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Rochester Electronics LLC SGS13N60UFDTU IGBT 600V 13A TO-220F-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SGS13N60UFDTU	Tube	113,880		446	1 - 10 - 100 - 1000 $0.67 10000 $0.67	Buy Now
Rochester Electronics LLC SGP13N60UFDTU IGBT 600V 13A TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SGP13N60UFDTU	Tube	9,677		189	1 - 10 - 100 - 1000 $1.59 10000 $1.59	Buy Now
STMicroelectronics STB13N60M2 MOSFET N-CH 600V 11A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STB13N60M2	Cut Tape	8,297		1	1 $2.72 10 $1.918 100 $1.3439 1000 $1.12072 10000 $1.12072	Buy Now
	STB13N60M2	Digi-Reel	8,297		1	1 $2.72 10 $1.918 100 $1.3439 1000 $1.12072 10000 $1.12072	Buy Now
	STB13N60M2	Reel	5,000		1,000	1 - 10 - 100 - 1000 $1.0192 10000 $0.91563	Buy Now
Avnet Americas	STB13N60M2	Reel		14 Weeks	1,000	1 - 10 - 100 - 1000 $0.92722 10000 $0.87202	Buy Now
Mouser Electronics	STB13N60M2		952			1 $2.67 10 $1.88 100 $1.35 1000 $1.04 10000 $0.915	Buy Now
Newark ()	STB13N60M2	Cut Tape	989		1	1 $2.69 10 $2.21 100 $1.74 1000 $1.46 10000 $1.46	Buy Now
	STB13N60M2	Reel			1,000	1 - 10 - 100 - 1000 $1.51 10000 $1.46	Buy Now
RS	STB13N60M2	Bulk			5	1 - 10 $2.55 100 $2.42 1000 $2.18 10000 $2.18	Get Quote

STMicroelectronics	STB13N60M2		952		1	1 $2.62 10 $1.84 100 $1.32 1000 $1.07 10000 $1.07	Buy Now
Bristol Electronics	STB13N60M2		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	STB13N60M2		995		1	1 $1.96 10 $1.61 100 $1.4 1000 $1.16 10000 $1.16	Buy Now
Avnet Silica	STB13N60M2		3,000	15 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STB13N60M2		2,000	15 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	STB13N60M2		2,241			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STL13N60DM2 MOSFET N-CH 600V 8A POWERFLAT HV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL13N60DM2	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.832	Buy Now
Avnet Americas	STL13N60DM2	Bulk		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.83723	Buy Now
Mouser Electronics	STL13N60DM2		2,307			1 $1.97 10 $1.57 100 $1.12 1000 $0.857 10000 $0.831	Buy Now
STMicroelectronics	STL13N60DM2		2,307		1	1 $1.93 10 $1.54 100 $1.1 1000 $0.9 10000 $0.9	Buy Now
Avnet Silica	STL13N60DM2		3,000	17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STL13N60DM2			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC FCP13N60N POWER FIELD-EFFECT TRANSISTOR, 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCP13N60N	Bulk	3,541		123	1 - 10 - 100 - 1000 $2.45 10000 $2.45	Buy Now

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13N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	13N60C5M O-220 20080310b	PDF
SGW13N60UFD Contextual Info: SGW 13N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance CO-PAK, IGBT with FRD : Trr = 37nS (typ.) A P P LIC A TIO N S * * * * AC & DC Motor controls General Purpose Inverters	OCR Scan	SGW13N60UFD SGW13N60UFD	PDF
13n60c Abstract: 13n60 Contextual Info: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	13N60C5 O-220 20090209c 13n60c 13n60	PDF
MA660 Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	13N60C5M O-220 MA660	PDF
Contextual Info: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol	Original	13N60C5 O-247 O-220 20080310a	PDF
13n60c Abstract: 13N60 Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	13N60C5M O-220 20090209d 13n60c 13N60	PDF
13N60 Abstract: 13N60C5M Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	13N60C5M O-220 20080523c 13N60 13N60C5M	PDF
13N60C5 Abstract: 13N60 13n60c Contextual Info: IXKH 13N60C5 IXKP 13N60C5 Advanced Technical Information ID25 = 13 A = 600 V VDSS RDS on max = 0.3 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)	Original	13N60C5 13N60C5 O-247 O-220 13N60 13n60c	PDF
SGW13N60UF Contextual Info: SGW 13N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance * Short Circuit Rated : Min. 2uS(@ Vge=15V) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters	OCR Scan	SGW13N60UF SGW13N60UF	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol	Original	13N60C5M O-220 20070704a	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions	Original	13N60C5M O-220	PDF
Contextual Info: Advanced Technical Information IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	13N60C5M O-220	PDF
Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	13N60C5M O-220 20090209d	PDF
13N60 Abstract: 13n60c5 13n60c L-14045 Contextual Info: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB (IXKP) G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	13N60C5 O-220 20080523b 13N60 13n60c5 13n60c L-14045	PDF

13n60 Abstract: 13N60M2 STP13N60 STD13N60M2 STP13N60M2 STU13N60M2 STW13N60 Contextual Info: 13N60M2, 13N60M2, 13N60M2, 13N60M2 N-channel 600 V, 0.318 Ω typ., 12 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220, IPAK and TO-247 packages Datasheet − preliminary data Features TAB TAB Order codes VDS @ TJmax RDS on max 3 ID 13N60M2	Original	STD13N60M2, STP13N60M2, STU13N60M2, STW13N60M2 O-220, O-247 STD13N60M2 STP13N60M2 STU13N60M2 13n60 13N60M2 STP13N60 STW13N60	PDF
13N60 Abstract: 13N60ES 13N60E TO-220F JEDEC Contextual Info: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	FMP13N60ES MS5F7241 H04-004-05 H04-004-03 13N60 13N60ES 13N60E TO-220F JEDEC	PDF
13N60E Abstract: Diode SMD SJ 65a SMD Diode KE Sj 07 DIODE SMD fmc1 fuji smd lot code 13N60 Diode type SMD marking SJ Diode type SMD marking SJ 09 Diode type SMD SJ 09 Contextual Info: Device Name DATE DRAWN Jun.-12-'07 CHECKED Jun.-12-'07 CHECKED Jun.-12-'07 NAME : APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor	Original	FMI13N60E FMC13N60E FMB13N60E MS5F6870 MS5F687specification H04-004-03 13N60E Diode SMD SJ 65a SMD Diode KE Sj 07 DIODE SMD fmc1 fuji smd lot code 13N60 Diode type SMD marking SJ Diode type SMD marking SJ 09 Diode type SMD SJ 09	PDF
SGW13N60UFD Contextual Info: 13N60UFD IGBT CO-PAK FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=6.5A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ) APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls	OCR Scan	SGW13N60UFD SGW13N60UFD	PDF
fma13n60e Contextual Info: DATE DRAWN Jun.-5-'07 CHECKED Jun.-5-'07 CHECKED Jun.-5-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor	Original	MS5F6869 FMA13N60E H04-004-05 H04-004-03 fma13n60e	PDF
Contextual Info: 13N60M2, 13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A 13N60M2 TAB 13N60M2 3 3 D 2PAK	Original	STB13N60M2, STD13N60M2 STB13N60M2 DocID024569	PDF
13N60M2 Abstract: STF13N60M2 STFI13N60M2 13N60 *13n60 Contextual Info: 13N60M2, 13N60M2 N-channel 600 V, 0.318 Ω typ., 12 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − preliminary data Features Order codes 13N60M2 13N60M2 VDS @ TJmax RDS on max ID 650 V 0.360 Ω 12 A 3	Original	STF13N60M2, STFI13N60M2 O-220FP STF13N60M2 O-220FP O-281) 13N60M2 STFI13N60M2 13N60 *13n60	PDF
13N60 Abstract: 13n60e ic MARKING QG ISO humidifier standards symbols Contextual Info: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor	Original	FMV13N60E MS5F7022 H04-004-05 H04-004-03 13N60 13n60e ic MARKING QG ISO humidifier standards symbols	PDF
13n60es Abstract: 13N60 Contextual Info: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	FMH13N60ES MS5F7244 H04-004-05 H04-004-03 13n60es 13N60	PDF
STW13N60 Abstract: STD13N60M2 Contextual Info: 13N60M2, 13N60M2, 13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet − production data TAB Features TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A 2 1	Original	STP13N60M2, STU13N60M2, STW13N60M2 O-220, O-247 STP13N60M2 STU13N60M2 O-220 O-247 STW13N60 STD13N60M2	PDF

13N60 Search Results

13N60 Price and Stock

Rochester Electronics LLC SGS13N60UFDTU

Rochester Electronics LLC SGP13N60UFDTU

STMicroelectronics STB13N60M2

STMicroelectronics STL13N60DM2

Rochester Electronics LLC FCP13N60N

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