5SMY 12J1721
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage
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12J1721
CH-5600
5SMY 12J1721
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5SLA 3600E170300
Abstract: 5SYA2039 3600E170300
Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
C9113
CH-5600
5SLA 3600E170300
5SYA2039
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power
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1200G330100
5SYA1563-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability
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0600G650100
5SYA1558-02
CH-5600
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the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
Text: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3
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CH-5600
5SYA2053-02
the calculation of the power dissipation for the igbt and the inverse diode in circuits
"the calculation of the power dissipation for the igbt and the inverse diode in circuits"
ABB IGBT
ABB IGBT inverter
5SYA2042
5sna 1200e330100
transistor book
5SYA2043
ABB IGBT part number explanation
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PDF
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5SYA2042
Abstract: 5SNA0400J650100
Text: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal
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0400J650100
CH-5600
5SYA2042
5SNA0400J650100
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5SNA1200G450300
Abstract: 1200G450300 cosmi
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 PRELIMINARY Doc. No. 5SYA 1401-00 Dec 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1200G450300
CH-5600
5SNA1200G450300
1200G450300
cosmi
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IC 7400 configuration
Abstract: 5SNA1200G450300
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-01 Mar 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1200G450300
CH-5600
IC 7400 configuration
5SNA1200G450300
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cosmi
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1407-05 06-2012 5SNA 1500E330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 1500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1500E330305
CH-5600
1500N330305
cosmi
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IC 7400 configuration
Abstract: No abstract text available
Text: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 Doc. No. 5SYA 1598-03 Apr 12 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0650J450300
CH-5600
IC 7400 configuration
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5SNA1000G450300
Abstract: cosmi 5SNA 1000G450300
Text: VCE IC = = 4500 V 1000 A ABB HiPakTM IGBT Module 5SNA 1000G450300 PRELIMINARY Doc. No. 5SYA 1597-00 Oct 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1000G450300
CH-5600
5SNA1000G450300
cosmi
5SNA 1000G450300
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1426-00 05-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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0250P330305
CH-5600
0250P330305
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-04 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability
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1200E330100
5SYA1556-04
CH-5600
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IGBT CHIP 600V ABB
Abstract: No abstract text available
Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Apr 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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2400E120100
5SYA1561-00
CH-5600
IGBT CHIP 600V ABB
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 PRELIMINARY Doc. No. 5SYA 1598-00 Nov 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0650J450300
CH-5600
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PDF
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1200G450350
Abstract: 5SNA1200G450350
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability
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1200G450350
CH-5600
1200G450350
5SNA1200G450350
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5SNA2400E170305
Abstract: 5SYA2042
Text: Data Sheet, Doc. No. 5SYA 1417-02 04-2012 5SNA 2400E170305 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2400E170305
CH-5600
2400E170305
5SNA2400E170305
5SYA2042
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage
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12M1730
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power
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1200G450350
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-03 01-2014 • Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling
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1200G330100
5SYA1563-03
UL1557,
E196689
CH-5600
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PDF
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ic 082 specifications
Abstract: No abstract text available
Text: VCE IC = = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100 Doc. No. 5SYA 1554-03 Nov. 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1800E170100
CH-5600
ic 082 specifications
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage
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12K1721
CH-5600
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5SLD1000N330300
Abstract: 5SYA2039 diode in 400 1000N330300 UC1250
Text: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1000N330300
CH-5600
5SLD1000N330300
5SYA2039
diode in 400
UC1250
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