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    13-AB TRANSISTOR Search Results

    13-AB TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    13-AB TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TO -22 AB BUK953R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK953R2-40B

    MJD310

    Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
    Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282

    transistor marking z9

    Abstract: Arco Variable Capacitors MRF282
    Text: Freescale Semiconductor Technical Data MRF282 Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 transistor marking z9 Arco Variable Capacitors

    16l soic8

    Abstract: qfn16 thermal resistance
    Text: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters


    Original     		PDF ECP053 28dBm 43dBm QFN-16 ECP053 ECP053G ECP053G-500 ECP053G-1000 ECP053D ECP053D-500 16l soic8 qfn16 thermal resistance

    SD2903

    Abstract: Dow Corning 140 M229
    Text: SD2903  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION


    Original     		PDF SD2903 SD2903 Dow Corning 140 M229

    Untitled

    Abstract: No abstract text available
    Text: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION


    Original     		PDF SD2903 SD2903

    SD2903

    Abstract: No abstract text available
    Text: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION


    Original     		PDF SD2903 SD2903

    variable capacitor

    Abstract: 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4280 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:


    Original     		PDF MS4280 MS4280 100pF 180pF 100pF, variable capacitor 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor

    30pf variable capacitor

    Abstract: VARIABLE capacitor arco 463 capacitor 10uF/63V MS4080 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor 180PF
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4080 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:


    Original     		PDF MS4080 MS4080 180pF 100pF, 100pF 206nH 30pf variable capacitor VARIABLE capacitor arco 463 capacitor 10uF/63V 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor

    SD2903

    Abstract: No abstract text available
    Text: SD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB .230 x .360 4L FL M229 ORDER CODE BRANDING SD2903 SD2903 DESCRIPTION The SD2903 is a gold metallized N-channel MOS


    Original     		PDF SD2903 SD2903

    HF75-12

    Abstract: transistors MRF454 MRF454 SD1405
    Text: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 13 dB Min. @ 30MHz & 75W • Withstands 20:1 Load VSWR


    Original     		PDF HF75-12 HF75-12 MRF454 SD1405 30MHz transistors MRF454 MRF454 SD1405

    DIODE BY 255

    Abstract: C67078-S1406-A2
    Text: BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 255 200 V 13 A 0.24 Ω TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol


    Original     		PDF O-220 C67078-S1406-A2 DIODE BY 255 C67078-S1406-A2

    C67078-S1316-A3

    Abstract: No abstract text available
    Text: BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 Ω TO-220 AB C67078-S1316-A3 Maximum Ratings Parameter


    Original     		PDF O-220 C67078-S1316-A3 C67078-S1316-A3

    C67078-S1326-A3

    Abstract: No abstract text available
    Text: BUZ 71 AL Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 71 AL 50 V 13 A 0.12 Ω TO-220 AB C67078-S1326-A3 Maximum Ratings


    Original     		PDF O-220 C67078-S1326-A3 C67078-S1326-A3

    IC CD4011B

    Abstract: CD4011B CD4011BMS CD4012B CD4012BMS CD4023B CD4023BMS
    Text: CD4011BMS, CD4012BMS CD4023BMS CMOS NAND Gates November 1994 Features Pinouts • High-Voltage Types 20V Rating CD4011BMS TOP VIEW • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V A 1 14 VDD B 2 13 H J = AB 3 12 G K = CD 4 11 M = GH • Buffered Inputs and Outputs


    Original     		PDF CD4011BMS, CD4012BMS CD4023BMS CD4011BMS 100nA Require200 CD4011BMSH CD4012BMSH CD4023BMSH IC CD4011B CD4011B CD4011BMS CD4012B CD4012BMS CD4023B CD4023BMS

    CD4012B

    Abstract: CD4011B CD4011BMS CD4012BMS CD4023B CD4023BMS
    Text: CD4011BMS, CD4012BMS CD4023BMS CMOS NAND Gates November 1994 Features Pinouts • High-Voltage Types 20V Rating CD4011BMS TOP VIEW • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V A 1 14 VDD B 2 13 H J = AB 3 12 G K = CD 4 11 M = GH • Buffered Inputs and Outputs


    Original     		PDF CD4011BMS, CD4012BMS CD4023BMS CD4011BMS 100nA CD4011BMSH CD4012BMSH CD4023BMSH CD4012B CD4011B CD4011BMS CD4012BMS CD4023B CD4023BMS

    buz7l

    Abstract: BUZ 140 L DIODE BUZ BUZ71S2 C160 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 71A50 BUZ71 Siemens
    Text: SIEMENS SIPMOS Power Transistors BUZ 71 BUZ 71 A, BUZ 71 S2 • N channel • Enhancement mode • Avalanche-rated Type V„ Tc ^DS on Package 1> Ordering Code BUZ 71 50 V 14 A 28 *C 0.10 Q TO-220 AB C67078-S1316-A2 BUZ 71 A 50 V 13 A 25 'C 0.12 Q TO-220 AB


    OCR Scan     		PDF O-220 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 71/BUZ SIL03U6 buz7l BUZ 140 L DIODE BUZ BUZ71S2 C160 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 71A50 BUZ71 Siemens

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A ^bS on 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1406-A2 fi535bà Q064b51

    DIODE BUZ 94

    Abstract: No abstract text available
    Text: SIEMENS BUZ 255 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A RoSlon 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1406-A2 40-------V DIODE BUZ 94

    diode BFT 99

    Abstract: ot 306 buz71a Transistor BFT 99 Transistor BFT 44 IR4060
    Text: SIEMENS BUZ 71 A N ot fo r new design SiPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 A Vbs 50 V b 13 A ^DS on 0.12 ß Package Ordering Code TO-220 AB C67078-S1316-A3 Maximum Ratings Parameter Symbol Values Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1316-A3 GPT35I55 diode BFT 99 ot 306 buz71a Transistor BFT 99 Transistor BFT 44 IR4060

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b f f DS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 £2 TO-220 AB C67078-S1316-A3 Maxim um Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1316-A3 GPT05155 0235b05

    sd 431 transistor

    Abstract: transistor buz 210
    Text: SIEMENS BUZ 71 AL N o t fo r n e w rip a ig n SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 71 AL Vbs 50 V 13 A flbs on 0.12 ß Package Ordering Code TO-220 AB C67078-S1326-A3 Maximum Ratings Parameter


    OCR Scan     		PDF O-220 C67078-S1326-A3 GD-05155 sd 431 transistor transistor buz 210

    VPT05381

    Abstract: BUZ71
    Text: SIEMENS SIPMOS Power Transistors BUZ 71 BUZ 71 A, BUZ 71 S2 • N channel • Enhancement mode • Avalanche-rated S t# VPT05381 Type VDS Id Tc ^DS on Package O rdering Code BUZ 71 50 V 14 A 28 "C 0.10 Q TO-220 AB C67078-S1316-A2 BUZ 71 A 50 V 13 A 25 "C


    OCR Scan     		PDF VPT05381 O-220 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 VPT05381 BUZ71

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON SD2903 MMMIlLIlMMSiDÊS RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS P R E L IM IN A R Y D A T A 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB DESCRIPTION The SD2903 is a gold metallized N-channel MOS field effect RF power transistor. The SD2903 is


    OCR Scan     		PDF SD2903 SD2903