Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RM73B2 Search Results

    SF Impression Pixel

    RM73B2 Price and Stock

    KOA Speer Electronics Inc RM73B2BT121J

    Res Thick Film 1206 120 Ohm 5% 0.25W(1/4W) ±200ppm/°C Molded SMD Automotive Punched Paper T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com RM73B2BT121J 25,149
    • 1 $0.768
    • 10 $0.768
    • 100 $0.305
    • 1000 $0.1284
    • 10000 $0.1284
    		Buy Now

    MISC. RESISTORS RM73B2B511J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bisco Industries RM73B2B511J 245
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    MISC. RESISTORS RM73B2B623J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bisco Industries RM73B2B623J 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    KOA Speer Electronics Inc RM73B2AT1R6J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RM73B2AT1R6J 30,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    RM73B2AT1R6J 25,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    KOA Speer Electronics Inc RM73B2AT362J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RM73B2AT362J 19,151
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Component Electronics, Inc RM73B2AT362J 36,900
    • 1 $0.15
    • 10 $0.15
    • 100 $0.12
    • 1000 $0.1
    • 10000 $0.1
    		Buy Now
    Find more RM73B2 price and stock on Findchips.com

    RM73B2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RM73B2AT822 KOA Speer Electronics RES,THICK FILM,8.2KOHMS,150WV,2±% TOL,0805-CASE Scan PDF

    RM73B2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AGR09030GUM

    Abstract: JESD22-C101A RF35
    Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35

    eeprom programmer schematic 24c08

    Abstract: motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331
    Text: Preliminary ThunderSWITCH 8/3 Schematics Description and Schematics Reference Guide: SPWA023 Networking Business Unit Revision 0.2 April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or


    Original     		PDF SPWA023 1000PF DS0026-001 eeprom programmer schematic 24c08 motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331

    C1206C104KRAC7800

    Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW

    RM73B2B

    Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1

    Murata grm40

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915R2 MHVIC915R2 Murata grm40

    mrf5s21090

    Abstract: No abstract text available
    Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090

    100B471JP200X

    Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19100LR3 and MRF5S19100LSR3 replaced by MRF5S19100HR3 and MRF5S19100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line


    Original     		PDF MRF5S19100L/D MRF5S19100LR3 MRF5S19100LSR3 MRF5S19100HR3 MRF5S19100HSR3. MRF5S19100LR3 MRF5S19100LSR3

    TO272

    Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
    Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to


    Original     		PDF MWIC930/D MWIC930R1 MWIC930GR1 MWIC930 MWIC930R1 TO272 RM73B2BT A113 GRM42 MWIC930GR1 2XE3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S

    j340 motorola make

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make

    Untitled

    Abstract: No abstract text available
    Text: MRF5S19090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19090H MRF5S19090HR3 MRF5S19090HSR3

    ferroxcube for ferrite beads

    Abstract: MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads

    MRF19090

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF19090 Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and


    Original     		PDF MRF19090 MRF19090R3 MRF19090SR3

    RM73B2B

    Abstract: MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3
    Text: MRF5S19130H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HSR3

    MSRS1100T3

    Abstract: RM73Z2AT TSB41LV03 1394 schematic DVLynx SMD075 IEC61883 SLLA020 SLLS293 TSB12LV42
    Text: TSB12LV42/TSB41LV03 Reference Schematic Application Report May 1999 Mixed-Signal Products SLLA040A IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF TSB12L V42/TSB41L SLLA040A Mot68000 MSRS1100T3 RM73Z2AT TSB41LV03 1394 schematic DVLynx SMD075 IEC61883 SLLA020 SLLS293 TSB12LV42

    mosfet 1412

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 DS03-202RFPP mosfet 1412

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19100HR3 MRF5S19100HSR3

    RM73B2A-J

    Abstract: RK73H2B-F RM73B2B-J RK73H2A-F RM73B1J-J 22k resistor 200 watt RK73H1J-F RM73B1J
    Text: :< O à \ SURFACE MOUNT RESISTOR LAB KITS SPEER ELECTRONICS, IN C . TYPES RM73B2B-J 1206 Size, 1/4 watt, 5% RM73B2A-J 0805 Size, 1/8 watt, 5% RM73B1J-J 0603 Size, 1/10 watt, 5% VALUES PER KIT


    OCR Scan     		PDF RM73B2B-J RM73B2A-J RM73B1J-J RK73H2B-F RK73H2A-F 22k resistor 200 watt RK73H1J-F RM73B1J

    RM73B1J

    Abstract: 104021
    Text: KOA FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 Watt to 1 Watt Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available


    OCR Scan     		PDF 504bD87 00D1721 RM73B1J 104021

    Untitled

    Abstract: No abstract text available
    Text: KOA FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 Watt to 1 Watt Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available


    OCR Scan     		PDF 504bD87 00D1721

    Untitled

    Abstract: No abstract text available
    Text: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available


    OCR Scan     		PDF 120/yin/3 D17E1