Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUD50N03-12P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SUD50N03-12P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SUU50N03-12P
Abstract: No abstract text available
Text: SUU50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251
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SUU50N03-12P
O-251
S-31872--Rev.
15-Sep-03
SUU50N03-12P
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SUD50N03-12P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N03-12P
18-Jul-08
SUD50N03-12P
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SUU50N03-12P
Abstract: No abstract text available
Text: SUU50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251
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SUU50N03-12P
O-251
01lectual
18-Jul-08
SUU50N03-12P
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SUR50N03-12P
Abstract: No abstract text available
Text: SPICE Device Model SUR50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUR50N03-12P
18-Jul-08
SUR50N03-12P
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SUU50N03-12P
Abstract: No abstract text available
Text: SUU50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251
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SUU50N03-12P
O-251
08-Apr-05
SUU50N03-12P
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Untitled
Abstract: No abstract text available
Text: SUM40N02-12P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 20 ID D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for High-Side Synchronous Rectifier (A)a 0.012 @ VGS = 10 V
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SUM40N02-12P
O-263
S-03078--Rev.
03-Feb-03
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SUM40N02-12P
Abstract: No abstract text available
Text: SUM40N02-12P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 20 ID D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for High-Side Synchronous Rectifier (A)a 0.012 @ VGS = 10 V
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SUM40N02-12P
O-263
S-03541--Rev.
24-Mar-03
SUM40N02-12P
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Untitled
Abstract: No abstract text available
Text: SUR50N03-12P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 17.5 APPLICATIONS 0.0175 @ VGS = 4.5 V 14.5 D DC/DC Converters − High-Side, Desktop CPU Core D Synchronous Rectifiers VDS (V)
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SUR50N03-12P
O-252
SUR50N03-12P--E3
SUR50N03-12P-T4--E3
08-Apr-05
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SUD50N02-12P
Abstract: No abstract text available
Text: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c APPLICATIONS 0.026 @ VGS = 4.5 V 27c D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server VDS (V) 20 D TrenchFETr Power MOSFET
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SUD50N02-12P
O-252
S-31269--Rev.
16-Jun-03
SUD50N02-12P
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SUD50N02-12P
Abstract: 9046a
Text: SUD50N02-12P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency ID (A)a 0.012 @ VGS = 10 V 17 0.026 @ VGS = 4.5 V
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SUD50N02-12P
O-252
S-22454--Rev.
20-Jan-03
SUD50N02-12P
9046a
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Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGSCD-12P Product Details Military/Aerospace High Performance Relays
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JMGSCD-12P
JMGSCD-12P
M39016
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SUR50N03-12P
Abstract: No abstract text available
Text: SUR50N03-12P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 17.5 APPLICATIONS 0.0175 @ VGS = 4.5 V 14.5 D DC/DC Converters − High-Side, Desktop CPU Core D Synchronous Rectifiers VDS (V)
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SUR50N03-12P
O-252
SUR50N03-12P--E3
SUR50N03-12P-T4--E3
Unit75
S-32695--Rev.
19-Jan-04
SUR50N03-12P
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Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details MW4-12P Product Details Military/Aerospace High Performance Relays
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MW4-12P
MW4-12P
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SUD50N02-12P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N02-12P
0-to-10V
20-Mar-03
SUD50N02-12P
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ON285
Abstract: SUR50N03-12P
Text: SPICE Device Model SUR50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUR50N03-12P
0-to10
21-Jan-04
ON285
SUR50N03-12P
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SUP60N06-12P
Abstract: No abstract text available
Text: SPICE Device Model SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SUP60N06-12P
18-Jul-08
SUP60N06-12P
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SUR50N03-12P
Abstract: No abstract text available
Text: SUR50N03-12P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 17.5 APPLICATIONS 0.0175 @ VGS = 4.5 V 14.5 D DC/DC Converters − High-Side, Desktop CPU Core D Synchronous Rectifiers VDS (V)
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SUR50N03-12P
O-252
SUR50N03-12P--E3
SUR50N03-12P-T4--E3
18-Jul-08
SUR50N03-12P
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bts 2140 1b data sheet
Abstract: SUM40N02-12P
Text: SPICE Device Model SUM40N02-12P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM40N02-12P
S-60673Rev.
01-May-06
bts 2140 1b data sheet
SUM40N02-12P
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Untitled
Abstract: No abstract text available
Text: SUU50N03-12P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers
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SUU50N03-12P
O-251
S-31872--Rev.
15-Sep-03
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sup60n06
Abstract: No abstract text available
Text: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SUP60N06-12P
2002/95/EC
O-220AB
SUP60N06-12P-E3
SUP60N06-12P-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sup60n06
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12p mosfet
Abstract: SUD50N02-12P
Text: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c 0.026 @ VGS = 4.5 V 27c APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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SUD50N02-12P
O-252
SUD50N02-12P--E3
18-Jul-08
12p mosfet
SUD50N02-12P
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Untitled
Abstract: No abstract text available
Text: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SUP60N06-12P
2002/95/EC
O-220AB
SUP60N06-12P-E3
SUP60N06-12P-GE3
11-Mar-11
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12P05
Abstract: 12P06 P12P05 12P08 MTP12P05 P12P08 TM12P10 TM12P08 mtp12p06
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TM 12P05 M TM 12P06 M TM 12P08 M TM 12P10 M T P 12P 05 M T P 12 P 0 6 M T P 12P 08 M T P 12P 10 Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S
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12P05
12P06
12P08
12P10
21A-04
O-22QAB
P12P05
MTP12P05
P12P08
TM12P10
TM12P08
mtp12p06
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