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    13N60 Search Results

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    13N60 Price and Stock

    STMicroelectronics STL13N60DM2

    MOSFET N-CH 600V 8A POWERFLAT HV
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    DigiKey STL13N60DM2 Cut Tape 10,586 1
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    • 10 $1.808
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    STL13N60DM2 Digi-Reel 10,586 1
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    • 10 $1.808
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    STL13N60DM2 Reel 6,000 3,000
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    Avnet Americas STL13N60DM2 Bulk 16 Weeks 3,000
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    Mouser Electronics STL13N60DM2 2,458
    • 1 $1.97
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    Avnet Silica STL13N60DM2 17 Weeks 3,000
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    EBV Elektronik STL13N60DM2 17 Weeks 3,000
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    STMicroelectronics STB13N60M2

    MOSFET N-CH 600V 11A D2PAK
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    DigiKey STB13N60M2 Reel 5,000 1,000
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    Avnet Americas STB13N60M2 Reel 16 Weeks 1,000
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    Mouser Electronics STB13N60M2 968
    • 1 $2.78
    • 10 $1.89
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    • 1000 $0.989
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    Newark STB13N60M2 Cut Tape 314 1
    • 1 $2.64
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    STB13N60M2 Reel 1,000
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    Bristol Electronics STB13N60M2 5,000
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    TME STB13N60M2 995 1
    • 1 $1.97
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    Avnet Silica STB13N60M2 1,000 17 Weeks 1,000
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    EBV Elektronik STB13N60M2 12,000 17 Weeks 1,000
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    STMicroelectronics STD13N60DM2

    MOSFET N-CH 600V 11A DPAK
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    DigiKey STD13N60DM2 Cut Tape 4,633 1
    • 1 $2.4
    • 10 $1.542
    • 100 $2.4
    • 1000 $0.77481
    • 10000 $0.77481
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    STD13N60DM2 Digi-Reel 4,633 1
    • 1 $2.4
    • 10 $1.542
    • 100 $2.4
    • 1000 $0.77481
    • 10000 $0.77481
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    STD13N60DM2 Reel 2,500 2,500
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    • 10000 $0.6745
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    Avnet Americas STD13N60DM2 Ammo Pack 32 Weeks, 4 Days 1
    • 1 $2.01
    • 10 $1.5
    • 100 $1.11
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    STD13N60DM2 Bulk 16 Weeks 2,500
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    Mouser Electronics STD13N60DM2 2,031
    • 1 $2.12
    • 10 $1.44
    • 100 $0.989
    • 1000 $0.744
    • 10000 $0.674
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    Newark STD13N60DM2 Cut Tape 2,466 1
    • 1 $2.15
    • 10 $1.64
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    Avnet Silica STD13N60DM2 17 Weeks 2,500
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    EBV Elektronik STD13N60DM2 17 Weeks 2,500
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    STMicroelectronics STD13N60M2

    MOSFET N-CH 600V 11A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STD13N60M2 Reel 2,500 2,500
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    Avnet Americas STD13N60M2 Reel 16 Weeks 2,500
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    Mouser Electronics STD13N60M2 4,637
    • 1 $1.64
    • 10 $1.1
    • 100 $0.742
    • 1000 $0.542
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    Newark STD13N60M2 Cut Tape 3,523 1
    • 1 $0.302
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    Bristol Electronics STD13N60M2 2,723
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    STD13N60M2 70 2
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    • 100 $1.344
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    TME STD13N60M2 2,059 1
    • 1 $1.81
    • 10 $1.49
    • 100 $1.21
    • 1000 $0.96
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    Avnet Silica STD13N60M2 5,000 17 Weeks 2,500
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    Chip One Stop STD13N60M2 Cut Tape 1,780
    • 1 $1.5
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    EBV Elektronik STD13N60M2 20,000 17 Weeks 2,500
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    STMicroelectronics STL13N60M6

    MOSFET N-CH 600V 7A POWERFLAT HV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STL13N60M6 Digi-Reel 2,490 1
    • 1 $2.61
    • 10 $1.68
    • 100 $2.61
    • 1000 $0.85316
    • 10000 $0.85316
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    STL13N60M6 Cut Tape 2,490 1
    • 1 $2.61
    • 10 $1.68
    • 100 $2.61
    • 1000 $0.85316
    • 10000 $0.85316
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    Avnet Americas STL13N60M6 Reel 14 Weeks 3,000
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    Mouser Electronics STL13N60M6
    • 1 $2.41
    • 10 $1.62
    • 100 $1.13
    • 1000 $0.834
    • 10000 $0.761
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    Avnet Silica STL13N60M6 15 Weeks 3,000
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    EBV Elektronik STL13N60M6 15 Weeks 3,000
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    Find more 13N60 price and stock on Findchips.com

    13N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20080310b PDF

    13n60c

    Abstract: 13n60
    Text: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		13N60C5 O-220 20090209c 13n60c 13n60 PDF

    MA660

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		13N60C5M O-220 MA660 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol


    Original     		13N60C5 O-247 O-220 20080310a PDF

    13n60c

    Abstract: 13N60
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20090209d 13n60c 13N60 PDF

    13N60

    Abstract: 13N60C5M
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20080523c 13N60 13N60C5M PDF

    13N60C5

    Abstract: 13N60 13n60c
    Text: IXKH 13N60C5 IXKP 13N60C5 Advanced Technical Information ID25 = 13 A = 600 V VDSS RDS on max = 0.3 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)


    Original     		13N60C5 13N60C5 O-247 O-220 13N60 13n60c PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol


    Original     		13N60C5M O-220 20070704a PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


    Original     		13N60C5M O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		13N60C5M O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20090209d PDF

    13N60

    Abstract: 13n60c5 13n60c L-14045
    Text: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB (IXKP) G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		13N60C5 O-220 20080523b 13N60 13n60c5 13n60c L-14045 PDF

    13N60M2

    Abstract: STL13N60M2
    Text: 13N60M2 N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID 13N60M2 650 V 0.42 Ω 7A • Extremely low gate charge • Lower RDS(on) x area vs previous generation


    Original     		STL13N60M2 DocID026363 13N60M2 STL13N60M2 PDF

    13n60

    Abstract: 13N60M2 STP13N60 STD13N60M2 STP13N60M2 STU13N60M2 STW13N60
    Text: 13N60M2, 13N60M2, 13N60M2, 13N60M2 N-channel 600 V, 0.318 Ω typ., 12 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220, IPAK and TO-247 packages Datasheet − preliminary data Features TAB TAB Order codes VDS @ TJmax RDS on max 3 ID 13N60M2


    Original     		STD13N60M2, STP13N60M2, STU13N60M2, STW13N60M2 O-220, O-247 STD13N60M2 STP13N60M2 STU13N60M2 13n60 13N60M2 STP13N60 STW13N60 PDF

    13N60E

    Abstract: Diode SMD SJ 65a SMD Diode KE Sj 07 DIODE SMD fmc1 fuji smd lot code 13N60 Diode type SMD marking SJ Diode type SMD marking SJ 09 Diode type SMD SJ 09
    Text: Device Name DATE DRAWN Jun.-12-'07 CHECKED Jun.-12-'07 CHECKED Jun.-12-'07 NAME : APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		FMI13N60E FMC13N60E FMB13N60E MS5F6870 MS5F687specification H04-004-03 13N60E Diode SMD SJ 65a SMD Diode KE Sj 07 DIODE SMD fmc1 fuji smd lot code 13N60 Diode type SMD marking SJ Diode type SMD marking SJ 09 Diode type SMD SJ 09 PDF

    fma13n60e

    Abstract: No abstract text available
    Text: DATE DRAWN Jun.-5-'07 CHECKED Jun.-5-'07 CHECKED Jun.-5-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		MS5F6869 FMA13N60E H04-004-05 H04-004-03 fma13n60e PDF

    Untitled

    Abstract: No abstract text available
    Text: 13N60M2, 13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A 13N60M2 TAB 13N60M2 3 3 D 2PAK


    Original     		STB13N60M2, STD13N60M2 STB13N60M2 DocID024569 PDF

    13N60M2

    Abstract: STF13N60M2 STFI13N60M2 13N60 *13n60
    Text: 13N60M2, 13N60M2 N-channel 600 V, 0.318 Ω typ., 12 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − preliminary data Features Order codes 13N60M2 13N60M2 VDS @ TJmax RDS on max ID 650 V 0.360 Ω 12 A 3


    Original     		STF13N60M2, STFI13N60M2 O-220FP STF13N60M2 O-220FP O-281) 13N60M2 STFI13N60M2 13N60 *13n60 PDF

    13N60

    Abstract: 13n60e ic MARKING QG ISO humidifier standards symbols
    Text: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		FMV13N60E MS5F7022 H04-004-05 H04-004-03 13N60 13n60e ic MARKING QG ISO humidifier standards symbols PDF

    13n60es

    Abstract: 13N60
    Text: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		FMH13N60ES MS5F7244 H04-004-05 H04-004-03 13n60es 13N60 PDF

    STW13N60

    Abstract: STD13N60M2
    Text: 13N60M2, 13N60M2, 13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet − production data TAB Features TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A 2 1


    Original     		STP13N60M2, STU13N60M2, STW13N60M2 O-220, O-247 STP13N60M2 STU13N60M2 O-220 O-247 STW13N60 STD13N60M2 PDF

    SGW13N60UFD

    Abstract: No abstract text available
    Text: SGW 13N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		SGW13N60UFD SGW13N60UFD PDF

    SGW13N60UF

    Abstract: No abstract text available
    Text: SGW 13N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance * Short Circuit Rated : Min. 2uS(@ Vge=15V) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		SGW13N60UF SGW13N60UF PDF

    SGW13N60UFD

    Abstract: No abstract text available
    Text: 13N60UFD IGBT CO-PAK FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=6.5A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ) APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls


    OCR Scan     		SGW13N60UFD SGW13N60UFD PDF