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Motorola Semiconductor Products MRF282Z RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, L BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
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Quest Components	MRF282Z		2			1 $38.22 10 $38.22 100 $38.22 1000 $38.22 10000 $38.22	Buy Now

MRF282 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
MRF282	Freescale Semiconductor	MRF282SR1, MRF282ZR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs	Original	PDF
MRF282	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
MRF282	Motorola	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	PDF
MRF282	Motorola	MRF282SR1, MRF282ZR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF282S	Motorola	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	PDF
MRF282SR1	Freescale Semiconductor	2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF282SR1	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
MRF282SR1	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-200S	Original	PDF
MRF282SR1	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF282SR1	Motorola	RF Power Field Effect Transistors	Scan	PDF
MRF282Z	Motorola	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	PDF
MRF282ZR1	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
MRF282ZR1	Freescale Semiconductor	2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	Original	PDF
MRF282ZR1	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-200Z	Original	PDF

MRF282ZR1	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF282ZR1	Motorola	RF Power Field Effect Transistors	Scan	PDF

MRF282 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
100B201JT500XT Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282	PDF
ferroxcube for ferrite beads Abstract: MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads	PDF
GX03005522 Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 GX03005522 200S CDR33BX104AKWS MRF282ZR1 GX0300-55-22 MRF282	PDF
ferroxcube ferrite beads Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414 Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 ferroxcube ferrite beads C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414	PDF
imd 5210 Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL	PDF
100B270JCA500X Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282	PDF
MRF282 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--1 MRF282SR1 MRF282--1 MRF282	PDF
RE65G1R00 Abstract: 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282SR1 MRF282ZR1 Arlon mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 RE65G1R00 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282ZR1 Arlon mjd310 MRF282	PDF
MRF282 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 DEVICEMRF282/D MRF282	PDF
bourns 1810 Abstract: MRF282 C10B4 marking amplifier j02 56-590-65-3B Ferrite Beads MJD320 Variable Capacitors Arco rm73b2b120jt MALLORY tantalum CAPACITORS Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 bourns 1810 C10B4 marking amplifier j02 56-590-65-3B Ferrite Beads MJD320 Variable Capacitors Arco rm73b2b120jt MALLORY tantalum CAPACITORS	PDF
transistor marking z9 Abstract: Arco Variable Capacitors MRF282 Text: Freescale Semiconductor Technical Data MRF282 Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 transistor marking z9 Arco Variable Capacitors	PDF
Arlon Abstract: MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1* MRF282ZR1* RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1* MRF282ZR1* DEVICEMRF282/D Arlon MRF282	PDF
MRF282 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 MRF282	PDF
300 uF 450 VDC Mallory Capacitor Abstract: 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282S MRF282Z MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282S MRF282Z MRF282S 300 uF 450 VDC Mallory Capacitor 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282Z MRF282	PDF

27271SL Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 27271SL MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310	PDF
transistor z4 n Abstract: NPN transistor mhz s-parameter mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282/D transistor z4 n NPN transistor mhz s-parameter mjd310 MRF282	PDF
MJD310 Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282 Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282	PDF
MRF282 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 MRF282	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
BFG591 amplifier Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 Text: RF手册第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品恩智浦RF手册令设计更简易恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP	Original	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23	PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
CG SERIES MALLORY CAPACITOR Abstract: gps mtbf Text: MOTOROLA O rder this docum ent by M RF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D esigned fo r class A and class AB PCN and PCS base statio n ap plicatio ns at	OCR Scan	RF282/D CG SERIES MALLORY CAPACITOR gps mtbf	PDF
GX-0300 Arlon Abstract: variable capacitor GX-300 MJD320 22 pf variable capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier	OCR Scan	IS22I MRF282S MRF282Z GX-0300 Arlon variable capacitor GX-300 MJD320 22 pf variable capacitor	PDF
GX-0300 Arlon Abstract: MJD320 ATC 116 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier	OCR Scan	MRF282S MRF282Z GX-0300 Arlon MJD320 ATC 116	PDF

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Motorola Semiconductor Products MRF282Z

MRF282 Datasheets (16)

MRF282 Datasheets Context Search

100B201JT500XT

ferroxcube for ferrite beads

GX03005522

ferroxcube ferrite beads

imd 5210

100B270JCA500X

MRF282

RE65G1R00

MRF282

bourns 1810

transistor marking z9

Arlon

MRF282

300 uF 450 VDC Mallory Capacitor

27271SL

transistor z4 n

MJD310

MRF282

MC68B21CP

BFG591 amplifier

UPC8236

CG SERIES MALLORY CAPACITOR

GX-0300 Arlon

GX-0300 Arlon