13MM
Abstract: transistor Common Base configuration capacitor 50 uf Rogers 6010.5
Text: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry
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PH2931
PH2931-135s
13MM
transistor Common Base configuration
capacitor 50 uf
Rogers 6010.5
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Astec Semiconductor
Abstract: AEQ75Y48
Text: Astec Industry Standard 75 Amps AEQ75Y48 Total Power: Input Voltages: No. of Outputs: 135W 48V Single High Efficiency Quarter Brick Electrical Specs Input Input Range Input Surge Efficiency 36 to 75 VDC 100V /100ms 89% typical Output Output Current Line/Load Regulation
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AEQ75Y48
/100ms
2002/95/EC
REV02:
Astec Semiconductor
AEQ75Y48
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135w
Abstract: Q62702-C2287 MARKING WjS
Text: BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=47KΩ Type Marking Ordering Code Pin Configuration BCR 135W WJs 1=B Q62702-C2287 Package 2=E 3=C SOT-323
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Q62702-C2287
OT-323
Nov-26-1996
135w
Q62702-C2287
MARKING WjS
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2SK3270-01
Abstract: No abstract text available
Text: 2SK3270-01 N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters
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2SK3270-01
2SK3270-01
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AEQ75Y48
Abstract: REV01
Text: Astec Industry Standard 75 Amps AEQ75Y48 Total Power: Input Voltages: No. of Outputs: 135W 48V Single High Efficiency Quarter Brick Electrical Specs Input Input Range Input Surge Efficiency 36 to 75 VDC 100V /100ms 89% typical Output Output Current Line/Load Regulation
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PDF
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AEQ75Y48
/100ms
REV01:
AEQ75Y48
REV01
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VSO05561
Abstract: No abstract text available
Text: BCR 135W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R 2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 135W WJs Pin Configuration 1=B 2=E Package
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VSO05561
EHA07184
OT-323
Oct-22-1999
VSO05561
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RF NPN POWER TRANSISTOR 3 GHZ
Abstract: PH2931-135S
Text: PH2931-135S Radar Pulsed Power Transistor 135W, 2.9-3.1 GHz, 20µs Pulse, 1% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH2931-135S
RF NPN POWER TRANSISTOR 3 GHZ
PH2931-135S
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Untitled
Abstract: No abstract text available
Text: Medical Medical Adapter 15W 25W 30W 65W 85W 90W 105W 135W 150W 180W 220W 400W 5V 9V 12V 15V 18V 19V 20V 24V 28V 30V 32V 36V 48V Available or in develpment FSP015 Series Wall Mount Model Watts Output Voltage Output Current Efficiency AC Socket Dimension(mm)
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FSP015
FSP015-RAMM
FSP015-REMM
FSP015-RBMM
FSP015-RCMM
FSP015-RDMM
FSP015-RFMM
160watts.
FSP700-90MPB
180watts.
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2SK3272-01L
Abstract: No abstract text available
Text: 2SK3272-01L,S N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier
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2SK3272-01L
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Untitled
Abstract: No abstract text available
Text: 2SK3272-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier
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2SK3272-01MR
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mosfet 4800
Abstract: MOSFET 100V 2SK3216-01 power mosfet 200A diode k 1140
Text: 2SK3216-01 N-channel MOS-FET 100V > Features - 25mΩ ±200A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters
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2SK3216-01
mosfet 4800
MOSFET 100V
2SK3216-01
power mosfet 200A
diode k 1140
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2SK3272-01L
Abstract: 613 MOSFET
Text: 2SK3272-01L,S N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier
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2SK3272-01L
613 MOSFET
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13MM
Abstract: No abstract text available
Text: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry
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Original
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PDF
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PH2931
13MM
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2SK3270-01
Abstract: No abstract text available
Text: 2SK3270-01 N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters
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2SK3270-01
2SK3270-01
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CH2507S
Abstract: lm3931 FBJ3216HS800 MAX1999 QUANTA SSM14 imz2 lm3932 LM393-1 LM393 SOP8
Text: 5 4 ADP IN 135W D 3 VA_ADP BEAD 2 1 VA_DOCK MOS FOR N.B. VA MAX: 150W N-MOS DIODE CONN. D ADP IN (150W) VA_ADP 3V(4A) & 5V(5A) CONN. SUSON ISOLATE RC DELY SYSTEM'S VA SUSON_PR MOS S0 C V +2.5V V 3VPCU V V +3VSUS V V +3V V 5VPCU V V +5VSUS V V +5V V BUS_PWR
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MAX1999
127178MA060GX10ZR-60P-LUV
RE110X181
RE110X181
H-C197D118P2
CH2507S
lm3931
FBJ3216HS800
MAX1999
QUANTA
SSM14
imz2
lm3932
LM393-1
LM393 SOP8
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613 MOSFET
Abstract: No abstract text available
Text: 2SK3270-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier
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2SK3270-01MR
613 MOSFET
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2SK3218-01
Abstract: MOSFET 150V
Text: 2SK3218-01 N-channel MOS-FET 150V > Features - 43mΩ ±160A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters
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2SK3218-01
2SK3218-01
MOSFET 150V
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LM3886 circuit diagram
Abstract: LM3886 lm3886 application note SNAS091B why we use heat sink compound LM3886 Overture Audio Power Amplifier Series lm3886 output circuit LM388
Text: LM3886 LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute Literature Number: SNAS091B LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier
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LM3886
LM3886
SNAS091B
20kHz.
LM3886,
LM3886 circuit diagram
lm3886 application note
SNAS091B
why we use heat sink compound
LM3886 Overture Audio Power Amplifier Series
lm3886 output circuit
LM388
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Untitled
Abstract: No abstract text available
Text: 2SK3271-01 N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±100A 155W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier
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2SK3271-01
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12V DC to 3 Phase 36V AC INVERTERS
Abstract: 8000w inverter CXA-0384 PAF600F280-28 CXA-L0605-VJL CXA-P1212C-WJL power supply 2000w 24V 50A ipb48004 electronic transformer halogen 12v CXA-0231
Text: P o w e r P r o d u c t s TDK Corporation of America 1221 Business Center Drive, Mount Prospect, IL 60056 Phone: +1 847 803-6100 Fax: +1 (847) 803-1125 Email: POWER@tdktca.com Visit our website: www.tdk.com O v e r v i e w P o w e r P r o d u c t s O v e r v i e w
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ IO k fi, R2=47Ki2 _E L ÜJ Type Marking Ordering Code BCR 135W WJs n r Pin Configuration Q62702-C2287 1= B Package
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OCR Scan
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PDF
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47Ki2)
Q62702-C2287
OT-323
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=10k£2, R2=47K£i Marking Ordering Code Pin Configuration BCR 135W WJs Q62702-C2287 1 =B Package LU II OJ Type
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OCR Scan
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PDF
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Q62702-C2287
OT-323
E3Sb05
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Untitled
Abstract: No abstract text available
Text: an A M P company Radar Pulsed Power Transistor, 135W, 20jis Pulse, 1% Duty 2.9 - 3.1 GHz PH2931 -135S • • • • • • • • V2.00 suo üfe Features NPN Silicon P ow er T ran sisto r C o m m o n Base C onfiguration B ro a d b an d Class C O p e ra tio n
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20jis
PH2931
-135S
TT50M50A
ATC100A
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BDP 284
Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
Q62702-A829
Q62702-A859
Q62702-A950
Q62702-A952
Q62702-A608
Q62702-A718
Q62702-A687
BDP 284
BAV 217
Q62702-C2259
BAT 545
Q62702F1240
Q62702-A773
bdp 497
Q62702-C944
Q62702-D339
Q62702-C1529
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