1417 transistor
Abstract: max 1417 1417-6A
Text: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications
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417-6A
417-6A
1417 transistor
max 1417
1417-6A
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1417 transistor
Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
Text: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier
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417-12A
1417 transistor
transistor 1417
microwave amplifier 2.4 ghz 10 watts
c 1417
1417-12A
2.4 ghZ rf transistor
amplifier TRANSISTOR 12 GHZ
RF TRANSISTOR 1 WATT
POWER TRANSISTOR 1 WATT 2.4 GHZ
1417 ic
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1417-01 11-2011 5SNA 2400E170305 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2400E170305
CH-5600
2400E170305
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Voltage Level Meter
Abstract: LB-14 SANYO MV LB1417
Text: Ordering number:ENN880C Monolithic Digital IC LB1407, 1417 AC/DC Voltage Level Meter Features and Functions Package Dimensions • The LB1407 and LB1417 are based on dB scale and linear scale respectively. • The input level is indicated in the form of a bar by means
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ENN880C
LB1407,
LB1407
LB1417
3003B-DIP14
B1407,
51min
LB1407]
Voltage Level Meter
LB-14
SANYO MV
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0805CS-560XKBC
Abstract: MAX3693 MAX3693ECJ MAX3693EVKIT TAJD336K010
Text: 19-1417; Rev 0; 12/98 MAX3693 Evaluation Kit The MAX3693 evaluation kit EV kit is an assembled, surface-mount demonstration board that provides easy evaluation of the MAX3693 622Mbps serializer with clock synthesis and LVDS inputs. Component List DESIGNATION QTY
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MAX3693
622Mbps
52MHz,
76MHz,
84MHz,
88MHz)
TAJD336K010
MAX3693
0805CS-560XKBC
MAX3693ECJ
MAX3693EVKIT
TAJD336K010
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R924
Abstract: No abstract text available
Text: 19-1417; Rev 0; 12/98 MAX3693 Evaluation Kit The MAX3693 evaluation kit EV kit is an assembled, surface-mount demonstration board that provides easy evaluation of the MAX3693 622Mbps serializer with clock synthesis and LVDS inputs. Component List DESIGNATION QTY
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MAX3693
622Mbps
52MHz,
76MHz,
84MHz,
88MHz)
MAX3693
R924
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5SNA2400E170305
Abstract: 5SYA2039 Diode 5059 2400e
Text: Data Sheet, Doc. No. 5SYA 1417-03 06-2012 5SNA 2400E170305 HiPak IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2400E170305
CH-5600
2400E170305
5SNA2400E170305
5SYA2039
Diode 5059
2400e
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5SNA2400E170305
Abstract: 5SYA2042
Text: Data Sheet, Doc. No. 5SYA 1417-02 04-2012 5SNA 2400E170305 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2400E170305
CH-5600
2400E170305
5SNA2400E170305
5SYA2042
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1417-04 02-2014 5SNA 2400E170305 HiPak IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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Original
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2400E170305
CH-5600
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PDF
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5SNA2400E170305
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1417-03 06-2012 5SNA 2400E170305 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2400E170305
CH-5600
2400E170305
5SNA2400E170305
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MS4800
Abstract: 141700
Text: Data Sheet, Doc. No. 5SYA 1417-00 05-2011 5SNA 2400E170305 ABB HiPakTM, IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2400E170305
CH-5600
MS4800
141700
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"8 bit full adder"
Abstract: 4 bit binary subtractor using ic 74xx cb4ce Lattice PDS Version 3.0 users guide DIGITAL CLOCK USING 74XX IC g22v10 Pal20v8 data sheet IC 74xx series GAL programming Guide 74xx ttl
Text: ON LIN E R XEPLD SCHEMATIC D ESI G N G UI DE TABL E OF CONT ENT S INDEX GO T O OT HER BOOKS 0 4 0 1417 Copyright 1994-1995 Xilinx Inc. All Rights Reserved. Contents Chapter 1 Getting Started with Schematic Design An Overview of Schematic Design Methods .
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BF862
Abstract: bf862 photodiode LT6230-10 LT6230 SFH213 LT1222 LTC6240 jfet "SIT" jfet photodiode bf862 photodiode JFET
Text: DEMO C IR C U IT 1 4 1 7 LT6230,Q LT6230-10, U IC K S TA R TLTC6240 G U IDE L T 6 2 3 0 , L T 6 2 3 0 -1 0 , L T C 6 2 4 0 L o w N o is e + / -5 V T ra n s im p e d a n c e A m p lifie r DESCRIPTION Demonstration Circuit 1417 is a Low Noise Transipedance Amplifier. It utilizes the low voltage noise
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LT6230,
LT6230-10,
TLTC6240
LT6230
LT6230-10
LTC6240
BF862,
100kH
130nV/
BF862
bf862 photodiode
SFH213
LT1222
jfet "SIT"
jfet photodiode
bf862 photodiode JFET
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Brief April 2001 TMXF84622 Ultra Mapper 622/155 Mbits/s SONET/SDH x84/x63 DS1/E1 Features • Versatile IC supports 622/155 Mbits/s SONET/ SDH interface solutions for T3/E3, DS2, T1/E1/J1, and DS0/E0/J0 applications. ■ Implementation supports both linear 1 + 1,
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TMXF84622
x84/x63
STS-12/
STS-12/STM-4
PB01-092PDH
PB01-053PDH)
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1417-2
Abstract: Load VSWR tolerance CAV 444 1417 ic
Text: 1417-2 2 Watt "28 Volts’ Class c CHz TECHNOLOGY »FMicKowAVE silicon powe > T»*N5HTo«i M ic ro w a v e 1 4 0 0 - 1 7 0 0 GENERAL DESCRIPTION M H z CASE OUTLINE The 1417-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is
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RD11110
000QD34
1417-2
Load VSWR tolerance
CAV 444
1417 ic
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17gh
Abstract: No abstract text available
Text: m m B & F P rci'jifcts m Microsemi f'NWnws iy 140 Com merce Drive Montgomeryville, PA 18936-1013 Tel: <215 631-9840 TCC 1417-25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICAI FREQUENCY 1 .4 1.70Hz POWSR OUT 2SW POWER OAiM S OdB V O LTAG E
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SO1868
1417-2it
TCG1417-25
17gh
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Untitled
Abstract: No abstract text available
Text: O 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - LOC ALL RIGHTS RESERVED. REVISIONS DIST H LTR DESCRIPTION c 5 5 5 4 4 U1 L±J - D o CO X Lj_ LU lu V BU SHING O CU WITH IT E M < EH-1417-99 19 - 02-00
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EH-0033-99
EH-1417-99
50UI5A
09SEP97
31MAR2000
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Untitled
Abstract: No abstract text available
Text: ro m zO . i/ ODD CKT. 55.0 52.5 50.0 47.5 45.0 42.5 40.0 37.5 35.0 32.5 30.0 52.9 50.4 47.9 45.4 42.9 40.4 37.9 35.4 32.9 30.4 27.9 47.5 45.0 42.5 40.0 37.5 35.0 32.5 30.0 27.5 25.0 22.5 C B A D 53421-2017 /I -1917 s -1817 -1717 -1617 -1517 -1417 -1317 \ s -1217
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UL94V-0
66NYL0N
SD-53421--
XJ-32
5342I
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44w TRANSISTOR
Abstract: BV 1351 24V epsilam 10 mb 8936 M147 TCC1417-25 sd1066 1029f 1417-25
Text: H * : I f/ lv f T»j-m ! fII P ro g re s s P o w e re d b y T ec h no log y "*4 Commerce Drive Montgom ery ville, PA 18936-1013. Tel: 215 631-9840 TC C 1417-25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4 1.7GHz POWER OUT
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TCC1417-25
TCC1417-25
S88TCC14I7
44w TRANSISTOR
BV 1351 24V
epsilam 10
mb 8936
M147
sd1066
1029f
1417-25
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Untitled
Abstract: No abstract text available
Text: OIMDTTDÆML I R i U M i i Final Electrical Specifications u r LT C m 1417 TECHNOLOGY Low Power 14-Bit, 400ksps Sampling ADC Converter with Serial I/O Ja n u a ry 1999 DCSCRIPTIOn F€flTUR€S Single Supply 5V or ±5V Operation Sample Rate: 400ksps ±1.25LSB INL and ±1LSB DNL Max
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14-Bit,
400ksps
25LSB
16-Pin
400ksps,
14-bit
100dBTHD
LTC1605
16-Bit,
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TO5 package
Abstract: 040W
Text: VI SH AY I N T E R T E C H / ELEK 34E D ^0232 G0G12M7 VISH 4 iBl7TiWaT7araiM9i fitgl VISHAY Resistive Systems Group . . . a VISHAY Company ♦ 63 Lincoln Highway, Malvern, PA 19355 ♦ 2 1 5 6 4 4 *1 3 0 0 Standard Dimensions VISHAY Model 1417 8 Pin (0.230” pin circle) TO-5 Package
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Q0G12M7
V15X5
V15X5
TO5 package
040W
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Untitled
Abstract: No abstract text available
Text: il m a n -* i lC iO S & n il W p S H i S mm£ ? ^40 C o m m e rce D rive M o n tg o m e ry v ilie , PA 18936-1013 Tel: 215)631-9840 TC C 1417“25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4-1,7GHz POWER OUT 25W POWER GAIN
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TCG1417-25
TCC1417-25
64S/1S
895/S2J3
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Untitled
Abstract: No abstract text available
Text: DWG. NO. DO NOT SD-54550-005 S C A L E DRAWING E C NO. DRWN: CH'Ks APPR: REVISED no. J 2 0 0 2 - 1454 DRWN: j.O K E '01/12/12 CH 'Ks h .HIRATA '01/12/12 A P P R : M.SASAQ '01/12/12 ec REVISED ec no. J 2 0 0 2 - 1417 DRWN: J.O KE '01/12/07 CH 'Ks h .HIRATA
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SD-54550-005
J2002-0I84
JC2000-0783
SD-54550-006
MXJ-54
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b8550
Abstract: CY7C245-45DMB CY7C245-35DMB 5962-8873501LX OMO48444 WS57C45-45KMB CY7C245 cypress mil-std-883 prom
Text: DESC FORM 193 SEP 87 D IS T R IB U T IO N S T A T E M E N T A. , u s g o v c rn m e n t p u n t in g o ffice : i9S7 — 7 « a i2 9 /6 0 » n 5962 — 1:1417 A p p r o v e d lo r p u b lic r e le a s e ; d is t r ib u t io n i s u n lim ite d . 1. SCOPE 1.1 Scope. T h is drawing d e scrib e s device requirements fo r c la s s B m ic ro c irc u its in accordance
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1988-S50-547
b8550
CY7C245-45DMB
CY7C245-35DMB
5962-8873501LX
OMO48444
WS57C45-45KMB
CY7C245
cypress mil-std-883 prom
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