12n50c

    Abstract: DSA+1-16a
    Text: 12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB12N50C3 PG-TO263 Q67040-S4641 12N50C3 12n50c DSA+1-16a PDF