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    MMBT5551L Price and Stock

    onsemi MMBT5551LT1G

    TRANS NPN 160V 0.6A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT5551LT1G Cut Tape 512,353 1
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    MMBT5551LT1G Digi-Reel 512,353 1
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    MMBT5551LT1G Reel 510,000 3,000
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    MMBT5551LT1G Reel 0 Weeks, 2 Days 41,667
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    MMBT5551LT1G Ammo Pack 17 Weeks, 1 Days 1
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    MMBT5551LT1G Reel 55 Weeks, 2 Days 3,000
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    MMBT5551LT1G Reel 10 Weeks 60,000
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    Mouser Electronics MMBT5551LT1G 212,010
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    Verical MMBT5551LT1G 195,000 3,000
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    MMBT5551LT1G 26,840 14,085
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    Arrow Electronics MMBT5551LT1G 2,868,000 10 Weeks 3,000
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    MMBT5551LT1G 105,000 10 Weeks 3,000
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    MMBT5551LT1G Cut Strips 17,355 10 Weeks 1
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    Newark MMBT5551LT1G Cut Tape 305,448 1
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    MMBT5551LT1G Reel 21,000 3,000
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    MMBT5551LT1G Cut Tape 2,455 1
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    Onlinecomponents.com MMBT5551LT1G 195,000
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    Bristol Electronics MMBT5551LT1G 30,749
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    MMBT5551LT1G 7,083 45
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    Quest Components MMBT5551LT1G 372
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    MMBT5551LT1G 372
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    Rochester Electronics MMBT5551LT1G 26,840 1
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    TME MMBT5551LT1G 801 1
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    Ameya Holding Limited MMBT5551LT1G 120
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    ComSIT USA MMBT5551LT1G 59,236
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    Avnet Asia MMBT5551LT1G 10 Weeks 60,000
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    Avnet Silica MMBT5551LT1G 11 Weeks 3,000
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    Component Electronics, Inc MMBT5551LT1G 3,763
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    EBV Elektronik MMBT5551LT1G 57,000 12 Weeks 3,000
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    Master Electronics MMBT5551LT1G 195,000
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    New Advantage Corporation MMBT5551LT1G 6,018,000 1
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    Win Source Electronics MMBT5551LT1G 168,000
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    onsemi MMBT5551LT3G

    TRANS NPN 160V 0.6A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT5551LT3G Digi-Reel 30,705 1
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    MMBT5551LT3G Cut Tape 30,705 1
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    MMBT5551LT3G Reel 30,000 10,000
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    Avnet Americas MMBT5551LT3G Reel 10,000 10 Weeks 50,000
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    Mouser Electronics MMBT5551LT3G 23,471
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    Verical MMBT5551LT3G 50,000 10,000
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    Arrow Electronics MMBT5551LT3G Cut Strips 47,000 10 Weeks 1
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    Newark MMBT5551LT3G Reel 20,000
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    Chip1Stop MMBT5551LT3G Cut Tape 8,206
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    EBV Elektronik MMBT5551LT3G 12 Weeks 10,000
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    Master Electronics MMBT5551LT3G 50,000
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    onsemi SMMBT5551LT3G

    TRANS NPN 160V 0.6A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMMBT5551LT3G Digi-Reel 13,074 1
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    SMMBT5551LT3G Cut Tape 13,074 1
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    SMMBT5551LT3G Reel 10,000
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    Mouser Electronics SMMBT5551LT3G 13,965
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    Rochester Electronics SMMBT5551LT3G 35 1
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    Avnet Silica SMMBT5551LT3G 10,000 11 Weeks 10,000
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    EBV Elektronik SMMBT5551LT3G 12 Weeks 10,000
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    Master Electronics SMMBT5551LT3G
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    New Advantage Corporation SMMBT5551LT3G 10,000 1
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    onsemi SMMBT5551LT1G

    TRANS NPN 160V 0.6A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMMBT5551LT1G Digi-Reel 9,814 1
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    SMMBT5551LT1G Cut Tape 9,814 1
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    SMMBT5551LT1G Reel 9,000 3,000
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    Mouser Electronics SMMBT5551LT1G 1,089
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    Newark SMMBT5551LT1G Reel 9,000
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    Bristol Electronics SMMBT5551LT1G 17,136
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    SMMBT5551LT1G 2,911
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    Rochester Electronics SMMBT5551LT1G 1,230,000 1
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    Avnet Asia SMMBT5551LT1G 10 Weeks 30,000
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    Master Electronics SMMBT5551LT1G 24,000
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    Win Source Electronics SMMBT5551LT1G 122,000
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    Rochester Electronics LLC MMBT5551LT1H

    SS SOT23 HV XSTR NPN 160V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT5551LT1H Bulk 11,539
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    MMBT5551L Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT5551L On Semiconductor Small Signal NPN Original PDF
    MMBT5551LT1 Avic Electronics SOT-23 Plastic-Encapsulate Transistors Original PDF
    MMBT5551LT1 Leshan Radio Company High Voltage Transistors(NPN Silicon) Original PDF
    MMBT5551LT1 Motorola Silicon NPN Transistor Original PDF
    MMBT5551LT1 On Semiconductor Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT5551LT1 On Semiconductor Small Signal NPN Original PDF
    MMBT5551LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar, NPN, High voltage, 160V (BR), 50mA, Pkg Style SOT23 Scan PDF
    MMBT5551LT1G On Semiconductor Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT5551LT1G On Semiconductor Small Signal NPN Original PDF
    MMBT5551LT3 On Semiconductor Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 Original PDF
    MMBT5551LT3 On Semiconductor Small Signal NPN Original PDF
    MMBT5551LT3 On Semiconductor High Voltage Transistor NPN Original PDF
    MMBT5551LT3G On Semiconductor Original PDF
    MMBT5551LT3G On Semiconductor Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 Original PDF
    MMBT5551L-X-AE3-6-R Unisonic Technologies HIGH VOLTAGE SWITCHING TRANSISTOR Original PDF

    MMBT5551L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-23 Marking M1F

    Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
    Text: MMBT5550L, MMBT5551L, MMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements


    Original
    PDF MMBT5550L, MMBT5551L, SMMBT5551L AEC-Q101 MMBT5550 MMBT5551, SMMBT5551 sot-23 Marking M1F SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l

    MMBT5551L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G „ ORDERING INFORMATION Normal MMBT5551-x-AE3-R


    Original
    PDF MMBT5551 MMBT5551L MMBT5551G MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010 MMBT5551L

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage


    Original
    PDF MMBT5550LT1 MMBT5551LT1 236AB) 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550L, MMBT5551L, MMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements


    Original
    PDF MMBT5550L, MMBT5551L, SMMBT5551L MMBT5550 MMBT5551, SMMBT5551 MMBT5550LT1/D

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc 3


    Original
    PDF MMBT5550LT1 MMBT5551LT1 236AB)

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
    Text: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage


    Original
    PDF MMBT5550LT1 MMBT5551LT1 MMBT5551LT1 r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551

    MMBT5551LT1

    Abstract: No abstract text available
    Text: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage


    Original
    PDF MMBT5551LT1 OT-23 100MHz 15kHZ MMBT5551LT1

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


    Original
    PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D

    MMBT5551LT1

    Abstract: No abstract text available
    Text: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage


    Original
    PDF MMBT5551LT1 OT-23 100MHz 15kHZ MMBT5551LT1

    MMBT5551LT1G

    Abstract: sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G
    Text: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage


    Original
    PDF MMBT5550LT1G, MMBT5551LT1G MMBT5550 MMBT5551 MMBT5550LT1/D MMBT5551LT1G sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5551LT1 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM: 0.6


    Original
    PDF OT-23 MMBT5551LT1 MMBT5551LT1 100MHz

    1N914 SOT-23

    Abstract: MMBT550LT1
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160


    Original
    PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 OT-23-3 1N914 SOT-23 MMBT550LT1

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
    Text: ON Semiconductort MMBT5550LT1 MMBT5551LT1* High Voltage Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage


    Original
    PDF MMBT5550LT1 MMBT5551LT1* r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1

    MMBT5551

    Abstract: MMBT5551L
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G „ ORDERING INFORMATION Normal MMBT5551-x-AE3-R


    Original
    PDF MMBT5551 MMBT5551L MMBT5551G MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010 MMBT5551 MMBT5551L

    transistor 25

    Abstract: transistor mmbt5551lt1
    Text: MMBT5551LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW Ta=25℃ * Collector-Emitter Voltage :Vceo=160V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


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    PDF MMBT5551LT1 225mW OT-23 transistor 25 transistor mmbt5551lt1

    sot-23 Marking G1

    Abstract: MMBT5551LT1
    Text: @vic SOT-23 Plastic-Encapsulate Transistors MMBT5551LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.6 A Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range


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    PDF OT-23 MMBT5551LT1 OT-23 100MHz MMBT5551LT1 sot-23 Marking G1

    sot-23 Marking M1F

    Abstract: MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3
    Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5550 MMBT5551 Collector −Base Voltage


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    PDF MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D sot-23 Marking M1F MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3

    Untitled

    Abstract: No abstract text available
    Text: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage


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    PDF MMBT5551LT1 OT-23 100MHz 15kHZ

    On semiconductor date Code sot-23

    Abstract: IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23
    Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Value VCEO MMBT5550 MMBT5551 Collectorā-āBase Voltage


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    PDF MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D On semiconductor date Code sot-23 IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


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    PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1G MMBT5551LT3 5551 SOT-23

    MMBT5551LT1

    Abstract: motorola S MMBT5551 G1 MMBT5550
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage T ransistors MMBT5550LT1 MMBT5551LT1* NPN Silicon ‘Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc


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    PDF MMBT5550LT1 MMBT5551LT1* --236AB) MMBT5551LT1 MMBT5551LT1 motorola S MMBT5551 G1 MMBT5550

    MBT5551LT1

    Abstract: MBT5551L T0236AB
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage


    OCR Scan
    PDF MMBT5550LT1 MMBT5551LT1* T0-236AB) 225rola MBT5550LT1 MBT5551LT1 1N914 MBT5551LT1 MBT5551L T0236AB

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Symbol Value Unit C o llector-E m itter Voltage Rating v CEO 140 Vdc Collector-Base Voltage v CBO 160 Vdc Em itter-Base Voltage Vebo 6.0 Vdc ic 600 m Adc C ollector C urrent — Continuous MMBT5550LT1 MMBT5551LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB


    OCR Scan
    PDF MMBT5550LT1 MMBT5551LT1* OT-23 O-236AB) MBT5550 MMBT5551 MMBT5550

    Untitled

    Abstract: No abstract text available
    Text: SyrnSEM i SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5551LT1 TRANSISTOR NPN FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage V ( b r ) cbo : 180 V Operating and storage junction temperature range


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    PDF MMBT5551LT1 MMBT5551LTl