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    H74A1 Search Results

    H74A1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H74A1 General Electric Semiconductor Data Handbook 1977 Scan PDF
    H74A1 General Electric Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-transistor. TTL interface. Scan PDF

    H74A1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


    Original     		TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note PDF

    H11f1 variable resistor 500k

    Abstract: H11F1 300 H11F1300W h11f1 application H11F1
    Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free


    Original     		H11F1 H11F2 H11F3 E90700, P01101067 H11F1300 H11F1300W H11F13S H11F13SD H11f1 variable resistor 500k H11F1 300 h11f1 application PDF

    H11F3

    Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
    Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free


    Original     		H11F1 H11F2 H11F3 P01101067 H11F3 H11F3300 H11F3300W H11F33S H11F33SD H11F3S H11f1 variable resistor 500k an 7511 500k variable resistor PDF

    H11f1 variable resistor 500k

    Abstract: H11F1 variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F2 H11F 5v 10mA reed relay data sheet book h11f1 pin
    Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free


    Original     		H11F1 H11F2 H11F3 H11f1 variable resistor 500k variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F 5v 10mA reed relay data sheet book h11f1 pin PDF

    H11F1

    Abstract: H11f1 variable resistor 500k H74A1 H11F H11F2 H11F3 bv46
    Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free


    Original     		H11F1 H11F2 H11F3 H11f1 variable resistor 500k H74A1 H11F H11F3 bv46 PDF

    photo transistor til 78

    Abstract: 74S00 74H00 H74A1 transistor cross ref 74H00 TTL TTL 74H00
    Text: f G E SOLID STATE 01 DE § 3S7S0fll 001^755 fl | Optoelectronic Specification*. T-V/-S3 Photon Coupled Isolator H74A1 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor TTL Interface T he G E Solid State H74A1 provides logic to logic optical interfacing of TT L gates with


    OCR Scan     		H74A1 H74A1 74H00 74S00 500VDc) photo transistor til 78 transistor cross ref 74H00 TTL TTL 74H00 PDF

    mq-7

    Abstract: No abstract text available
    Text: ÛUALITY TECHNOLOGIES CORP 57E T> 74tbfiSl 0004 n 2 ¿so MQ7 Y Optoisolator Specifications_ H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H74A1 provides logic-to-logic optical in terfacin g o f T T L gates


    OCR Scan     		H74A1 74tbfiSl H74A1 74S00 500VDC) mq-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID 01E STATE D 19722 Optoelectronic Specifications_ HA R R I S S E M I C O N » SECTOR 37E D I T-V/-Ï 3 43G2571 0027104 0 • H A S Photon Coupled Isolator H74A1 G a A s In fr a r e d E m ittin g D io d e & N P N S ilic o n P h o to -T ra n s is to r


    OCR Scan     		43G2571 H74A1 H74A1 74H00 74S00 92CS-42662 92CS-429S1 PDF

    Opto-isolator

    Abstract: No abstract text available
    Text: Optoisolator Specifications H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H 74A 1 p ro v id e s log ic-to -lo g ic o p tic a l in te rf a c in g o f T T L ga te s w ith g uaranteed lev el c o m p a tib ility in p ra c tic al specified circuits. T h e


    OCR Scan     		H74A1 74S00 Opto-isolator PDF

    7400 logic gate ic

    Abstract: IC TTL 7400 4S00
    Text: Optoisolator Specifications H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H74A 1 provides logic-to-logic optical in terfa cin g o f T T L gates w ith guaranteed lev el com patibility in practical specified circuits. T h e


    OCR Scan     		H74A1 H74A1 7400 logic gate ic IC TTL 7400 4S00 PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    L14F1 PHOTOTRANSISTOR

    Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 PHOTOTRANSISTOR 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    mcp3021z

    Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler
    Text: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other


    OCR Scan     		LP666J LP721 TLP721F LP731 TLP732 PC918 PC702V PC714V mcp3021z P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler PDF

    MOC5010

    Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
    Text: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t


    OCR Scan     		1N6264 1N6265 1N6266 4N25A 4N29A 4N32A 4N38A L14C2 MOC5010 MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143 PDF

    2N5777

    Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3 PDF

    PHOTO DIODE LED55C

    Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 PHOTO DIODE LED55C ssl55c photo transistor L14F1 ssl55b SSL55CF Direct replacement for ssl55c PDF

    TIL145

    Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
    Text: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t


    OCR Scan     		1N6264 1N6265 1N6266 H21A1 H21B1 H22A2 TIL145 ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A PDF

    2N5779

    Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5779 L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327 PDF

    photo transistor 2n5777

    Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 photo transistor 2n5777 L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1 PDF

    TLP181 equivalent

    Abstract: NEC ps2401 TLP3022 equivalent TLP541G "cross-reference" s13md1 sharp TLP3061 equivalent TLP560J "cross-reference" PC357 "cross-reference" TLP734 equivalent pc716 sharp
    Text: 10. Cross Reference Code Definitions A : D irect R eplacem ent B : M inor Electrical Difference C : M inor M echanical Difference D : M ajo r Electrical Difference E : M ajo r M echanical D ifference F : Call T O S H IB A * G : No Equivalent The fo llo w in g Cross-Reference is m eant to


    OCR Scan     		SIEMEN27 PC4N28 PC4N29 PC4N30 PC4N32 PC4N33 PC4N35 PC4N36 PC4N37 PC110 TLP181 equivalent NEC ps2401 TLP3022 equivalent TLP541G "cross-reference" s13md1 sharp TLP3061 equivalent TLP560J "cross-reference" PC357 "cross-reference" TLP734 equivalent pc716 sharp PDF

    Triac SC141D

    Abstract: Opto triac ot 195 schematic diagram inverter 2000w schematic diagram power inverter 1500w 12v 1200W DC POWER SUPPLY SCHEMATIC scr 106d st4 diac solar tracking street light system schematic diagram of 2000W induction heater 400W sine wave inverter circuit diagram
    Text: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , Q.3A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 1 BOA COLD


    OCR Scan     		PDF

    opto isolator 4n35

    Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 opto isolator 4n35 GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 L14G1 phototransistor PDF

    2n5777 phototransistor

    Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2n5777 phototransistor L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2 PDF