Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability
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AFT09S200W02N
716lidated
AFT09S200W02NR3
AFT09S200W02GNR3
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G2225X7R225KT3AB
Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600H
MRF6VP2600HR6
G2225X7R225KT3AB
MRF6VP2600KH
TUI-lf-9
UT-141C-25
DVB-T Schematic
tuo-4
MRF6VP2600H
AN1955
ATC100B470JT500XT
MRF6VP2600HR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S9102N
MRF8S9102NR3
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Abstract: No abstract text available
Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-
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MW7IC915N
MW7IC915N
MW7IC915NT1
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
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MRF8S9100H
MRF8S9100HR3
MRF8S9100HSR3
MRF8S9100HR3
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1
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MRF6S9060N
MRF6S9060NR1
MRFE6S9060NR1.
PCN12895
MRF6S9060NBR1
MRF6S9060NR1
MRF6S9060NBR1
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NIPPON CAPACITORS
Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600H
MRF6VP2600HR6
NIPPON CAPACITORS
MRF6VP2600HR6 application notes
Tantalum chip Capacitor 226 20k
MRF6VP2600HR6
Nippon chemi
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRFE6S9060N
MRFE6S9060NR1
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
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MRFE6S9160H
MRFE6S9160HR3
MRFE6S9160HSR3
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MRF6V10010NR4
Abstract: AN1955 d2460 A03TK
Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for
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MRF6V10010N
MRF6V10010NR4
MRF6V10010NR4
AN1955
d2460
A03TK
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MRFE6S9200H
Abstract: 465B A114 A115 AN1955 JESD22 MRFE6S9200HR3 MRFE6S9200HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRFE6S9200H
MRFE6S9200HR3
MRFE6S9200HSR3
MRFE6S9200H
465B
A114
A115
AN1955
JESD22
MRFE6S9200HSR3
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Resistor mttf
Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION
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MRF6S9060N
MRF6S9060NR1
MRFE6S9060NR1.
PCN12895
MRF6S9060NBR1
MRF6S9060NBR1
Resistor mttf
MRFE6S9060NR1
A114
A115
C101
JESD22
MRF6S9060N
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A114
Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9160H
MRF6S9160HR3/HSR3
MRFE6S9160HR3/HSR3.
PCN12895
MRF6S9160HR3
MRF6S9160HSR3
A114
AN1955
JESD22
MRF6S9160H
MRF6S9160HSR3
atc100b220j
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MMRF1315N
MMRF1315NR1
IS--95
7/2014Semiconductor,
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ATC100B100JT500XT
Abstract: MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1
Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
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MRF9060N
MRF9060NR1
ATC100B100JT500XT
MRF9060NR1
945 TRANSISTOR
FREESCALE PACKING
MARKING WB1
A113
ATC100B3R9CT500XT
ATC100B470JT500XT
JESD22
MRF9060NBR1
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MMRF1019NR4
Abstract: No abstract text available
Text: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for
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MMRF1019N
MMRF1019NR4
7/2014Semiconductor,
MMRF1019NR4
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C3225X7R2A225KT
Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600H
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
C3225X7R2A225KT
8-30VDC
74C125
UT-141C-25
rf Amplifier mhz Doherty 470-860
Rogers RO4350B microstrip
ATC100B240JT500X
capacitor 104 Z30
470-860 mhz Power amplifier w
ATC-100B-3R0
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A114
Abstract: AN1955 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Text: Freescale Semiconductor Technical Data MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 MRF6S9130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130HR3/HSR3
MRFE6S9130HR3/HSR3.
PCN12895
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130HR3
MRF6S9130H
A114
AN1955
JESD22
MRF6S9130H
MRF6S9130HSR3
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NIPPON CAPACITORS
Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110
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MRF6S21190H
MRF6S21190HR3
MRF6S21190HSR3
MRF6S21190HR3
NIPPON CAPACITORS
p 150 54
465B
A114
A115
AN1955
JESD22
MRF6S21190H
MRF6S21190HSR3
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MRF6VP11KH
Abstract: J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 0, 1/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical
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MRF6VP11KH
MRF6VP11KHR6
MRF6VP11KH
J647
MRF6VP11KHR6
mosfet mttf
D6971
ptf561
A114
A115
AN1955
C101
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transistor j241
Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S9120N
MRF8S9120NR3
transistor j241
ATC100B2R7BT500XT
mrf8s9120
AN1955
ATC100B390J
ATC100B0R8BT500XT
j239 transistor
j353
J181
J239 mosfet transistor
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range
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MMRF1020--04N
MMRF1020-04NR3
MMRF1020-04GNR3
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MRF9030N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts
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MRF9030N
MRF9030NBR1
MRF9030N
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 5, 8/2008 MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130H
MRF6S9130HR3/HSR3
MRFE6S9130HR3/HSR3.
PCN12895
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130HR3
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