EIA-364-20
Abstract: EIA36420 EIA-364-29 EIA-364-55 test method 4 EIA-364-8 AMP Faston flag connector EIA-364-23 terminal
Text: 108-2215 Product Specification 13May05 Rev A FASTON* .187 Ultra-Pod Flag Receptacle Assembly 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the FASTON* .187 Ultra-Pod Flag Receptacle Assembly. 1.2. Qualification
|
Original
|
PDF
|
13May05
23Nov04.
EIA-364-20
EIA36420
EIA-364-29
EIA-364-55 test method 4
EIA-364-8
AMP Faston flag connector
EIA-364-23 terminal
|
S9013LT1
Abstract: No abstract text available
Text: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 O ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
|
Original
|
PDF
|
S9013LT1
OT-23
S9013LT1
13-May-05
50mAdc)
|
U1001
Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010
|
Original
|
PDF
|
U1001
13-May-05
MIL-STD-883
U1001
84-1LMI
XP1005
XU1001
circuit diagram of 4 channel 315 rf transmitter
|
n-channel mosfet SOT-23 3a
Abstract: WTC2306 g2ns
Text: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V *Rugged and Reliable *Capable of 2.5V Gate Drive
|
Original
|
PDF
|
WTC2306
OT-23
OT-23
Curre1000
13-May-05
n-channel mosfet SOT-23 3a
WTC2306
g2ns
|
U1000
Abstract: XB1004 XU1000
Text: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing
|
Original
|
PDF
|
U1000
13-May-05
MIL-STD-883
U1000
XB1004
XU1000
|
Untitled
Abstract: No abstract text available
Text: TFDU2201 Vishay Semiconductors Low Profile Transceiver Module PIN Photodiode and Infrared Emitter Description The miniaturized TFDU2201 is an ideal PIN photodiode transmitter combination in a unique package for applications in telecommunications like mobile
|
Original
|
PDF
|
TFDU2201
TFDU2201
08-Apr-05
|
BLH load cell
Abstract: weighing scale
Text: Model U3SB-A Vishay BLH Nickel Plated Steel S-Type Load Cells FEATURES • Capacitiy range: 50 to 20K lb 22.7 to 9K kg • Designed for single or multiple load cell applications • Nickel-plated, alloy steel construction • Integral 20-foot cable for maximum mounting flexibility
|
Original
|
PDF
|
20-foot
08-Apr-05
BLH load cell
weighing scale
|
CDR33BX
Abstract: CDR34BP CDR31BX CDR03BX
Text: CDR-MIL-PRF-55681 Vishay Vitramon Multilayer Ceramic Chip Capacitors, Qualified, Type CDR FEATURES • Military qualified products. • High reliability tested per MIL-PRF-55681. • Lead Pb -free applied for “Y” and “M” termination code. GENERAL SPECIFICATIONS
|
Original
|
PDF
|
CDR-MIL-PRF-55681
MIL-PRF-55681.
CDR01,
CDR31,
CDR32
CDR33
CDR02,
CDR03,
CDR04,
CDR06,
CDR33BX
CDR34BP
CDR31BX
CDR03BX
|
Untitled
Abstract: No abstract text available
Text: 18.0-34.0 GHz GaAs MMIC Receiver R1002 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental High Dynamic Range Receiver Integrated Gain Control +4.0 dBm Input Third Order Intercept IIP3 14.0 dB Conversion Gain 3.0 dB Noise Figure 25.0 dB Image Rejection
|
Original
|
PDF
|
R1002
13-May-05
MIL-STD-883
|
WSD1045CT
Abstract: No abstract text available
Text: WSD1030CT thur WSD1045CT D-PAK * “G” Lead Pb -Free REVERSE VOLTAGE 30 TO 45 VOLTS FORWARD CURRENT 10 AMPERE *For Surface Mount Application *Metal-Semiconductor Junction With Guardring *Epitaxial Construction *Low Forward Voltage Drop *High Current Capability
|
Original
|
PDF
|
WSD1030CT
WSD1045CT
O-252)
D1030CT-D1045CT
O-252
13-May-05
WSD1045CT
|
Untitled
Abstract: No abstract text available
Text: S9013LT1 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 O E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
|
Original
|
PDF
|
S9013LT1
OT-23
S9013LT1
13-May-05
50mAdc)
SMAL20uA
|
transistor R1001
Abstract: R1001 18E DBM receiver mmic 84-1LMI XR1001
Text: 33.0-40.0 GHz GaAs MMIC Receiver R1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Receiver 9.0 dB Conversion Gain 4.0 dB Noise Figure 12.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883
|
Original
|
PDF
|
R1001
13-May-05
MIL-STD-883
transistor R1001
R1001
18E DBM
receiver mmic
84-1LMI
XR1001
|
transistor r1004
Abstract: R1004 transistor R1004 84-1LMI XR1004
Text: 30.0-46.0 GHz GaAs MMIC Receiver R1004 May 2005 - Rev 13-May-05 Features Sub-harmonic Receiver Integrated LNA, LO Doubler/Buffer, Image Reject Mixer +4.0 dBm Input Third Order Intercept IIP3 +2.0 dBm LO Drive Level 9.0 dB Conversion Gain 3.5 dB Noise Figure
|
Original
|
PDF
|
R1004
13-May-05
MIL-STD-883
transistor r1004
R1004 transistor
R1004
84-1LMI
XR1004
|
2306a
Abstract: D26A sot-23 Marking DL WTC2306A
Text: WTC2306A N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement
|
Original
|
PDF
|
WTC2306A
OT-23
OT-23
13-May-05
2306a
D26A
sot-23 Marking DL
WTC2306A
|
|
|
at91sam7s64 programmer schematic
Abstract: AT91SAM7S64 ISO7816 PA31
Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor • • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-circuit Emulation, Debug Communication Channel Support
|
Original
|
PDF
|
32-bit
16-bit
10-year
6070CS
18-May-05
at91sam7s64 programmer schematic
AT91SAM7S64
ISO7816
PA31
|
CDR04
Abstract: No abstract text available
Text: CDR MIL-PRF-55681 KEY BENEFITS • Broad capacitance range: 1.0 pF to 0.47 µF • Voltages: 50 WVDC and 100 WVDC • Military Established Reliability Failure Rates: M, P, R and S • Available in ten military packages: CDR01, CDR02, CDR03, CDR04, CDR06, CDR31, CDR32, CDR33, CDR34, CDR35
|
Original
|
PDF
|
MIL-PRF-55681
CDR01,
CDR02,
CDR03,
CDR04,
CDR06,
CDR31,
CDR32,
CDR33,
CDR34,
CDR04
|
Untitled
Abstract: No abstract text available
Text: VTSRC, VSSRC, VSORC-AB Vishay Thin Film 25 or 50 Mil Pitch, Termination Resistor/Capacitor Networks FEATURES • Lead Pb -Free available Pb-free • Resistors and capacitors on a single chip Available • Saves board space Actual Size • Reduces total assembly costs
|
Original
|
PDF
|
08-Apr-05
|
R1004
Abstract: transistor r1004
Text: 30.0-46.0 GHz GaAs MMIC Receiver R1004 May 2005 - Rev 13-May-05 Features Sub-harmonic Receiver Integrated LNA, LO Doubler/Buffer, Image Reject Mixer +4.0 dBm Input Third Order Intercept IIP3 +2.0 dBm LO Drive Level 9.0 dB Conversion Gain 3.5 dB Noise Figure
|
Original
|
PDF
|
R1004
13-May-05
MIL-STD-883
R1004
transistor r1004
|
U1003
Abstract: No abstract text available
Text: 19.0-26.0 GHz GaAs MMIC Transmitter U1003 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 8.0 dB Conversion Gain
|
Original
|
PDF
|
U1003
13-May-05
MIL-STD-883
U1003
|
Linear Potentiometer 500 R
Abstract: PRV4
Text: PRV4 Vishay Sfernice Industrial Potentiometer FEATURES • • • • • • • • • • 2 Watt at 70°C High power rating Low temperature coefficient Excellent stability Full sealing Low contact resistance variation Robust nickel plated brass shaft
|
Original
|
PDF
|
MIL-PRF-94
08-Apr-05
Linear Potentiometer 500 R
PRV4
|
84-1LMI
Abstract: U1002 XB1004 XP1013 XU1002
Text: 18.0-25.0 GHz GaAs MMIC Transmitter U1002 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain
|
Original
|
PDF
|
U1002
13-May-05
MIL-STD-883
84-1LMI
U1002
XB1004
XP1013
XU1002
|
ABSTRACT FOR REMOTE OPERATED MASTER SWITCH
Abstract: LVDS connector 40 pin TV board
Text: TFDU6108 Vishay Semiconductors Fast Infrared Transceiver Module 4 Mbit/s , IrDA Serial Interface Compatible, 2.7 V to 5.5 V Supply Voltage Range Description The TFDU6108 is an infrared transceiver module compliant to the latest IrDA standard for fast infrared
|
Original
|
PDF
|
TFDU6108
TFDU6108
08-Apr-05
ABSTRACT FOR REMOTE OPERATED MASTER SWITCH
LVDS connector 40 pin TV board
|
VD135
Abstract: No abstract text available
Text: 18.0-25.0 GHz GaAs MMIC Transmitter U1002 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain
|
Original
|
PDF
|
13-May-05
MIL-STD-883
VD135
|
ptfe insulator
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2003 RELEASED FOR PUBLICATION NOV ,2003- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST E R E V IS IO N S B LTR D /\ SINGLE PACK IN ACCORDANCE WITH AMP SPEC 107-3275 /K 50 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275
|
OCR Scan
|
PDF
|
13MAY05
12N0V03
31MAR2000
ptfe insulator
|