APA600
Abstract: AA23 APA075 APA1000 APA150 APA300 APA450 APA750
Text: ProASICPLUS Flash Family FPGAs Package Pin Assignments 100-Pin TQFP 1 100 100-Pin TQFP Note For Package Manufacturing and Environmental information, visit the Package Resource center at . v5.8 2-1 ProASICPLUS Flash Family FPGAs
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100-Pin
APA075
APA150
APA600
AA23
APA075
APA1000
APA150
APA300
APA450
APA750
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PDF
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Untitled
Abstract: No abstract text available
Text: 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 1.2 January 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4D263238I-VC
128Mbit
144-Ball
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PDF
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Untitled
Abstract: No abstract text available
Text: Primarily 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 0.1 Sep 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4D263238I-VC
128Mbit
144-Ball
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PDF
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K4D263238I-VC50
Abstract: No abstract text available
Text: Target 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 0.0 May 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4D263238I-VC
128Mbit
144-Ball
K4D263238I-VC50
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PDF
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Untitled
Abstract: No abstract text available
Text: v5.0 ProASICPLUS TM Flash Family FPGAs Features and Benefits • High Capacity High Performance Routing Hierarchy Commercial and Industrial • • • • • • • 75,000 to 1 Million System Gates 27 k to 198 kbits of Two-Port SRAM 66 to 712 User I/Os
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schematic diagram online UPS for high frequency
Abstract: ag19
Text: v3.3 ProASICPLUS TM Flash Family FPGAs Features and Benefits • • High Capacity I/O • • • • • 75,000 to 1 million System Gates 27k to 198kbits of Two-Port SRAM 66 to 712 User I/Os Reprogrammable Flash Technology • • • • 0.22µ 4LM Flash-based CMOS Process
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APA750
Abstract: GL25 4kx8 sram
Text: v3 .4 PLUS ProASIC TM Flash Family FPGAs Features and Benefits • • High Capacity I/O • • • • • 75,000 to 1 million System Gates 27k to 198kbits of Two-Port SRAM 66 to 712 User I/Os Reprogrammable Flash Technology • • • • 0.22µ 4LM Flash-based CMOS Process
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300b tube
Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM
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FBGA-11
24-SOJ-300
-SOJ-300
-TSOP2-300AF
-SOJ-300B
28-SOJ-300
28-SOJ-300A
28-SOJ-400
300b tube
90-FBGA-11
165-FBGA-1517
48-TSOP1-1220F
44-TSOP2-400BF-Lead-Free
SAMSUNG MCP
dram
0X13
SAMSUNG MCP 153
tray bga 64
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144-FBGA
Abstract: No abstract text available
Text: 144-FBGA-0909 0.08 M C 0.10 C 2X 9.00 A B 144 - Ø0.30±0.05 0.15 M C A B 0.05 M C 15 14 13 12 11 10 9 8 7 6 5 #A1 INDEX MARK 4 3 2 1 0.10 C (2X) C A B #A1 Indicator C (Datum A) 3.50 D E G H J 0.50 9.00 (15-1) X 0.50 = 7.00 (Datum B) F K L M N P R 0.50 0.20±0.05
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144-FBGA-0909
BGA-0909
144-FBGA
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MO-195
Abstract: ADS30810
Text: THIS DRAWING CONTAINS CONFIDENTIAL INFORMATION PROPRIETARY TO SEC IT MUST NOT BE REPRODUCED OR DISCLOSED TO OTHERS OR USED IN ANY OTHER WAY IN WHOLE OR PART EXCEPT AS AUTHORIZED IN WRITING BY SEC REV. DATE 000 2008.04.17 0.10 C 2X 7.00 144-Φ0.30±0.05 A
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5M-1994
MO-195
144-FBGA-07
JW-07172-O
ADS30810
MO-195
ADS30810
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gddr3
Abstract: GDDR2
Text: Date : Oct , 2003 Revision 0.0 Application Application Note Note Key Difference Between GDDR2 and GDDR3 Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San24, Nongseo-Ree, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea(R.O.K)
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San24,
gddr3
GDDR2
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1.0mm pitch BGA
Abstract: No abstract text available
Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
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CY7C093794V
CY7C093894V
CY7C09289V
CY7C09369V
CY7C09379V
CY7C09389V
FLEx18TM
64K/128K
128K/256K
CY7C0837AV
1.0mm pitch BGA
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38K30
Abstract: DELTA39K
Text: USE DELTA39K FOR Quantum38K™ ISR™ ALL NEW DESIGNS CPLD Family CPLDs Designed for Migration Features • High density — 30K to 100K usable gates — 512 to 1536 macrocells — 136 to 302 maximum I/O pins — Eight dedicated inputs including four clock pins and
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DELTA39KTM
Quantum38KTM
16-Kb
48-Kb
125-MHz
18-mm
Quantum38K30
Quantum38K50
Quantum38K
Delta39K
38K30
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advantage of using ARM controller
Abstract: ARM SRAM compiler ML67Q5003 ARM7 set associative SRAM32-KB
Text: 1 ML674K/ML675K PRODUCT INTRODUCTION SHEET- PAGE 1 July 30, 2003 LOW-COST GENERAL PURPOSE 32-BIT MCUs Description Block Schematic ML674K Series Oki’s ML674K and ML675K series are the foundation of general purpose 32-bit RISC microcontrollers featuring the industry leading ARM/Thumb architecture. Both series offer 32KB RAM, 256K and 512K
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ML674K/ML675K
32-BIT
ML674K
ML675K
33MHz
60MHz.
advantage of using ARM controller
ARM SRAM compiler
ML67Q5003
ARM7 set associative
SRAM32-KB
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Untitled
Abstract: No abstract text available
Text: Delta39K ISR™ CPLD Family CPLDs at FPGA Densities™ Features • Carry-chain logic for fast and efficient arithmetic operations • Multiple I/O standards supported — LVCMOS 3.3/3.0/2.5/1.8V , LVTTL, 3.3V PCI, SSTL2 (I-II), SSTL3 (I-II), HSTL (I-IV), and GTL+
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Delta39Kâ
64-bit
39K200-208EQFP
39K165
39K200
-233MHz
Delta39K165Z
144-FBGA
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CY7C0837AV
Abstract: CY7C09289V CY7C09369V CY7C09379V A18x
Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV PRELIMINARY FLEx18TM 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
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CY7C093794V
CY7C093894V
CY7C09289V
CY7C09369V
CY7C09379V
CY7C09389V3
64K/128K
128K/256K
CY7C0837AV
CY7C0830AV/CY7C0831AV
CY7C0837AV
A18x
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CY7C0830AV
Abstract: CY7C0831AV CY7C0832AV CY7C0833V CY7C0837AV CY7C0851 DQ0L-DQ17L
Text: CY7C0837AV, CY7C0830AV CY7C0831AV, CY7C0832AV CY7C0832BV, CY7C0833V FLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM Features Functional Description • True Dual-Ported Memory Cells that Allow Simultaneous Access of the Same Memory Location
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CY7C0837AV,
CY7C0830AV
CY7C0831AV,
CY7C0832AV
CY7C0832BV,
CY7C0833V
FLEx18TM
64K/128K
128K/256K
CY7C0830AV
CY7C0831AV
CY7C0832AV
CY7C0833V
CY7C0837AV
CY7C0851
DQ0L-DQ17L
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100K preset horizontal
Abstract: LB 124 d LB 124 transistor verilog code for implementation of eeprom 38K30 j510
Text: Quantum38K ISR™ CPLD Family PRELIMINARY CPLDs Designed for Migration Features • High density — 30K to 100K usable gates — 512 to 1536 macrocells — 136 to 302 maximum I/O pins — Eight Dedicated Inputs including four clock pins and four global I/O control signal pins; four JTAG interface pins for reconfigurability/boundary scan
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Quantum38KTM
CY38K100
208-pin
208EQFP)
Quantum38K30
Quantum38K50
Quantum38K
100K preset horizontal
LB 124 d
LB 124 transistor
verilog code for implementation of eeprom
38K30
j510
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55352
Abstract: No abstract text available
Text: 128M GDDR SDRAM K4D263238I-VC 128Mbit GDDR SDRAM Revision 1.3 November 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4D263238I-VC
128Mbit
144-Ball
55352
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PDF
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DDR2 x32
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.2 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
DDR2 x32
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Untitled
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.4 March 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
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PDF
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K4J52324Qc
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K4J52324QC
512Mbit
K4J52324Qc
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DDR RAM 512M
Abstract: K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.0 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QC-B
512Mbit
DDR RAM 512M
K4J52324QC-BC14
Hynix Cross Reference
hynix memory h9 ddr2
K4J52324Q
K4J52324QC-BJ12
mark t5n
gddr3
K4J52324QC-BC20
K4J52324QC-A
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APA1000
Abstract: actel PLL schematic AD 149 AE9 APA075 APA150 APA300 APA450 APA750 624 CCGA ACTEL proASIC PLUS APA450
Text: v5.5 ProASICPLUS ® Flash Family FPGAs Features and Benefits High Performance Routing Hierarchy • • • • High Capacity Commercial and Industrial • • • I/O 75,000 to 1 Million System Gates 27 k to 198 kbits of Two-Port SRAM 66 to 712 User I/Os
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