Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    14MMX Search Results

    SF Impression Pixel

    14MMX Price and Stock

    OMRON Corporation RED BAR LIGHT 314MM X 16MM

    RED BAR LIGHT 314MM X 16MM - Bulk (Alt: CCSLDL2314X16RDWD)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RED BAR LIGHT 314MM X 16MM Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    OMRON Corporation RED BAR LIGHT 314MM X 30MM

    - Bulk (Alt: CCSLDL2314X30RD2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RED BAR LIGHT 314MM X 30MM Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    O-RINGS 14MMX1.5MMS70

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bisco Industries 14MMX1.5MMS70 14
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Ham-Let Group 768LSS14MMX1/2

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 768LSS14MMX1/2 6
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Ham-Let Group 769L-SS-14MMX1/2

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 769L-SS-14MMX1/2 6
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    14MMX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC358700XBG

    Abstract: TC35285 superflash 2006 cmos ram i2c lcd toshiba lvds LQFP80 QFP80 TC35285XBG TMP86FS28DFG TMP86FS28FG
    Text: EYE 05 May 2006 東芝半導体情報誌アイ 2006年5月号 VOLUME 166 CONTENTS INFORMATION 新製品情報 フラッシュメモリ内蔵8ビットマイクロコントローラ .2


    Original
    300mm TMP86FS28FG/DFG QFP80 LQFP80 TMP86FS28FG TMP86FS28DF TC358700XBG TC35285 superflash 2006 cmos ram i2c lcd toshiba lvds TC35285XBG TMP86FS28DFG TMP86FS28FG PDF

    Untitled

    Abstract: No abstract text available
    Text: TinyPowerTM A/D Type with LCD 8-Bit OTP MCU HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 Revision: V1.40 Date: ���������������� October 31, 2013 HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 TinyPowerTM A/D Type with LCD 8-Bit OTP MCU


    Original
    HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 PDF

    Untitled

    Abstract: No abstract text available
    Text: EM78P468NB/P470N 8-Bit Microcontroller Product Specification DOC. VERSION 1.2 ELAN MICROELECTRONICS CORP. November 2012 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.


    Original
    EM78P468NB/P470N QFP-44L QFP44 EM78P470NQ44 44-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM HT67F30/HT67F40/HT67F50/HT67F60 Revision: V1.90 Date: ����������������� December 19, 2013 HT67F30/HT67F40/HT67F50/HT67F60 TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM


    Original
    HT67F30/HT67F40/HT67F50/HT67F60 PDF

    OS10

    Abstract: USB2229 MA13 MA12
    Text: USB2229/USB2230 5th Generation Hi-Speed USB Flash Media and IrDA Controller with Integrated Card Power FETs PRODUCT FEATURES Datasheet IrDA Controller „ IrDA v1.1 FIR and SIR Compliant Controller, with 9.6K, 19.2K, 38.4K, 57.6K, 115.2K, 0.576Mbps, 1.152Mpbs and 4Mbps data rate support.


    Original
    USB2229/USB2230 576Mbps, 152Mpbs A16/ROMEN GPIO10 GPIO11 GPIO12 OS10 USB2229 MA13 MA12 PDF

    WED8L24257V

    Abstract: DSP5630X
    Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original
    WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL DSP5630X PDF

    gw 360

    Abstract: No abstract text available
    Text: EDI2GG432128V 4x128Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x128Kx32 Synchronous The EDI2GG432128VxxD is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts Module, organized as 4x128Kx32. The Module contains four (4) Synchronous Burst Ram Devices,


    Original
    EDI2GG432128V 4x128Kx32 EDI2GG432128VxxD 4x128Kx32. 14mmx20mm EDI2GG432128V95D* EDI2GG432128V10D* EDI2GG432128V11D EDI2GG432128V12D gw 360 PDF

    128*64

    Abstract: transistor GW 93 H GW 94 H
    Text: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address


    Original
    EDI2KG464128V 4x128Kx64, 4x128Kx64 EDI2KG64128VxxD 01581USA EDI2KG464128V 128*64 transistor GW 93 H GW 94 H PDF

    K7P801866M

    Abstract: SA12 SA13
    Text: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999


    Original
    K7P803666M K7P801866M 256Kx36 512Kx18 K7P80186SRAM K7P801866M SA12 SA13 PDF

    Untitled

    Abstract: No abstract text available
    Text: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original
    K7P323674C K7P321874C 1Mx36 2Mx18 119BGA PDF

    WED8L24513V

    Abstract: No abstract text available
    Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original
    WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL PDF

    EDI2AG272129V

    Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
    Text: EDI2AG272129V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, organized as 2x128Kx72. The Module contains four (4) Synchronous Burst


    Original
    EDI2AG272129V 2x128Kx72, 2x128Kx72 EDI2AG272129VxxD1 2x128Kx72. 14mmx20mm s129V EDI2AG272129V85D1* EDI2AG272129V9D1* EDI2AG272129V10D1 EDI2AG272129V GW CSSRM1.PC-MFNQ-5C7E-1-700-R18 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,


    Original
    EDI2GG418128V 4x128Kx18, 4x128Kx18 EDI2GG418128VxxD2 4x128Kx64. 14mmx20mm EDI2GG418128V95D* EDI2GG418128V10D* 4x128Kx18 PDF

    DIMM_200

    Abstract: No abstract text available
    Text: EDI2GG46464V 4x64Kx64, 3.3V Synchronous SRAM CARD EDGE DIMM FEATURES • 4x64Kx64 Synchronous The EDI2GG46464VxxD is a Synchronous SRAM, 60 position Dual Key; Card Edge DIMM 120 contacts Module, organized as 4x64Kx64. The Module contains eight (8) Synchronous Burst


    Original
    EDI2GG46464V 4x64Kx64, 4x64Kx64 EDI2GG46464VxxD 4x64Kx64. 14mmx20mm EDI2GG46464V95D* EDI2GG46464V10D EDI2GG46464V11D EDI2GG46464V12D DIMM_200 PDF

    WED2DG472512V-D2

    Abstract: No abstract text available
    Text: WED2DG472512V-D2 16MB 4x512Kx72 SYNC BURSTPIPELINE, DUAL KEY DIMM ADVANCED* FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FIG. 1 4x512Kx72 Synchronous, Synchronous Burst Pipeline Architecture; Single Cycle Deselect


    Original
    WED2DG472512V-D2 4x512Kx72) 4x512Kx72 WED2DG472512V5D2 200MHz WED2DG472512V6D2 166MHz WED2DG472512V65D2 150MHz WED2DG472512V7D2 WED2DG472512V-D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: K7P803611M K7P801811M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999


    Original
    K7P803611M K7P801811M 256Kx36 512Kx18 K7P80181SRAM PDF

    A13L

    Abstract: IDT709269 IDT709269S
    Text: PRELIMINARY IDT709269S/L HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.


    Original
    IDT709269S/L 9/12/15ns IDT709269S 950mW IDT709269L A13L IDT709269 IDT709269S PDF

    GW 94 H

    Abstract: EDI2CG472128VxxD2 transistor GW 93 H EDI2CG472128V
    Text: White Electronic Designs EDI2CG472128V ADVANCED* 4 Megabyte Sync/Sync Burst, Dual Key DIMM DESCRIPTION FEATURES The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module


    Original
    EDI2CG472128V EDI2CG472128VxxD2 4x128Kx72. 14mmx20mm EDI2CG472128V85D2* 4x128Kx72 EDI2CG472128V10D2* EDI2CG472128V12D2 GW 94 H transistor GW 93 H EDI2CG472128V PDF

    GW 94 H

    Abstract: A015 EDI2GG464128V ICC3-400
    Text: White Electronic Designs EDI2GG464128V 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES DESCRIPTION 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight


    Original
    EDI2GG464128V 4x128Kx64 EDI2KG64128VxxD 4x128Kx64. 14mmx20mm mem050) GW 94 H A015 EDI2GG464128V ICC3-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Preliminary specification release Mar. 1999 Preliminary Rev. 1.0 - Final specification release


    Original
    K7P803666M K7P801866M 256Kx36 512Kx18 PDF

    Untitled

    Abstract: No abstract text available
    Text: K7P163612M K7P161812M 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Register-Latch Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Initial Document Aug. 2000 Advance Rev. 1.0 - V DDQ Min. changed to 1.4V - Package thermal characteristics added.


    Original
    K7P163612M K7P161812M 512Kx36 1Mx18 27x16 PDF

    IP60G

    Abstract: sg07 V1625 MP5004-3 MP5004 fuse 13A Volex S-G-07 molded connector marking ADO
    Text: DRAWING N UM BER: REVISION 1000201 H C A B LE CUTTING 15~18 CABLE SO UR CE : 1. GAO HtNG<SHENZHEN . 2. TONG YUAN SHENZHEN). 4 ± i3 . TA HSING(SHENZHEN) a 2 Q 5 0 ± 10 ASSEM BLY NEUTRAL(BLUE) LIVE(BROWN) —s/nnD—[*“T»—— t n_E • 170i§5 N ot«9 :


    OCR Scan
    -ENG-057-FM010 415X245MM OL-ENG-0S7-FM012 IP60G sg07 V1625 MP5004-3 MP5004 fuse 13A Volex S-G-07 molded connector marking ADO PDF

    Untitled

    Abstract: No abstract text available
    Text: ma EDI2GG43264V 1Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS. INC. 4x64Kx32, 3.3V Module Features Sync/Sync Burst Flow-Through 4x64Kx32 Synchronous The EDI2KG43264VxxD is a Synchronous SRAM, 60 position, Card Edge DIMM 120 contacts Module, orga­


    OCR Scan
    EDI2GG43264V 4x64Kx32, 4x64Kx32 EDI2KG43264VxxD 4x64Kx32. 14mmx20mm EDI2GG43264V PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG472256V 8 Megabyte Sync/Sync Burst, Dual Key DIMM ELECTRONIC DESIGNS. INC. 4x256Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 4x256Kx72 Synchronous, Synchronous Burst The EDI2CG472256VxxD2 is a Synchronous/Synchro­ nous Burst SRAM, 84 position Dual Key; Double High


    OCR Scan
    EDI2CG472256V 4x256Kx72, 4x256Kx72 EDI2CG472256VxxD2 4x256Kx72. 14mmx20mm EDI2CG472256V PDF