mosfet 1412
Abstract: No abstract text available
Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
|
Original
|
PDF
|
AGR09090EF
Hz--960
DS03-202RFPP
mosfet 1412
|
100B100JW500X
Abstract: AGR09090EF JESD22-C101A
Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
|
Original
|
PDF
|
AGR09090EF
Hz--960
AGR09090EF
DS04-058RFPP
DS04-029RFPP)
100B100JW500X
JESD22-C101A
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
|
Original
|
PDF
|
AGR09090EF
Hz--960
DS04-134RFPP
DS04-068RFPP)
|
Johanson Technology
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
|
Original
|
PDF
|
AGR09090EF
Hz--960
DS04-029RFPP
DS04-005RFPP)
Johanson Technology
|
AGR09090EF
Abstract: JESD22-C101A ZX18 grm40x7r103k100al
Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
|
Original
|
PDF
|
AGR09090EF
Hz--960
AGR09090EF
DS04-153RFPP
DS04-134RFPP)
JESD22-C101A
ZX18
grm40x7r103k100al
|
100B100JW500X
Abstract: No abstract text available
Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
|
Original
|
PDF
|
AGR09090EF
Hz--960
Hz--895
DS04-134RFPP
DS04-068RFPP)
100B100JW500X
|
100B120JW500X
Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X
Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
|
Original
|
PDF
|
AGR09090EF
Hz--960
DS04-068RFPP
DS04-064RFPP)
100B120JW500X
grm40x7r103k100al
100B470JW500X
100B100JW500X
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
|
Original
|
PDF
|
AGR09090EF
Hz--960
Hz--895
Therma10-12,
DS04-064RFPP
DS04-058RFPP)
|
j0947
Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X
Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
|
Original
|
PDF
|
AGR09090EF
Hz--960
AGR09090EF
Typic14
Hz--895
j0947
JESD22-C101A
ZX18
ZO 109 wa
100B100JW500X
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet October 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
|
Original
|
PDF
|
AGR09090EF
Hz--960
T210-12,
DS04-005RFPP
DS03-202RFPP)
|
AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
|
Original
|
PDF
|
CA03-005RFPP-7
CA03-005RFPP-6)
AGRA10EM
APP550
APP550TM
AGR09085EF
APP550TM and APP530TM
400-kHz
agra 30
TAAD08JU2
AGR09030EF
AGR09030GUM
|