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    SUP60N06 Search Results

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    SUP60N06 Price and Stock

    Vishay Siliconix SUP60N06-12P-E3

    MOSFET N-CH 60V 60A TO220AB
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    DigiKey SUP60N06-12P-E3 Bulk
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    Bristol Electronics SUP60N06-12P-E3 396 2
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    • 100 $2.0908
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    Quest Components SUP60N06-12P-E3 316
    • 1 $6
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    • 100 $2.8
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    Vishay Siliconix SUP60N06-12P-GE3

    MOSFET N-CH 60V 60A TO220AB
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    DigiKey SUP60N06-12P-GE3 Tube
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    RS SUP60N06-12P-GE3 Bulk 500
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    Vishay Intertechnologies SUP60N06-12P-E3

    Mosfet, N Channel, 60V, 60A, To-220Ab-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Msl:-Rohs Compliant: Yes |Vishay SUP60N06-12P-E3
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    Newark SUP60N06-12P-E3 Cut Tape 500
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    Vishay Siliconix SUP60N06-18

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    Bristol Electronics SUP60N06-18 102
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    SUP60N06-18 33 1
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    Quest Components SUP60N06-18 88
    • 1 $9
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    SUP60N06-18 26
    • 1 $11.4
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    Chip 1 Exchange SUP60N06-18 3,794
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    Vishay Siliconix SUP60N06-08

    60 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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    Quest Components SUP60N06-08 200
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    SUP60N06 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP60N06 Vishay Siliconix N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUP60N06-12P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 60A TO220AB Original PDF
    SUP60N06-12P-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 60A TO220AB Original PDF
    SUP60N06-14 Vishay Siliconix Transistor - Datasheet Reference Scan PDF
    SUP60N06-18 Temic Semiconductors N-Channel Enhancement-Mode Transistors Original PDF
    SUP60N06-18 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SUP60N06-18 Vishay Siliconix N-Channel MOSFET Original PDF
    SUP60N06-18 Vishay Siliconix MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No Original PDF
    SUP60N06-18 SPICE Device Model Vishay N-Channel Enhancement-Mode Transistor Original PDF

    SUP60N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUP60N06-12P

    Abstract: SUP60N06-12P-E3 SUP60N06-12P-GE3
    Text: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SUP60N06-12P 2002/95/EC O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 11-Mar-11 SUP60N06-12P SUP60N06-12P-E3 SUP60N06-12P-GE3

    sup60n06-18

    Abstract: SUB60N06-18
    Text: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 57253--Rev. 24-Feb-98 sup60n06-18 SUB60N06-18

    Untitled

    Abstract: No abstract text available
    Text: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SUP60N06-12P 2002/95/EC O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 18-Jul-08

    SUP60N06-12P

    Abstract: SUP60N06-12P-GE3 SUP60N06-12P-E3
    Text: New Product SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SUP60N06-12P O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 15lectual 18-Jul-08 SUP60N06-12P SUP60N06-12P-GE3 SUP60N06-12P-E3

    SMP60N06-14

    Abstract: SMP60N06 70281 SMP60N06-14 equivalent SUP60N06
    Text: SMP60N06-14 N-Channel Enhancement-Mode Transistor Product Summary VDS V rDS(on) (W) ID (A) 60 0.014 60 See lowerĆcost version: SUP60N06Ć14 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SMP60N06-14 SUP60N0614 O-220AB P-36737--Rev. 30-May-94 SMP60N06-14 SMP60N06 70281 SMP60N06-14 equivalent SUP60N06

    Untitled

    Abstract: No abstract text available
    Text: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SUP60N06-12P 2002/95/EC O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SUP60N06-12P 2002/95/EC O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    sub60n06

    Abstract: sup60n06-18 SUB60N06-18
    Text: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 08-Apr-05 sub60n06 sup60n06-18 SUB60N06-18

    SUP60N06-12P

    Abstract: No abstract text available
    Text: SPICE Device Model SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SUP60N06-12P 18-Jul-08 SUP60N06-12P

    sup60n06

    Abstract: No abstract text available
    Text: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SUP60N06-12P 2002/95/EC O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sup60n06

    4604 mosfet

    Abstract: 4604 SUP60N06-18 A 3120 MOSFET 4604 AN609
    Text: SUP60N06-18_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP60N06-18 AN609 19-Dec-07 4604 mosfet 4604 A 3120 MOSFET 4604

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB60N06-18 Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUP60N06-18 SUB60N06-18 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98

    SUP60N06-12P-GE3

    Abstract: SUP60N06-12P SUP60N06-12P-E3 SUP60N06-12 69070
    Text: New Product SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SUP60N06-12P 2002/95/EC O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 18-Jul-08 SUP60N06-12P-GE3 SUP60N06-12P SUP60N06-12P-E3 SUP60N06-12 69070

    SUP60N06-18

    Abstract: SUB60N06-18 SUB60N06
    Text: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263) O-263 S-47970--Rev. 08-Jul-96 SUP60N06-18 SUB60N06-18 SUB60N06

    SUB60N06-18

    Abstract: SUP60N06-18
    Text: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263) O-263 S-47970--Rev. 08-Jul-96 SUB60N06-18 SUP60N06-18

    sup60n06-18

    Abstract: SUB60N06-18
    Text: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 18-Jul-08 sup60n06-18 SUB60N06-18

    Untitled

    Abstract: No abstract text available
    Text: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SUP60N06-12P 2002/95/EC O-220AB SUP60N06-12P-E3 SUP60N06-12P-GE3 11-Mar-11

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original     		PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB60N06-18 VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET Product Summary V(BR)DSS (V ) r DS(on) (£2) I d (A ) 60 0.018 60 TO-220AB D Q “ cT pO'N ’ ss& TO-263 G D S Top View 6 Top View s SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263tors S-57253â 24-Feb-98

    SMP60N06

    Abstract: SMP60N06-14 SUP60N06-14 FH100
    Text: T em ic SMP60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V o s V T D S (o n ) ( £ 2 ) I d (A ) 60 0 .0 1 4 60 See lower-cost version: SUP60N06-14 T O -2 2 Q A B o D R A IN connected to TA B


    OCR Scan     		PDF SMP60N06-14 SUP60N06-14 O-22QAB P-36737â ES4735 SMP60N06 SMP60N06-14 FH100

    SUP60N06-08

    Abstract: SUP60N06
    Text: Tem ic sii.conix_ SUP60N06-08 N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) 60 0.008 60 TO-220AB o J t DRAIN connected to TAB G D S Top View N-Channel MOSFET


    OCR Scan     		PDF SUP60N06-08 O-220AB P-36737--Rev. SUP60N06-08 SUP60N06