DCR1770F22

Abstract: DCR1110F50 DCR1110F52 DCR890F
Contextual Info: DCR1110F52 Phase Control Thyristor Preliminary Information DS5965-1 August 2010 LN27372 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 5200V 1107A 14800A 1500V/µs 800A/µs * Higher dV/dt selections available

Contextual Info: O K I Semiconductor MSM5 14800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D E S C R IP T IO N The M 14800A/ ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the M 14800A/ASL is OKI's CMOS silicon gate process

MSM514800A

Abstract: MSM514800ASL
Contextual Info: O K I Semiconductor MSM5 14800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 14800A/ ASL is a 524,288-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The M SM 14800A/ASL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The M SM 14800A/ASL is

Contextual Info: DCR1020N52 Phase Control Thyristor DS5964-2 April 2012 LN 29439 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 1018A 14800A 1500V/µs 800A/µs APPLICATIONS * Higher dV/dt selections available

Contextual Info: DCR1110F52 Phase Control Thyristor DS5965-2 March 2013 LN30243 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 5200V 1107A 14800A 1500V/µs 800A/µs * Higher dV/dt selections available

Contextual Info: DCR1020N52 Phase Control Thyristor DS5964-2 April 2012 LN 29439 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 1018A 14800A 1500V/µs 800A/µs APPLICATIONS * Higher dV/dt selections available

DCR1020N52

Contextual Info: DCR1020N52 Phase Control Thyristor DS5964-5 August 2014 LN31842 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 1018A 14800A 1500V/µs 800A/µs APPLICATIONS * Higher dV/dt selections available

DCR1110F52

Contextual Info: DCR1110F52 Phase Control Thyristor DS5965-3 August 2014 LN31843 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 5200V 1107A 14800A 1500V/µs 800A/µs * Higher dV/dt selections available

DCR1020N52

Abstract: DCR820N DCR1020N50 DCR1110N52 DCR1710
Contextual Info: DCR1020N52 Phase Control Thyristor Preliminary Information DS5964-1 July 2010 LN 27370 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 1018A 14800A 1500V/µs 800A/µs APPLICATIONS * Higher dV/dt selections available

Contextual Info: TOSHIBA 14800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The 14800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The 14800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

Contextual Info: 14800A/AL, HM51S4800A/AL Series Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi 14800A are CM OS dynamic RAM orga­ nized as 524,288-word x 8-bit. 14800A have realized higher density, higher performance and various functions by

HM514800AJ8

Abstract: HM514800AJ7 HM514800AJ-7 HM514800AJ-8 HM514800ALRR-7 HM514800ALRR-8 HM514800AZ-7 m514800 HM514800ATT8 HM514800ALJ7
Contextual Info: 14800A/AL Series HM51S4800A/AL Series Preliminary 524,288-word x 8-bit Dynamic Random Access Memory T h e H ita c h i H M 5 1 4 8 0 0 A are C M O S d y n a m ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 - w o rd x 8 -b it. H M 5 1 4 8 0 0 A have realized higher density, higher

Contextual Info: 14800A/AL, HM51S4800A/AL S 6N 6S Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi H M 14800A are C M OS dynamic RAM orga­ nized as 524,288-word x 8-bit. H M 14800A have realized higher density, higher performance and various functions by

Contextual Info: HITACHI/ LOGIC/ARRAYS/N b7E D • 44^203 0024374 14800A/AL, HM51S4800A/AL Series 7 b cl ■ HITE Preliminary 524,286-Word x 8-Bit Dynamic Random Access Memory ■ DESCRIPTION ■ FEATURES The Hitachi 14800A are CMOS dynamic RAM orga­ nized as 524,288-word x 8-bit. 14800A have realized