nec 8772

Abstract: LD 7522 142.58 NE32584C NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE

Contextual Info: ERA-8SM Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-8SM Reference Data:RDF-1211B S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -35dBm, Icc = 36mA, Vd = 3.71V @Temperature = +25degC

ALNUP+161609

Contextual Info: HAMMOND MANUFACTURING CO. INC. 475 Cayuga Rd., Suite 100 Cheektowaga, NY 14225 Tel: 716 630-7030 Fax: (716) 630-7042 www.hammondmfg.com Manufacturer’s Suggested U.S. Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

Amplifier SOT-89 c4

Abstract: ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 5, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

Contextual Info: FLM5964-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=47.0dBm Typ. • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=39%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION

1581-4

Contextual Info: Surface Mount Voltage Controlled Oscillator Linear Tuning ROS-1584-219+ 1555 to 1575 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pushing • Low Pulling • Aqueous washable CASE STYLE: CK605 PRICE: $ 15.95 ea. QTY 5-49 + RoHS compliant in accordance

Contextual Info: Coaxial Voltage Controlled Oscillator 5V Tuning for PLL IC's ZX95-755+ 720 to 755 MHz Features • linear tuning characteristics • low phase noise • low pushing • low pulling • 0.5-5V tuning voltage range • protected by US patent 6,790,049 CASE STYLE: GB956

Contextual Info: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-1584+ 1555 to 1575 MHz Features • linear tuning characteristics • low phase noise • low pushing • low pulling • protected by US patent 6,790,049 Connectors Model Price Qty. Applications SMA

Contextual Info: Surface Mount Voltage Controlled Oscillator Linear Tuning ROS-1584-219+ 1555 to 1575 MHz Features • linear tuning characteristics • low phase noise • low pushing • low pulling • aqueous washable CASE STYLE: CK605 PRICE: $ 15.95 ea. QTY 5-49 + RoHS compliant in accordance

3050C

Abstract: A 3050C 30614 a/stk 3050c
Contextual Info: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3050C+ 2856 to 3050 MHz Features • low phase noise • low pushing • low pulling • protected by US patent 6,790,049 CASE STYLE: GB956 Applications •r&d • lab • instrumentation • defense systems

AP601

Abstract: AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114
Contextual Info: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT

072149

Abstract: 65434 83004 philips BGA2717 marking 52 sot363 MMIC marking 81
Contextual Info: BGA2717 MMIC wideband amplifier Rev. 02 — 24 September 2004 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.

Contextual Info: Coaxial Voltage Controlled Oscillator 5V Tuning for PLL IC's ZX95-755+ 720 to 755 MHz Features • Linear tuning characteristics • Low phase noise • Low pushing • Low pulling • 0.5-5V tuning voltage range • Protected by US patent 6,790,049 CASE STYLE: GB956

transistor a2431

Abstract: A2611 8 Pin a2955 a2733 transistor a954 A2611
Contextual Info: 50 MHz to 4.0 GHz RF/IF Gain Block ADL5602 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM GND Fixed gain of 20 dB Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dBm at 2.0 GHz

Contextual Info: MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally

Contextual Info: Surface Mount Voltage Controlled Oscillator Linear Tuning ROS-3050C-119+ 2856 to 3050 MHz Features • Low Phase Noise • Low Pushing • Low Pulling • Aqueous washable CASE STYLE: CK605 PRICE: $ 15.95 ea. QTY 5-49 + RoHS compliant in accordance with EU Directive (2002/95/EC)

Contextual Info: Coaxial Voltage Controlled Oscillator 5V Tuning for PLL IC's ZX95-755+ 720 to 755 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pushing • Low Pulling • 0.5-5V Tuning Voltage range • Protected by US patent 6,790,049 CASE STYLE: GB956

pin layout IC 7448

Contextual Info: Low Phase Noise Voltage Controlled Oscillator 5V Tuning for PLL IC's ROS-755+ 720 to 755 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pushing • Low Pulling • 0.5-5V Tuning Voltage range • Aqueous washable CASE STYLE: CK605

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 8, 2/2012 MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

130-082

Abstract: ic 38438 38438 IC 112246 128777 890 f 642 ic pdf datasheet PIN CONFIGURATION IC 555 THN6201 dc 38438 33171
Contextual Info: THN6201 series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain

IPC 6012

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 3, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

154754

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 4, 5/2006 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

ED-4701

Abstract: FLM5964-45F
Contextual Info: FLM5964-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=47.0dBm Typ. ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

130-082

Abstract: ic 38438 33171 62944 63950 128777 THN6201 THN6201E THN6201S THN6201U
Contextual Info: THN6201 Series Semiconductor SiGe NPN Transistor SOT-523 Unit in mm □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain