GX03005522 Search Results

GX03005522 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G2225X7R225KT3AB Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6	PDF
MRF21085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085	PDF
MRF19085 Abstract: CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 MRF19085R3 MRF19085SR3 100B5R1 Text: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19085/D MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 MRF19085 MRF19085R3 MRF19085SR3 CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 100B5R1	PDF
100B471JP200X Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X	PDF
100B201JT500XT Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282	PDF
Untitled Abstract: No abstract text available Text: , Una. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating	Original	MRF897R BD136 390-J TL1-TL11 UT-85-M17 GX-0300-55-22,	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier	Original	MRF19045R3 MRF19045SR3	PDF
MRF282 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--1 MRF282SR1 MRF282--1 MRF282	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF19045 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19045 MRF19045LR3 MRF19045LSR3	PDF
MRF6S21100H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 5, 7/2005 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110	Original	MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100H	PDF
MRF19085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF19085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19085LR3 MRF19085LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19085 MRF19085LR3 MRF19085LSR3	PDF
MRF19085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF19085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19085LR3 MRF19085LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19085 MRF19085LR3 MRF19085LSR3	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
MRF897 Abstract: No abstract text available Text: ZPioaucti, Una. 'Istieu TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF897 RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class-AB linear	Original	MRF897 BD136 390-J TL1-TL11 UT-85-M17 GX-0300-55-22, MRF897	PDF

MRF19085 Abstract: AN1955 CDR33BX104AKWS GX-0300-55-22 MRF19085LR3 MRF19085LSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF19085 Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19085LR3 MRF19085LSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF19085 MRF19085LR3 MRF19085LSR3 MRF19085LR3 MRF19085 AN1955 CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3	PDF
TUI-lf-9 Abstract: ATC700B392JT50X Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched	Original	MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X	PDF
400S Abstract: AN1955 CDR33BX104AKWS MRF19045LR3 MRF19045LSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045LR3 MRF19045LSR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF19045/D MRF19045LR3 MRF19045LSR3 MRF19045LR3 400S AN1955 CDR33BX104AKWS MRF19045LSR3	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
178 09T Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor	PDF
Transistor D 2494 Abstract: fj series capacitor panasonic J103 transistor Panasonic FJ Series Capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F8 97 The RF Line N P N S ilic o n R F P o w e r T ra n s is to r Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating	OCR Scan	MRF897 Transistor D 2494 fj series capacitor panasonic J103 transistor Panasonic FJ Series Capacitor	PDF
power tr unit j122 5 pin Abstract: power tr unit j122 capacitor mallory CAPACITOR chip murata mtbf MUR5120T3 J119 transistor bd135 equivalent mallory 170 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	BD135) BD136) GX-0300-55-22, MRF15090 power tr unit j122 5 pin power tr unit j122 capacitor mallory CAPACITOR chip murata mtbf MUR5120T3 J119 transistor bd135 equivalent mallory 170	PDF
bd135 equivalent Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060 MRF20060S Impedanc159 IS22I bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006	PDF
diode wb1 Abstract: MRF896S WB1 DIODE diode wb2 1n4001 motorola ECEV1HV100R Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F896 M R F896S The RF Line NPN S ilico n RF P o w er T ran sisto rs Motorola Prafanwl DavlcM Designed for 24 Volt UHF large-signal, common emitter, Class AB and Class A linear am plifier applications in industrial and commercial FM/AM equipment	OCR Scan	MRF896 MRF896S diode wb1 WB1 DIODE diode wb2 1n4001 motorola ECEV1HV100R	PDF
rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ	PDF

GX03005522 Search Results

GX03005522 Datasheets Context Search

G2225X7R225KT3AB

MRF21085

MRF19085

100B471JP200X

100B201JT500XT

Untitled

Untitled

MRF282

Untitled

MRF6S21100H

MRF19085

MRF19085

2a258 transistor

MRF897

MRF19085

TUI-lf-9

400S

Motorola transistors MRF 947

178 09T

Transistor D 2494

power tr unit j122 5 pin

bd135 equivalent

diode wb1

rohm mtbf