OPA9448
Abstract: 110MIL
Text: Infrared LED Chip OPA9448 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
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Original
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PDF
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OPA9448
100mA
130um
--------------------------11mix
--------------------------11mil
OPA9448
110MIL
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OPA9448M
Abstract: OPA9448
Text: Infrared LED Chip OPA9448M GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
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Original
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PDF
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OPA9448M
100mA
130um
--------------------------11mil
OPA9448M
OPA9448
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Untitled
Abstract: No abstract text available
Text: Infrared LED Chip OPA9448M GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
|
Original
|
PDF
|
OPA9448M
100mA
130um
--------------------------11minm
--------------------------11mil
|
Untitled
Abstract: No abstract text available
Text: Infrared LED Chip OPA9448 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
|
Original
|
PDF
|
OPA9448
100mA
130um
--------------------------11mil
|