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    Infineon Technologies AG SPD13N05L

    SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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    ComSIT USA SPD13N05L 1,315
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    13N05L

    Abstract: SPD13N05L P-TO251-3-1 P-TO252 Q67040-S4116-A2 SPU13N05L 13N05
    Text: SPD 13N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.064 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 12.5 A • Logic Level • dv/dt rated


    Original     		PDF 13N05L SPD13N05L P-TO252 Q67040-S4124 P-TO251-3-1 Q67040-S4116-A2 SPU13N05L 13N05L SPD13N05L P-TO252 Q67040-S4116-A2 SPU13N05L 13N05

    13N05L

    Abstract: 13N05
    Text: SPD 13N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.064 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 12.5 A • Logic Level • dv/dt rated


    Original     		PDF 13N05L SPD13N05L SPU13N05L P-TO252 Q67040-S4124-A2 P-TO251-3-1 Q67040-S4116-A2 SPD13N05L 13N05L 13N05

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    Abstract: No abstract text available
    Text: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064


    OCR Scan     		PDF 13N05L SPD13N05L P-T0252 Q67040-S4124 SPU13N05L P-T0251 Q67040-S4116-A2 S35bQ5 Q133777 SQT-89