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    14212N Search Results

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    14212N Price and Stock

    IXYS Corporation MDD142-12N1

    DIODE MODULE GP 1200V 165A Y4-M6
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    DigiKey MDD142-12N1 Box 6
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    • 100 $37.27333
    • 1000 $37.27333
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    Mouser Electronics MDD142-12N1
    • 1 $38.43
    • 10 $38.43
    • 100 $37.27
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    TTI MDD142-12N1 Box 6
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    • 10 $40.35
    • 100 $37.27
    • 1000 $37.27
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    TME MDD142-12N1 1
    • 1 $65.65
    • 10 $52.17
    • 100 $52.17
    • 1000 $52.17
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    Littelfuse Inc MDD142-12N1

    Bipolar Module - Diode Y4-M5/6/ Box |Littelfuse MDD142-12N1
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    Newark MDD142-12N1 Bulk 6
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    IXYS Corporation MDD142-12NI

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    Bristol Electronics MDD142-12NI 3
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    YAGEO Corporation CC0402KRX5R6BB224

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 10V 0.22uF X5R 0402 10%
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    TTI CC0402KRX5R6BB224 Reel 110,000 10,000
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    Murata Manufacturing Co Ltd GRM1885C1H560JA01D

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 56 pF 50 VDC 5% 0603 C0G (NP0)
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    TTI GRM1885C1H560JA01D Reel 16,000 4,000
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    14212N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    142-08N1

    Abstract: 142-18N1
    Text: MDD 142 IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V High Power Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type Test Conditions TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms


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    PDF 142-08N1 142-12N1 142-14N1 142-16N1 142-18N1 142-18N1

    ixys MDD 26 - 14

    Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
    Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l


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    Untitled

    Abstract: No abstract text available
    Text: MDD 142 IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V High Power Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type 1 Test Conditions TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms


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    PDF 142-08N1 142-12N1 142-14N1 142-16N1 142-18N1

    "Power Diode"

    Abstract: 142-14N1 142-08N1
    Text: MDD 142 IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V High Power Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type 1 Test Conditions TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms


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    PDF 142-08N1 142-12N1 142-14N1 142-16N1 142-18N1 "Power Diode" 142-14N1 142-08N1

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    MDD 500-22N1

    Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
    Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●


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    PDF D6-11 D6-14 D6-17 D6-20 D6-23 D6-26 D6-29 D6-32 D6-35 D6-38 MDD 500-22N1 ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1

    142-16N1

    Abstract: No abstract text available
    Text: High Power Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MDD 142 IFRMS = 2 x 300 A IFAVM = 2 x 165 A VRRM = 800 - 1800 V 3 Type 1 2 Test Conditions TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0


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    MDD 500-22N1

    Abstract: MDO 500-12N1 500-22N1 255-16N1 26-14N1B 500-20N1 MDD 172-14N1
    Text: Diode Modules, J - L 1 » 1-N— 11 I L w 1 Single and Dual -J MDO lFAV= 36-560 A v Type I FAV @ T'C V A X 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800_


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    PDF 26-08N1B 26-12N1B 26-14N1B 26-16N1B 26-18N1B 44-06N1B 44-12N1B 44-14N1B 44-16N1B 44-18N1B MDD 500-22N1 MDO 500-12N1 500-22N1 255-16N1 500-20N1 MDD 172-14N1

    MDD 500-12N1

    Abstract: 142-12N1 26-16N1B 172-14N1 72-08N1 172-18N1 500-14N1 MDD 500-14N1 56-18N1 56-14N1B
    Text: , Diode Modules Single and Double lFAV = 36-500 A Type ^th JC *FSM p mQ 0.8 6.0 K/W K/W 1.0 0.2 MDD MDD MDD MDD MDD 26-08N1B 26-12N1B 26-14N1B 26-16N1B 26-18N1B 800 1200 1400 1600 1800 36 MDD MDD MDD MDD MDD 44-08N1B 44-12N1B 44-14N1B 44-16N1B 44-18N1B 800


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    PDF O-240 26-08N1B 26-12N1B 26-14N1B 26-16N1B 26-18N1B 44-08N1B 44-12N1B 44-14N1B 44-16N1B MDD 500-12N1 142-12N1 172-14N1 72-08N1 172-18N1 500-14N1 MDD 500-14N1 56-18N1 56-14N1B

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


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    PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S ' High Power Diode Modules MDD 142 lFRMS =2x300A iFAVM =2x165 a VRRM =800-1800 V ^RSM ^RRM Type 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MOD MDD MDD MDD MDD Symbol ^FRMS ^FAVM ^FSM Jpdt 142-08N1 142-12N1 142-14N1 142-16N1 142-18N1 Test Conditions_ Maximum Ratings


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    PDF 2x300A 2x165 142-08N1 142-12N1 142-14N1 142-16N1 142-18N1

    mdd 42

    Abstract: diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B
    Text: Diode Modules, Single and Double f ‘ 1 FAV = 36-500 A MDO Type FSM New 45°C 10 ms A MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD 26-16N1B MDD26-18N1B 100 60 800 1200 1400 1600 1800 36 800 59 100 100 1150 100 150 1400 p 650 m iî °C 6.0 150 K/W 1.0 0.2 24 Fig. 24 TO-240 AA


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    PDF O-240 MDD26-08N1B MDD26-12N1B MDD26-14N1B 26-16N1B MDD26-18N1B MDD44-08N1B 44-12N1B 44-14N1B MDD44-16N1B mdd 42 diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


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    PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50