MRF6S21140HR3
Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF6S21140H
MRF6S21140HR3
MRF6S21140HSR3
MRF6S21140HSR3
AN1955
MRF6S21140H
D2080
Nippon capacitors
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303 2170 001
Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies
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MRF8S21200H
MRF8S21200HR6
MRF8S21200HSR6
MRF8S21200HR6
303 2170 001
ATC100B0R6BT500XT
J637
MRF8S21200HSR6
A114
A115
AN1955
JESD22
j453
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ATC 1084
Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage
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MW7IC18100N
MW7IC18100N
MW7IC18100NR1
MW7IC18100GNR1
MW7IC18100NBR1
ATC 1084
MA3531
A114
A115
AN1977
AN1987
JESD22
MW7IC18100NBR1
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mosfet j172
Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S9200N
MRF8S9200NR3
mosfet j172
GRM55DR61H106K
atc100b6r8
J263
J181
ATC100B1R2BT500XT
MRF8S9200N
MRF8S9200NR3
j139
ATC100B100JT500X
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage
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MW7IC2040N
MW7IC2040N
MW7IC2040NR1
MW7IC2040GNR1
MW7IC2040NBR1
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mrf5s19060nr1
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with
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MRF5S19060N
MRF5S19060NR1
MRF5S19060NBR1
MRF5S19060NR1
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Untitled
Abstract: No abstract text available
Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-
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MW7IC915N
MW7IC915N
MW7IC915NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with
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MRF8P9300H
MRF8P9300HR6
MRF8P9300HSR6
MRF8P9300HR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to
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MRF7S18170H
MRF7S18170HR3
MRF7S18170HSR3
MRF7S18170HR3
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C5750X7S2A106MT
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz
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MRF8S18210WHS
MRF8S18210WHSR3
MRF8S18210WGHSR3
from1805
MRF8S18210WHSR3
C5750X7S2A106MT
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to
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MRF7S19170H
MRF7S19170HR3
MRF7S19170HSR3
MRF7S19170HR3
DataMRF7S19170H
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S38010H Rev. 0, 8/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
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MRF7S38010H
MRF7S38010HR3
MRF7S38010HSR3
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NI-1230-4H
Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8P8300H
MRF8P8300HR6
MRF8P8300HSR6
NI-1230-4H
ATC100B2R1BT500XT
NI-1230-4S
MRF8P8300HS
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ATC100B390JT500XT
Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with
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MRF8P9300H
MRF8P9300HR6
MRF8P9300HSR6
92ficers,
MRF8P9300H
ATC100B390JT500XT
ATC100B200JT500XT
ATC100B200
ATC100B4R7CT500X
ATC100B100JT500X
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A113
Abstract: A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NB
Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with
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MRF5S19060N
MRF5S19060NR1
MRF5S19060NBR1
MRF5S19060NR1
A113
A114
A115
AN1955
C101
JESD22
MRF5S19060N
MRF5S19060NBR1
MRF5S19060NB
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transistor j241
Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S9120N
MRF8S9120NR3
transistor j241
ATC100B2R7BT500XT
mrf8s9120
AN1955
ATC100B390J
ATC100B0R8BT500XT
j239 transistor
j353
J181
J239 mosfet transistor
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range
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MMRF1020--04N
MMRF1020-04NR3
MMRF1020-04GNR3
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ATC600 capacitor
Abstract: MRF7S21170HS
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21170H
MRF7S21170HR3
MRF7S21170HSR3
ATC600 capacitor
MRF7S21170HS
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8S26120H
MRF8S26120HR3
MRF8S26120HSR3
MRF8S26120HR3
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wimax spectrum mask
Abstract: IRL 1530
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage
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MW7IC2750N
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
MW7IC2750N
wimax spectrum mask
IRL 1530
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HSR6
Abstract: IRL96 J637
Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 0, 10/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies
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MRF8S21200H
MRF8S21200HR6
MRF8S21200HSR6
MRF8S21200HSR6
MRF8S21200H
HSR6
IRL96
J637
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
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MRF7S35015HS
MRF7S35015HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8P8300H
MRF8P8300HR6
MRF8P8300HSR6
MRF8P8300HR6
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station
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MRF8S7170N
MRF8S7170NR3
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