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    SMC Corporation of America CDRA1BXU100-180Z

    ROTARY ACTUATOR, RACK & PINION, AIR, CRA1-Z SERIES | SMC Corporation CDRA1BXU100-180Z
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    SMC Corporation of America CDRA1BXU100-100Z

    ROTARY ACTUATOR, RACK & PINION TYPE, CRA1 SERIES | SMC Corporation CDRA1BXU100-100Z
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    SMC Corporation of America CDRA1BXU100-100Z-X10

    ROTARY ACTUATOR, RACK & PINION, AIR, CRA1-Z SERIES | SMC Corporation CDRA1BXU100-100Z-X10
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    SMC Corporation of America CDRA1BXU100-100Z-M9BSDPC

    ROTARY ACTUATOR, RACK & PINION TYPE, CRA1 SERIES | SMC Corporation CDRA1BXU100-100Z-M9BSDPC
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    SMC Corporation of America CDRA1BXU100-100Z-M9BSDPC-X10

    ROTARY ACTUATOR, RACK & PINION, AIR, CRA1-Z SERIES | SMC Corporation CDRA1BXU100-100Z-M9BSDPC-X10
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    XU1001 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XU1001 Mimix Broadband 36.0-40.0 GHz GaAs MMIC Up-Converter Original PDF
    XU1001 Mimix Broadband 33.0-40.0 GHz GaAs MMIC Transmitter Original PDF
    XU1001-BD Mimix Broadband 33.0-40.0 GHz GaAs MMIC Transmitter Original PDF
    XU1001-BD-000V Mimix Broadband 33.0-40.0 GHz GaAs MMIC Transmitter Original PDF
    XU1001-BD-000W Mimix Broadband 33.0-40.0 GHz GaAs MMIC Transmitter Original PDF
    XU1001-BD-EV1 Mimix Broadband 33.0-40.0 GHz GaAs MMIC Transmitter Original PDF

    XU1001 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    U1001

    Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
    Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		U1001 13-May-05 MIL-STD-883 U1001 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter PDF

    B1002

    Abstract: XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100
    Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 June 2002 - Rev 26-Jun-02 Features Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 25.0 dB Small Signal Gain 4.0 dB Noise Figure +14 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		B1002 26-Jun-02 MIL-STD-883 B1002 XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100 PDF

    R300 diodes

    Abstract: b1002 100 XP1001 B1002 XB1002 XU1001
    Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias


    Original     		B1002 01-Apr-05 MIL-STD-883 R300 diodes b1002 100 XP1001 B1002 XB1002 XU1001 PDF

    84-1LMI

    Abstract: P1005 XB1005 XP1005 XU1001
    Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1005 05-May-05 MIL-STD-883 84-1LMI P1005 XB1005 XP1005 XU1001 PDF

    XB1005-BD

    Abstract: DM6030HK P1005-BD TS3332LD XP1005 XP1005-BD XU1001-BD
    Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1005-BD 10-Aug-07 MIL-STD-883 XP1005-BD-000V XP1005-BD-EV1 XP1005 XB1005-BD DM6030HK P1005-BD TS3332LD XP1005-BD XU1001-BD PDF

    TS3332LD

    Abstract: U1001 XP1005-BD XU1001-BD 330400
    Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD April 2007 - Rev 19-Apr-07 Features Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		U1001-BD 19-Apr-07 MIL-STD-883 U1001 XU1001-BD-000V XU1001-BD-000W XU1001-BD-EV1 XU1001 TS3332LD U1001 XP1005-BD XU1001-BD 330400 PDF

    Untitled

    Abstract: No abstract text available
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier January 2007 - Rev 26-Jan-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain


    Original     		26-Jan-07 P1001-BD MIL-STD-883 XP1001-BD-000X XP1001-BD XP1001-BD-EV1 PDF

    XP1001

    Abstract: XU1001 84-1LMI P1001 XB1002
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain


    Original     		05-May-05 P1001 MIL-STD-883 XP1001 XU1001 84-1LMI P1001 XB1002 PDF

    ID430

    Abstract: No abstract text available
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain


    Original     		02-May-07 P1001-BD MIL-STD-883 XP1001-BD-000V XP1001-BD-000W XP1001-BD-EV1 XP1001 ID430 PDF

    38H4PBA0157

    Abstract: R143 335E-08
    Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		05-May-05 P1005 MIL-STD-883 38H4PBA0157 R143 335E-08 PDF

    672047

    Abstract: 304091 1903354 13007-2
    Text: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias


    Original     		B1005-BD 06-Mar-07 MIL-STD-883 XB1005-BD-000V XB1005-BD-EV1 XB1005 672047 304091 1903354 13007-2 PDF

    U1001

    Abstract: pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598
    Text: 36.0-40.0 GHz GaAs MMIC Up-Converter U1001 July 2001 - Rev 7/27/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 4.0 dB Typical Small Signal Gain 35 dB Typical LO/RF Isolation Low DC Power Consumption Operates at +3.0 VDC 2.90 mm X 2.50 mm Die Size


    Original     		U1001 MIL-STD-883 U1001 pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598 PDF

    903-949

    Abstract: 74226 XP1001 13007-2 720-0164 4-01-3024 14364 62726 DM6030HK TS3332LD
    Text: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias


    Original     		B1005-BD 06-Mar-07 MIL-STD-883 XB1005-BD-000V XB1005-BD-EV1 XB1005 903-949 74226 XP1001 13007-2 720-0164 4-01-3024 14364 62726 DM6030HK TS3332LD PDF

    Untitled

    Abstract: No abstract text available
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain


    Original     		05-May-05 P1001 MIL-STD-883 PDF

    RD36K

    Abstract: No abstract text available
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1001 June 2002 - Rev 26-Jun-02 Features Chip Device Layout P1001 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain


    Original     		P1001 26-Jun-02 MIL-STD-883 RD36K PDF

    TS3332LD

    Abstract: U1001 XP1005-BD XU1001-BD
    Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD October 2008 - Rev 16-Oct-08 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Commercial-Level Visual Inspection Using


    Original     		U1001-BD 16-Oct-08 Mil-Std-883 XU1001-BD-000V XU1001-BD-000W XU1001-BD-EV1 XU1001 TS3332LD U1001 XP1005-BD XU1001-BD PDF

    XP1002

    Abstract: 84-1LMI P1002 XB1002 XU1001 420 MMIC
    Text: 26.0-40.0 GHz GaAs MMIC Power Amplifier P1002 May 2002 - Rev 01-May-02 Features Chip Device Layout P1002 ar y High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 12 dB Small Signal Gain


    Original     		P1002 01-May-02 MIL-STD-883 XP1002 84-1LMI P1002 XB1002 XU1001 420 MMIC PDF

    Untitled

    Abstract: No abstract text available
    Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias


    Original     		B1002 01-Apr-05 MIL-STD-883 PDF

    transistor s11 s12 s21 s22

    Abstract: No abstract text available
    Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002-BD May 2007 - Rev 02-May-07 Features High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias


    Original     		02-May-07 B1002-BD MIL-STD-883 XB1002-BD-000V XB1002-BD-000W XB1002-BD-EV1 XB1002 transistor s11 s12 s21 s22 PDF

    MAX 77693

    Abstract: 154407 672047 Mimix xb1005 190728 132-16 103-336-15 transistor RF S-parameters 443-958 319-770
    Text: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias


    Original     		06-Mar-07 B1005-BD MIL-STD-883 XB1005-BD-000V XB1005-BD-EV1 XB1005 MAX 77693 154407 672047 Mimix xb1005 190728 132-16 103-336-15 transistor RF S-parameters 443-958 319-770 PDF

    transistor B1005

    Abstract: 74226 014728 17555 672047 pin configuration of 74151 5609 transistor DATASHEET 5609 transistor 87511 74151 pin configuration
    Text: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias


    Original     		B1005 01-Apr-05 MIL-STD-883 transistor B1005 74226 014728 17555 672047 pin configuration of 74151 5609 transistor DATASHEET 5609 transistor 87511 74151 pin configuration PDF

    xg1015-SE

    Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
    Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com


    Original     		PDF

    P1005-BD

    Abstract: DM6030HK TS3332LD XB1005-BD XP1005 XP1005-BD XP1005-BD-000V XU1001-BD
    Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD October 2008 - Rev 05-Oct-08 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1005-BD 05-Oct-08 Mil-Std-883 XP1005-BD-000V XP1005-BD-EV1 XP1005 P1005-BD DM6030HK TS3332LD XB1005-BD XP1005-BD XP1005-BD-000V XU1001-BD PDF

    014728

    Abstract: 30106 38095 47185 62726 74226 DM6030HK TS3332LD XB1005 XB1005-BD-000V
    Text: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD October 2008 - Rev 02-Oct-08 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias


    Original     		B1005-BD 02-Oct-08 Mil-Std-883 XB1005 014728 30106 38095 47185 62726 74226 DM6030HK TS3332LD XB1005-BD-000V PDF