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    369A-10

    Abstract: MJD32 MOTOROLA motorola MOSFET 935 NIPPON CAPACITORS mrf284 power MJD31 MJD32 MRF284 MRF284S B6C1
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		MRF284/D MRF284 MRF284S MRF284 DEVICEMRF284/D 369A-10 MJD32 MOTOROLA motorola MOSFET 935 NIPPON CAPACITORS mrf284 power MJD31 MJD32 MRF284S B6C1 PDF

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 PDF

    RM73B2B

    Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2 PDF

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 PDF

    465B

    Abstract: MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
    Text: MOTOROLA Order this document by MRF5S19150/D SEMICONDUCTOR TECHNICAL DATA MRF5S19150 RF Power Field Effect Transistors MRF5S19150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S19150S Designed for PCN and PCS base station applications at frequencies from


    Original     		MRF5S19150/D MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3 MRF5S19150 MRF5S19150R3 MRF5S19150S 465B MRF5S19150SR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		MRF284 MRF284LR1 MRF284LSR1 PDF

    mrf5s21090

    Abstract: No abstract text available
    Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 PDF

    MRF19085

    Abstract: CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 MRF19085R3 MRF19085SR3 100B5R1
    Text: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		MRF19085/D MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 MRF19085 MRF19085R3 MRF19085SR3 CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 100B5R1 PDF

    100B471JP200X

    Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-


    Original     		MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3 PDF

    100B201JT500XT

    Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		MRF284/D MRF284 MRF284SR1 DEVICEMRF284/D PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		MRF284 MRF284LR1 MRF284LSR1 MRF284 PDF

    Untitled

    Abstract: No abstract text available
    Text: , Una. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating


    Original     		MRF897R BD136 390-J TL1-TL11 UT-85-M17 GX-0300-55-22, PDF

    RM73B2B

    Abstract: MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3
    Text: MRF5S19130H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HSR3 PDF

    465B

    Abstract: AN1955 MRF5S19150 MRF5S19150H MRF5S19150HR3 MRF5S19150HSR3 D2426 J-54
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF5S19150H MRF5S19150HR3 MRF5S19150HSR3 465B AN1955 MRF5S19150 MRF5S19150H MRF5S19150HSR3 D2426 J-54 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21125R3 MRF21125SR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100H PDF

    NIPPON CAPACITORS

    Abstract: capacitor mttf 100B120JP 100B180JP
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP PDF

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    178 09T

    Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


    OCR Scan     		BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor PDF

    Transistor D 2494

    Abstract: fj series capacitor panasonic J103 transistor Panasonic FJ Series Capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F8 97 The RF Line N P N S ilic o n R F P o w e r T ra n s is to r Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating


    OCR Scan     		MRF897 Transistor D 2494 fj series capacitor panasonic J103 transistor Panasonic FJ Series Capacitor PDF