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    TURCK Inc RU130U-M30M-2UP8X2-H1151

    Ult |Turck RU130U-M30M-2UP8X2-H1151
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    TURCK Inc RU130U-M30E-2UP8X2T-H1151

    Ult |Turck RU130U-M30E-2UP8X2T-H1151
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    TURCK Inc RU130U-M18E-2UP8X2T-H1151

    Ult |Turck RU130U-M18E-2UP8X2T-H1151
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    TURCK Inc RU130U-M18E-LIU2PN8X2T-H1151

    Ult |Turck RU130U-M18E-LIU2PN8X2T-H1151
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    TURCK Inc RU130U-M30M-2UP8X2-H1151 (ALTERNATE: M1610034)

    Sensor, Ultrasonic, M30 Housing, 130cm Range, 15-30VDC, PNP, M12, M1610034 | Turck RU130U-M30M-2UP8X2-H1151
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    RS RU130U-M30M-2UP8X2-H1151 (ALTERNATE: M1610034) Bulk 20 Weeks 1
    • 1 $478.8
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    130UM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OPB0604

    Abstract: 839 transistor
    Text: Silicon Photo Transistor OPB0604 1. Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um : Emitter Electrode : Base Electrode


    Original     		PDF OPB0604 130um 000lux 2856K. 500uA RL-1000 OPB0604 839 transistor

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm


    Original     		PDF OPB1104 130um 500uA

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0604 1. Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um : Emitter Electrode : Base Electrode


    Original     		PDF OPB0604 130um 000lux 2856K. RL-1000

    OPB1104

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm


    Original     		PDF OPB1104 130um 500uA OPB1104

    Crystal 32 MHz 12 pF

    Abstract: No abstract text available
    Text: PL610-6x 1.8V to 3.3V XO IC’s for 312.5kHz to 60MHz, with Standby FEATURES DESCRIPTION • Single IC to cover up to 60MHz output frequency.  Direct oscillation operation  Input Frequency: Fundamental crystal: o 10MHz to 60MHz  Output Frequency: LVCMOS


    Original     		PDF PL610-6x 60MHz, 60MHz 10MHz 60MHz 40MHz PL610-6x 25kHz 60MHz. Crystal 32 MHz 12 pF

    marking xt 12

    Abstract: MTC1
    Text: 1.8V to 3.3V XO IC’s for 156.25kHz to 60MHz, with Standby FEATURES DESCRIPTION • Single IC to cover up to 60MHz output frequency.  Direct oscillation operation  Input Frequency: Fundamental crystal: o 5MHz to 60MHz  Output Frequency: LVCMOS o 156.25kHz to 60MHz 2.5V & 3.3V


    Original     		PDF 25kHz 60MHz, 60MHz 60MHz 40MHz PL610-6x marking xt 12 MTC1

    Untitled

    Abstract: No abstract text available
    Text: ED-016IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to si detector • High power • Low forward voltage • Remote Controller • Pperipheral Device • Photocoupler • Photointerrupter


    Original     		PDF ED-016IRA 130um 370um 280um 385um 385um

    880nm

    Abstract: No abstract text available
    Text: ED-216IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : •N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 385 370 n-Electrode n-AlGaAs epi layer 385 n-Electrode 130 255 p-AlGaAs epi layer Emission area p-Electrode


    Original     		PDF ED-216IR 130um 370um 255um 385um 385um 880nm

    Untitled

    Abstract: No abstract text available
    Text: NJU6221 Series PRELIMINARY 1.8V Operating Voltage Fundamental Quartz Crystal Oscillator IC with Input Tolerant Function !GENERAL DESCRIPTION The NJU6221 series is a C-MOS quartz crystal oscillator IC realized excellent frequency stability for fundamental up to


    Original     		PDF NJU6221 60MHz) f0/16, f0/32 f0/64 63VDD

    OPA8535HN

    Abstract: No abstract text available
    Text: OPA8535HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol


    Original     		PDF OPA8535HN --------------------130um OPA8535HN

    OPA8732HP

    Abstract: No abstract text available
    Text: OPA8732HP F Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs (N Type) Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage


    Original     		PDF OPA8732HP --------------------130um

    OPA6611

    Abstract: No abstract text available
    Text: OPA6611 Red LED Chip N Side-Up GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage Typ Unit


    Original     		PDF OPA6611 10mil 10mil 12mil 12mil 130um 11mil OPA6611

    OPA9447

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9447 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage


    Original     		PDF OPA9447 100mA 130um --------------------------11milx --------------------------11mil OPA9447

    OPA9448

    Abstract: 110MIL
    Text: Infrared LED Chip OPA9448 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage


    Original     		PDF OPA9448 100mA 130um --------------------------11mix --------------------------11mil OPA9448 110MIL

    OPA8512HP

    Abstract: No abstract text available
    Text: OPA8512HP Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage


    Original     		PDF OPA8512HP --------------------130um OPA8512HP

    OPA9433LT

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9433LT GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min VF(1) Forward Voltage VF(2) Reverse Voltage


    Original     		PDF OPA9433LT 100mA --------------------130um OPA9433LT

    OPA9437EU

    Abstract: Au Sn eutectic
    Text: Infrared LED Chip OPA9437EU GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF


    Original     		PDF OPA9437EU 100mA 14mil 15mil 130um 14mil OPA9437EU Au Sn eutectic

    OPA9443

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9443 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Typ Max Unit


    Original     		PDF OPA9443 100mA 130um --------------------------11mil OPA9443

    48MLP

    Abstract: 48-LQFP-0707 H bridge driver sg FAN8702 FAN8702B FAN8702MP FAN8702MPX mobile phone camera 2 channel h-bridge motor driver "DC Drive" motor control IRIS
    Text: www.fairchildsemi.com FAN8702/FAN8702B/FAN8702MP 6 Channel DSC Motor Driver Features Description • • • • • • • • • • The FAN8702 is designed for portable equipment such as DSC and mobile phone camera. It consists of 2 constant current and 4 constant voltage drive blocks suitable for shutter, auto-focus, iris and zoom motor drive.


    Original     		PDF FAN8702/FAN8702B/FAN8702MP FAN8702 600mA 48-LQFP-0707 48MLP7X7 48MLP 48-LQFP-0707 H bridge driver sg FAN8702B FAN8702MP FAN8702MPX mobile phone camera 2 channel h-bridge motor driver "DC Drive" motor control IRIS

    Untitled

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9433 GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage


    Original     		PDF OPA9433 100mA 130um --------------------11mil

    5053

    Abstract: No abstract text available
    Text: 5053 series Crystal Oscillator Module ICs OVERVIEW The 5053 series are miniature crystal oscillator module ICs supported 80MHz to 170MHz fundamental oscillation mode. The Oscillator circuit stage has voltage regulator drive, significantly reducing current consumption and crystal current, compared with


    Original     		PDF 80MHz 170MHz ND13016-E-01 5053

    Untitled

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9425AL GaAs/GaAs 1. Material Substrate GaAs Epitaxial Layer GaAs 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Aluminum Alloy (N Type) (P/N Type) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF VR Reverse Voltage


    Original     		PDF OPA9425AL 10mil 130um 10mil

    Untitled

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9428M GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage


    Original     		PDF OPA9428M 100mA 130um --------------------------11m --------------------------11mil

    Untitled

    Abstract: No abstract text available
    Text: OPA8930HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol


    Original     		PDF OPA8930HN --------------------130um