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    1341 TRANSISTOR Search Results

    1341 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1341 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,


    Original     		PDF

    HCD66750SBP

    Abstract: HD66750S 0750H 7 segment HS 1106 BS Hitachi DSA002732 HD66750STB0
    Text: Preliminary HD66750S 128 x 128-dot Graphics LCD Controller/Driver with Four-grayscale Functions Rev 0.2 January, 2001 Description The HD66750S, dot-matrix graphics LCD controller and driver LSI, displays 128-by-128-dot graphics for four monochrome grayscales. Since the HD66750S incorporates bit-operation functions and a 16-bit


    Original     		HD66750S 128-dot HD66750S, 128-by-128-dot HD66750S 16-bit HCD66750SBP 0750H 7 segment HS 1106 BS Hitachi DSA002732 HD66750STB0 PDF

    7 segment HS 1106 BS

    Abstract: Seg88 hd66750s WM9 datasheet HD66750STB0 HCD66750BP HD66724 HD66725 HD66726 HWD66750SBP
    Text: Preliminary HD66750S 128 x 128-dot Graphics LCD Controller/Driver with Four-grayscale Functions Rev 0.1 November 2000 Description The HD66750S, dot-matrix graphics LCD controller and driver LSI, displays 128-by-128-dot graphics for four monochrome grayscales. Since the HD66750S incorporates bit-operation functions and a 16-bit


    Original     		HD66750S 128-dot HD66750S, 128-by-128-dot HD66750S 16-bit 7 segment HS 1106 BS Seg88 WM9 datasheet HD66750STB0 HCD66750BP HD66724 HD66725 HD66726 HWD66750SBP PDF

    1500W Power Amplifier PCB Layout

    Abstract: smd transistor SRS transisTOR C123 transistor c124 ic q110 AC Transformer 50A 100V inductance c124 transistor U108 pa-1650 pa1650
    Text: ISL6752EVAL1Z Evaluation Board with Synchronous Rectifiers Application Note September 13, 2007 AN1341.0 Author: Richard Garcia Introduction The ISL6752EVAL1Z board utilizes Intersil’s zero voltage switching ZVS topology. In addition to the ZVS function,


    Original     		ISL6752EVAL1Z AN1341 CR107 CR106 VR102 1500W Power Amplifier PCB Layout smd transistor SRS transisTOR C123 transistor c124 ic q110 AC Transformer 50A 100V inductance c124 transistor U108 pa-1650 pa1650 PDF

    2N5777 equivalent

    Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 equivalent transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent color sensitive PHOTO TRANSISTOR PDF

    L14F1 npn photo transistor

    Abstract: transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1 PDF

    Phototransistor L14G3 application

    Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
    Text: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 Phototransistor L14G3 application L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777 PDF

    L14H2

    Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14H2 L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3 PDF

    2N5777

    Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3 PDF

    PHOTO DIODE LED55C

    Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 PHOTO DIODE LED55C ssl55c photo transistor L14F1 ssl55b SSL55CF Direct replacement for ssl55c PDF

    2n5777 phototransistor

    Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2n5777 phototransistor L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2 PDF

    ssl55c

    Abstract: photo transistor 2n5777 2N5779 PHOTO DIODE LED55C LED56F L14F1 LED56 LED55C H74A1 LED55B
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 ssl55c photo transistor 2n5777 2N5779 PHOTO DIODE LED55C L14F1 H74A1 PDF

    H15A1

    Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 H15A1 H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 L14F2 PDF

    L14F1 npn photo transistor

    Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25 PDF

    L14F1 PHOTOTRANSISTOR

    Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 PHOTOTRANSISTOR 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1 PDF

    9033 transistor

    Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
    Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431


    OCR Scan     		302N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 9033 transistor PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811 PDF

    2N5779

    Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5779 L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327 PDF

    photo transistor 2n5777

    Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 photo transistor 2n5777 L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1 PDF

    MRF245

    Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
    Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1


    OCR Scan     		CB-403) CB-410) CB-303) CB-4111 CB-306) CB-407) 1CB-404) CB-408) CB-409) 52N6082 MRF245 PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94 PDF

    opto isolator 4n35

    Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 opto isolator 4n35 GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 L14G1 phototransistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PMBT5550 _ / v _ SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT-23 package. Q UICK REFERENCE D A T A Collector-base voltage open emitter


    OCR Scan     		PMBT5550 OT-23 OT-23. PDF

    BDT88F

    Abstract: 36 TI BBL BDT86
    Text: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5bE » • 711üfl2b D D M 3 3 2 Q 72S ■ PH IN T— SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BDT81F, BDT83F, BD T85F and BDT87F.


    OCR Scan     		BDT82F; BDT84F BDT86F; BDT88F OT186 BDT81F, BDT83F, BDT87F. BDT82F OT186. BDT88F 36 TI BBL BDT86 PDF

    1117 S 3,3 Transistor

    Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
    Text: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .


    OCR Scan     		TA75W 1117 S 3,3 Transistor Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345 PDF

    SD1076

    Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510
    Text: 2 - 30 MHz linear SSB applications applications linéaires BLU TYPE PACKAGE CONFIG. THOMSON-CSF V CC V Pout (PEP) Pin fo (W) (W) (MHz) Gp min (dB) IMD max (dB) 4LFL 4LFL 4LFL 4LFL CE CE CE CE 12,5 12,5 12,5 12,5 > > > > 20 50 75 100 30 30 30 30 0,63 1,6


    OCR Scan     		BAM20 2N5642 B25-12 2N60822N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1076 MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510 PDF