JB marking transistor
Abstract: transistor marking JB MMBT5550 marking JB
Text: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic
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MMBT5550
10/iA,
JB marking transistor
transistor marking JB
marking JB
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MMBT2222
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current
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1b414E
0007253M
MMBT2222
lo-10mA,
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2N6515
Abstract: 2N6516
Text: SAMSUNG SEMICONDUCTOR INC 2N6516 14E D | 7^4142 00071^ 1 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • Collector-Emitter Voltage: Vcto=300V * Collector Dlssipatioh: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic
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2N6516
625mW
2N6515
T-29-21
100mA,
20MHz
2N6515
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J551
Abstract: TS 4142 MPSH20 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1
Text: .SAMSUNG SEM ICO NDUCTOR INC 14E D | TTbMlME 0007304 S J MPSH20 7^3/- NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current
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MPSH20
T-31-Ã
100MHz
J551
TS 4142
MPSH24
S1000
sc 4145
276MH
4142 TS
I10M1
213M1
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2929 transistor
Abstract: MMBT6427 MMBTA14 SOT-23 J
Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage
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0075T1
MMBTA14
MMBT6427
T-29-29
OT-23
100jjA,
2929 transistor
SOT-23 J
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Marking KJo SOT23
Abstract: 564 transistor MMBTA43 transistor 564 marking 564 sot23-6
Text: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 14E D | 7=11,4142 00072^4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBTA43
OT-23
100hA
100hA,
MMBTA43_
Marking KJo SOT23
564 transistor
transistor 564
marking 564 sot23-6
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MARKING BL
Abstract: fS 4142 transistor 513 MMBC1622D6
Text: SAMSUNG S EMICONDUCTOR INC MMBC1622D6 14E D ^7Tt.4145 0007542 4 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Cotector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBC1622D6
100mA,
100MHz
MARKING BL
fS 4142
transistor 513
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BCW32
Abstract: MMBT5088 T2R marking marking ASE
Text: SAMSUNG SEMICONDUCTOR INC BCW32 14E D | 7 ] b i m e 0007201, 0 | NPN EPITAXIAL SILICON TRANSISTOR T-2H- ,= 1 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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BCW32
7U4142
000720b
MMBT5088
SOt-23
10fiA,
BCW32
T2R marking
marking ASE
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PN2222A EQUIVALENT
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS2222A 14E D 0 0073 06 | 8 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS2222A
T-29-21
625mW
MPS2222
PN2222A EQUIVALENT
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MMBTA06
Abstract: MPSA05 Transistor driver TRANSISTOR MARKING FA
Text: SAMSUNG SEMICONDUCTOR INC MMBTA06 14E D | 7 c! b 4 1 4 a 0007531 fi | NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Ennitter Voltage Emitter-Base Voltage Collector Current
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MMBTA06
MPSA05
OT-23
100JJA,
100mA
100mA,
100mA
100MHz
Transistor driver
TRANSISTOR MARKING FA
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KSA1182
Abstract: KSC2859
Text: SAMSUNG SEMICONDUCT OR INC KSC2859 14E D | 7^4142 OOGLI?! 1 | f.zy NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SO T-23 • Complement to KSA1182 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol ColleCtor-Base Voltage CoHector-Emftter Voltage
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KSC2859
KSA1182
OT-23
100mA
Jo03l
T-29-15
KSA1182
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MPS8098
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage
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MPS8098
625mW
T-29-21
100/iA,
100MHz
300ms,
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Darlington transistor T7 27
Abstract: Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
Text: SAMSUNG SEMICONDUCTOR INC MPSA25 14E O Jj TTbMlMt? 0007355 O | NPN EPITAXIAL - T ^ SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR • Collector-Emltter Voltage: Vc*»=40V • Collector Dissipation: Pc max =625mW A B SO LU TE MAXIMUM RATINGS (T,=25°C)
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MPSA25
625mW
Darlington transistor T7 27
Samsung s3
mpsa25
p 605 transistor equivalent
R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
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KSC2749
Abstract: npn transistors 400V 1A To92 NPN TO92 400V
Text: SAMSUNG SEM ICONDUCTOR INC KSC2749 14E 0 | 7*^4142 0007573 5 | NPN EPITAXIAL SILICON TRANSISTOR T - Ì 3 - 3 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic Rating Symbol Collector-Base Voltage Collector-Emitter Voltage
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KSC2749
GQG77fe
KSC2749
npn transistors 400V 1A To92
NPN TO92 400V
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TS 4142
Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142
Text: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage
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0075T4
T-33-
KSD288
TS 4142
LC04A
KSD73
100V transistor npn 5a
ksa814
NPN Transistor TO220 VCEO 80V 100V
SAA 1020
NPN/TS 4142
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304 TRANSISTOR
Abstract: transistor ksr1010 KSR1010 KSR2010 Inverter mma 300
Text: SAMSUNG SEMICONDUCTOR I N C T ^ W f 14E KSR1010 D I 7^4142 0007033 b | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching Circuit, Inverter, interface circuit Driver circuit • Built in bias Resistor (R =10K i)
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INCT-35
KSR1010
KSR2010
INCy-35^
304 TRANSISTOR
transistor ksr1010
KSR2010
Inverter mma 300
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la 4142
Abstract: MMBT5088 MMBT6429 Scans-0014323
Text: SAMSUNG SEMI C ONDU CT OR INC 14E MMBT6429 ' D § 7 ^ t , 41 42 0007507 4 | NPN EPITAXIAL SILICON TRANSISTOR : " AMPLIFIER TRANSISTOR r'r-avfl" SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoUector-Emltter Voltage Emitter-Base Voltage
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00072fi7
MMBT6429
MMBT5088
OT-23
100mA,
100MHz
la 4142
Scans-0014323
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equivalent of SL 100 NPN Transistor
Abstract: Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"
Text: SAMSUNG SEMICONDUCTOR 14E INC D » 711, 4142 OOOTbSO fl NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5005 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage
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KSD5005
GQG77fe
equivalent of SL 100 NPN Transistor
Transistor
transistor a 92 a 331
transistor 711
"SAMSUNG SEMICONDUCTOR"
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SE 135
Abstract: SE135 ic 74142 E10*A
Text: S AM S UNG SEMICONDUCTOR INC MMBC1623L5 14E D 7^ 4142 000754*1 7 | NPN EPITAXIAL SILICON TRANSISTOR T - - A 9 - (<? AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C C haracteristic Collector-Base Voltage Collector-Emitter Voltage .Emitter-Base Voltage
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MMBC1623L5
OT-23
MMBC1623L3
SE 135
SE135
ic 74142
E10*A
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2929 transistor
Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
Text: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic
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00073SM
MPSA26
T-29-29
625mW
MPSA25
MPSA62
100/iA,
100mA,
2929 transistor
mpsa82
MPSA45
MPSA55
MPSA63
I0204
625MW
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MPS2222
Abstract: MPS2222A PN2222A
Text: SA MS UN G SEMICONDUCTOR INC MPS2222A 14E D | 7*14,4142 00D730fl 8 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Coilector-Emitter Vtaltaga: V«o=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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00D730fl
MPS2222A
625mW
MPS2222
T-29-21
150mA,
500mA,
PN2222A
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MI CONDUCT OR INC MMBR5179 14E D 0 007255 7 [ X’ ff-f? NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE M AXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage [ Collector-Emitter Voltage ! Emitter-Base Voltage
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MMBR5179
OT-23
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMI CONDUCTOR INC MMBT6429 ' 14E D § 7^t,4142 0007507 4 | NPN EPITAXIAL SILICON TRANSISTOR " r T -.a • c\ w^ : AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoUector-Emltter Voltage Emitter-Base Voltage
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MMBT6429
OT-23
MMBT5088
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 1 14E D I 7 % ^ ^ 0007710 I : t - MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High C urrent Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (T«=25°C)
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MJE3055T
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