sot-23 Marking M1F

Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
Contextual Info: MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage

Contextual Info: MMBT5550 NPN General Purpose Amplifier • This device is designed for generalpurpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking: 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T a Symbol VCEO = 25°C unless otherwise noted

Contextual Info: MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5550 TRANSISTOR NPN SOT–23 FEATURES  High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit

Contextual Info: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc 3

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage

JB marking transistor

Abstract: transistor marking JB MMBT5550 marking JB
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic

Contextual Info: Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH MMBT5551GH 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS

2SC9830

Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)

Contextual Info: RECTRON SEMICONDUCTOR MMBT5550LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation 0.225 W(Tamb=25OC) PCM: * Collector current 0.6 A ICM: * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range

Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160

MMBT5551LT1G

Abstract: sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G
Contextual Info: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550RLT1 MMBT5551RLT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage

MMBT5551

Abstract: MMBT5551 G1 1N914 MMBT5550
Contextual Info: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551

MMBT5550

Contextual Info: MCC TM Micro Commercial Components MMBT5550
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • NPN Plastic Encapsulate Transistor Halogen free available upon request by adding suffix "-HF"

sot-23 Marking M1F

Abstract: MMBT5550 nt1005 M1F SOT23
Contextual Info: BL Galaxy Electrical Production specification NPN General Purpose Amplifier MMBT5550 FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free APPLICATIONS z High voltage transistors. z General purpose application. SOT-23

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1* High Voltage Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage

Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5

MMBT5551LT1

Abstract: motorola S MMBT5551 G1 MMBT5550
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage T ransistors MMBT5550LT1 MMBT5551LT1* NPN Silicon ‘Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc

MMB5551

Abstract: mmt5551 1BT55 MMBT5550 MMBT5551 T5551 MVBT5551
Contextual Info: MMBT5550 MMBT5551 High Voltage NPN Transistors E M IT E l M A X IM U M RATINGS Rating Col icdoi bmilitr Voilage Cofadof-Bastì voltage tmiLlûr Uaùü voilage Cül ICOlûr Cufrûril COMLiriutj S Symbol Vali.p V C EO vceo VEBO ic HO L6D 6.0 6DD Unit Vdc Vdc

Contextual Info: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5550LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage

1N914

Abstract: mmbt5550 MMBT5551-G MMBT5550-G
Contextual Info: Zowie Technology Corporation High Voltage Transistors Lead free product FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550G MMBT5551G 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value