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Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1200 25 1.3 0.48 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 13H4501 Doc. No. 5SYA1104-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link
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13H4501
5SYA1104-02
CH-5600
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Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1200 25x103 1.3 0.48 2800 V A A V mΩ V Fast Recovery Diode 5SDF 13H4501 Doc. No. 5SYA1104-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO
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13H4501
5SYA1104-02
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1200 25 1.3 0.48 2800 V A kA V Fast Recovery Diode 5SDF 13H4501 mΩ V Doc. No. 5SYA 1104-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link
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13H4501
CH-5600
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Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 1200 IFRMS = 1900 IFSM = 25 VF0 = 1.30 rF = 0.48 VDClink = 2800 V A A kA V Fast Recovery Diode 5SDF 13H4501 mΩ V Doc. No. 5SYA 1104-02 July 98 •Patented free-floating silicon technology •Low on-state and switching losses
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13H4501
CH-5600
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GTO thyristor Curve properties
Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by
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30J4502
35L4502
GTO thyristor Curve properties
ABB 5SGY 35L4502
ABB 5SGy
GTO thyristor ABB
snubber IGCT
ABB GTO gate unit
gto dc converter abb
GTO thyristor driver
igct abb
diode DS1
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5SDF01R2501
Abstract: 5SGA 5SGA30J2501 RTK 031
Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes
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01R2501
05D2501
05D2501
15F2502
20H2501
25H2501
30J2501
20H4502
11F2501
03D4501
5SDF01R2501
5SGA
5SGA30J2501
RTK 031
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ABB GTO
Abstract: stud type diodes fjs 500
Text: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.
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05D2501
11F2S01
45x100
ABB GTO
stud type diodes
fjs 500
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ABB 5SGA
Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s
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15F2502
15F2502
05D2501
01R2501
20H2501
05D2501
11F2501
25H2501
ABB 5SGA
2sh25
GTO ABB
GTO gate drive unit
2SH2501
TJM 10
5sga 20h2501
ABB GTO
R2501
5SGA 15F2502
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FSV 052
Abstract: No abstract text available
Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.
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05D2505
11F2501
07F4501
13H4501
5SDF14H4505
10H6004
01R2501
01R2502
01R2503
01R2504
FSV 052
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