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    WED8L24257V

    Abstract: DSP5630X
    Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL DSP5630X

    WED8L24258V

    Abstract: No abstract text available
    Text: WED8L24258V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24258VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24258V 256Kx24 256Kx24 WED8L24258VxxBC 256Kx8 WED8L24258V DSP5630x WED8L24258V10BC WED8L24258V12BC WED8L24258V15BC

    DSP5630X

    Abstract: No abstract text available
    Text: EDI8L24257V Asynchronous, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The EDI8L24257VxxBC is a 3.3V, three megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24257V is


    Original     		PDF EDI8L24257V 256Kx24 256Kx24 MO-163) DSP5630xT EDI8L24257VxxBC 256Kx8 EDI8L24257V DSP5630X

    WED8L24258V

    Abstract: No abstract text available
    Text: WED8L24258V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The WED8L24258VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24258V 256Kx24 256Kx24 WED8L24258VxxBC 256Kx8 WED8L24258V DSP5630x WED8L24258V10BC WED8L24258V12BC WED8L24258V15BC

    AS 15 -g

    Abstract: WED8L24257V
    Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL AS 15 -g

    7665

    Abstract: MO-47AE
    Text: EDI8L24128V 128Kx24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 12 and 15ns • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic


    Original     		PDF EDI8L24128V 128Kx24 MO-47AE) EDI8L24128V no8V15AC MO-47AE 7665 MO-47AE

    truth table Static Random Access Memory SRAM

    Abstract: EDI8L24128C MO-47AE
    Text: EDI8L24128C 128Kx24 SRAM Module ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Random Access Memory Array • Fast Access Times: 15, 17, and 20 • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic


    Original     		PDF EDI8L24128C 128Kx24 128Kx32 MO-47AE) EDI8L24128C EDI8L24128C20AC EDI8L24128C15AC EDI8L24128C17AC truth table Static Random Access Memory SRAM MO-47AE

    MO-47AE

    Abstract: DSP96002 EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C 512Kx48
    Text: EDI8L32256C 256Kx32 SRAM Module 256Kx32, 5V Static Ram Features 256Kx32 bit CMOS Static DSP Memory Solution • Texas Instruments TMS320C3x, TMS320C4x • Analog SHARCTM DSP • Motorola DSP96002 Random Access Memory Array • Fast Access Times: 15, 17, 20 and 25ns


    Original     		PDF EDI8L32256C 256Kx32 256Kx32, TMS320C3x, TMS320C4x DSP96002 MO-47AE EDI8L32256C MO-47AE DSP96002 EDI8L24128C EDI8L32128C EDI8L32512C EDI8L3265C 512Kx48

    GS71116AU-10E

    Abstract: U12E AR 8316 GS816 bga 388 GS74116ATP-10E TQFP TQFP 100 PACKAGE GS71108A GS71116A
    Text: Automotive Temperature Options Available! GSI Technology, a longtime vanguard in the SRAM market, is again leading the industry in customer-focused manufacturing by offering you EVEN MORE.SRAMs specifically designed for your temperature specification needs! We are now producing SRAMs in extended temperature


    Original     		PDF GS864xZ36 GS71116AU-10E U12E AR 8316 GS816 bga 388 GS74116ATP-10E TQFP TQFP 100 PACKAGE GS71108A GS71116A

    EDI8L32128V

    Abstract: EDI8L32512V MO-47AE TMS320LC31
    Text: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to


    Original     		PDF EDI8L32256V 256Kx32 256Kx32 EDI8L32256V TMS320LC31, 512Kx16. 512Kx48 256Kx24s EDI8L24256V) EDI8L32128V EDI8L32512V MO-47AE TMS320LC31

    MC68HC705 programmer

    Abstract: DSP56002ADSA DSP56002EVM DSP56000CLASA DSP56000 DSP56100 DSP96000 DSP96002 DSP56004ADSA DSP96002 APPLICATIONS
    Text: Order this document by DSPTOOLSP/D Rev. 2 MOTOROLA SEMICONDUCTOR ADM ADS CC PRODUCT INFORMATION Product Brief CLAS COMMAND EVM HOST DSP Development Tools Motorola offers a full line of hardware and software Digital Signal Processor DSP development tools to facilitate the development and debugging of user applications and


    Original     		PDF 16-bit DSP56100 24-bit DSP56000 32-bit DSP96000 MC68HC705 programmer DSP56002ADSA DSP56002EVM DSP56000CLASA DSP96002 DSP56004ADSA DSP96002 APPLICATIONS

    DSP96002

    Abstract: EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C MO-47AE block diagram of of TMS320C4X
    Text: EDI8L32256C Features 256Kx32, 5V Static Ram T NO The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. The device is available with access times of 15, 17, 20 and 25ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to


    Original     		PDF EDI8L32256C 256Kx32, EDI8L32256C 256Kx32 TMS320C30/31 320C32 TMS320C4x DSP96002 512Kx16. 512Kx48 EDI8L24128C EDI8L32128C EDI8L32512C EDI8L3265C MO-47AE block diagram of of TMS320C4X

    cd 5151

    Abstract: 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 EDI8L32256V ADSP2106XL
    Text: EDI8L32256V T NO 256Kx32 SRAM FEATURES n 256Kx32 bit CMOS Static The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. n DSP Memory Solution


    Original     		PDF EDI8L32256V 256Kx32 EDI8L32256V 21060L 21062L TMS320LC31 512Kx16BS2\ cd 5151 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 ADSP2106XL

    12v 50 watt subwoofer circuit diagram

    Abstract: lattice isp2064ve 50 watt subwoofer circuit diagram 500 watt audio subwoofer isp2064ve 800 watt subwoofer circuit diagram 100 watt subwoofer circuit diagram BBOPA2134UA 500 watt subwoofer circuit diagram isp2064
    Text: DSP5636XEVMUM/AD 02/01 REV # 1.0 DSP5636XEVM User’s Manual Motorola, Incorporated Semiconductor Products Sector 6501 William Cannon Drive West Austin, TX 78735-8598 This document and other documents can be viewed on the World Wide Web at the following URL:


    Original     		PDF DSP5636XEVMUM/AD DSP5636XEVM DSP56300 DSP563xx MC68HC711E20, RS-232 12v 50 watt subwoofer circuit diagram lattice isp2064ve 50 watt subwoofer circuit diagram 500 watt audio subwoofer isp2064ve 800 watt subwoofer circuit diagram 100 watt subwoofer circuit diagram BBOPA2134UA 500 watt subwoofer circuit diagram isp2064

    Untitled

    Abstract: No abstract text available
    Text: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP


    OCR Scan     		PDF ED/8L322S6V 25SKx32 256KX32 21060L 21062L TMS320LC31 MO-47AE EDI8L32256V EDI8L32256V20AC

    Untitled

    Abstract: No abstract text available
    Text: WDI EDI8L24128V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC ADVANCED 128Kx24 CMOS High Speed Static RAM F e a tu re s The EDI8L24128V is a high speed, 3.3 volt, high perform­ ance, three megabit density Static RAM organized as a 128Kx24 bit array. Fully asynchronous circuitry is used, requiring no clocks or


    OCR Scan     		PDF EDI8L24128V 128KX24 MO-47AE) MO-47AE

    dram zip 256kx16

    Abstract: No abstract text available
    Text: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5


    OCR Scan     		PDF DPS1MS16P/XP 150ns, DPS512S8H4 DPS512S8P/Pt/PLL DPS512S8Ü DPS256X24P DPS256S32W DPS256X32L/W 512Kx16, 256Kx32 dram zip 256kx16

    1MX32

    Abstract: No abstract text available
    Text: WDl Table of Contents ELECTRONIC DESIGNS INC. T h is abbrcvialed dula book i.s intended as a supplem ent to E D I’s D atabook '93. All new products, not included in that issue, are identified by the sym bol show n here. rrh e product descriptions, pinouts, block diagram s


    OCR Scan     		PDF 128Kx24 128KX32 ED48F3212SB EW8F32128C-20n* EW8L32128C EDI9F3420C-100n* 512Kx8 ECH8F8512C-20ns 256Kx16 8F1625 1MX32

    l6sr

    Abstract: No abstract text available
    Text: WDI Table of Contents ELECTRONIC DESIGNS INC ^ l i s abbreviated data book is intended as a supplennent to EDI's Databook '93. All new products, not included in that issue, are identified by the symbol shown here. The product descriptions, pinouts, block diagrams


    OCR Scan     		PDF 47-54Kx24 128KX32 EDI8F32128B-12na EDI8F32128C-20ns EOI8L32128C-15na 32Kx16 512Kx8 EDI8FB512C-20ns 256Kx16 EW8F16256C-20ns l6sr

    256kx32

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
    Text: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP


    OCR Scan     		PDF EDI8L32256V 256Kx32 21060L ADSP-21062L TMS320LC31 MO-47AE EDI8L32256V avai8L32256V15AC ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Theta-J

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8L32256C 256KX32 SRAM Module ELECTRONIC DESIGNS, INC 256Kx32,5V Static Ram ¡Features The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. 256Kx32 bit CMOS Static The device is available with access times of 15,17, 20and 25ns, allowing the creation of a no wait state DSP memory


    OCR Scan     		PDF EDI8L32256C 256KX32 EDI8L32256C 20and TMS320C3x, TMS320C4x DSP96002

    Untitled

    Abstract: No abstract text available
    Text: WDI EDI8L24128V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC ADVANCED 128Kx24 CMOS High Speed Static RAM Features The EDI8L24128V is a high speed, 3.3 volt, high perform­ ance, three megabit density Static RAM organized as a 128Kx24 bit array. Fully asynchronous circuitry is used, requiring no clocks or


    OCR Scan     		PDF EDI8L24128V 128KX24 EDI8L24128V EDI8L24128V, I8L24128V EDI8L24128VRev.

    MO-47AE

    Abstract: No abstract text available
    Text: ^EDI E D I8 L 2 4 1 2 8 V ELECTRONIC DESIGNS. INC. | 128KX24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features The EDI8L24128V is a high speed, 3.3 volt, high perform­ 128Kx24 bit CMOS Static ance, three megabit density Static RAM organized as a


    OCR Scan     		PDF EDI8L24128V 128KX24 MO-47AE) EDI8L24128V EDI8L24128V12AC MO-47AE

    PS1M

    Abstract: 36PIN 32 PIN
    Text: R E F E R E N C E SIZE SHAM PART N U M B E R 4 Megabit 6 Megabit 8 Megabit 9 Megabit SIZE \ I O R G A N IZ A T IO N SPEED ns 256Kx8 25, 35, 45, 55, 70 32-Pin DIP 47 32-Pin 32-Pin 36-Pin 36-Pin SOJ SOL SOJ SOL 53 PACKAG E PAGE I I' K ( ) I ) 11 ( I DPS256S8AP


    OCR Scan     		PDF DPS256S8AP DPS256S8EJ4 DPS256S8EL4 DPS256S8RJ4 DPS256S8RL4 DPS256S8P DPS256S8PL DPS256S8PLL DPS512S8AP DPS512S8EI4 PS1M 36PIN 32 PIN