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    EDI8L24128V Search Results

    EDI8L24128V Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EDI8L24128V12AC White Electronic Designs 128Kx24 CMOS High Speed Static RAM Original PDF
    EDI8L24128V12BC White Electronic Designs 128Kx24 SRAM 3.3 Volt Original PDF
    EDI8L24128V15AC White Electronic Designs 128Kx24 CMOS High Speed Static RAM Original PDF

    EDI8L24128V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7665

    Abstract: MO-47AE
    Text: EDI8L24128V 128Kx24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 12 and 15ns • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic


    Original     		EDI8L24128V 128Kx24 MO-47AE) EDI8L24128V no8V15AC MO-47AE 7665 MO-47AE PDF

    EDI8L24129V

    Abstract: No abstract text available
    Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution


    Original     		EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L EDI8L24129V, PDF

    MO-47AE

    Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and


    Original     		EDI8L32512V 512Kx32 ADSP-21062L TMS320LC31 EDI8L32512V ADSP-21060L MPC860 MO-47AE ADSP-21060L ADSP-21062L EDI8L32128V MPC860 TMS320LC31 PDF

    EDI8L32512V-AC

    Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
    Text: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC


    Original     		EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, EDI8L32512V-AC EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L PDF

    EDI8L32512V-AC

    Abstract: 8L32512V
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 M0-47AE EDI8L32512V EDI8L32512V-AC 8L32512V PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V12AI EDI8L32128V15AI ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE PDF

    cd 5151

    Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C cd 5151 ADSP-21060L ADSP-21062L MPC860 TMS320LC31 PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V15AI EDI8L32128V20AI ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE PDF

    60MHZ

    Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Configurable Organization


    Original     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V 60MHZ ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE PDF

    EDI8L32512V

    Abstract: No abstract text available
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.


    Original     		EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: White Electronic Designs EDI8L32128V 128KX32 CMOS HIGH SPEED STATIC RAM FEATURES 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		EDI8L32128V 128KX32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC EDI8L32128V20AC ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE PDF

    5630x

    Abstract: No abstract text available
    Text: EDI8L24512V 512Kx24 SRAM Module Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static DSP Memory Solution • Motorola DSP 5630x • Analog Devices SHARCTM Random Access Memory Array • Fast Access Times: 12, 15, 17, and 20ns The EDI8L24512V is a high speed, 3.3V, 12 megabit


    Original     		EDI8L24512V 512Kx24 5630x EDI8L24512V DSP5630x EDI8L24512V12AC EDI8L24512V15AC EDI8L24512V17AC 5630x PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
    Text: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC


    Original     		EDI8F32512V 512Kx32 EDI8F32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, ADSP-21060L ADSP-21062L EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL PDF

    Untitled

    Abstract: No abstract text available
    Text: WDI EDI8L24128V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC ADVANCED 128Kx24 CMOS High Speed Static RAM F e a tu re s The EDI8L24128V is a high speed, 3.3 volt, high perform­ ance, three megabit density Static RAM organized as a 128Kx24 bit array. Fully asynchronous circuitry is used, requiring no clocks or


    OCR Scan     		EDI8L24128V 128KX24 MO-47AE) MO-47AE PDF

    MO-47AE

    Abstract: No abstract text available
    Text: ^EDI E D I8 L 2 4 1 2 8 V ELECTRONIC DESIGNS. INC. | 128KX24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features The EDI8L24128V is a high speed, 3.3 volt, high perform­ 128Kx24 bit CMOS Static ance, three megabit density Static RAM organized as a


    OCR Scan     		EDI8L24128V 128KX24 MO-47AE) EDI8L24128V EDI8L24128V12AC MO-47AE PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129\taBC is a 3.3V, three megabit SRAM 128Kx24 bit CMOS Static Random Access Memory Array constructed with three 128Kx8 die mounted on a multi­


    OCR Scan     		I8L24129V 128KX24 128Kx24 EDI8L24129\taBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L PDF

    Untitled

    Abstract: No abstract text available
    Text: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP


    OCR Scan     		ED/8L322S6V 25SKx32 256KX32 21060L 21062L TMS320LC31 MO-47AE EDI8L32256V EDI8L32256V20AC PDF

    Untitled

    Abstract: No abstract text available
    Text: W EDI8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access


    OCR Scan     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-210621Random MO-47AE) 128KX32CMOSHigh EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC PDF

    ADSP2106XL

    Abstract: No abstract text available
    Text: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,


    OCR Scan     		EDI8L32512V 512Kx32SftAMModuk 512KX32CMOSHigh EDI8L32512V sTMS320LC31 EDI8L32256V ECN8L32512V ADSP2106XL PDF

    512KX24

    Abstract: 128KX24
    Text: ma DSP SOLUTIONS aSCTRONIC DÉSKSN& W C X24ASYNCHRONOUS FAMILY 128K AND 512Kx24 SV/3.3V EDI's x24 Asynchronous SRAM family is de­ signed in support of Analog Devices ADSP- * 2106x DSPs. The family includes densities of 128Kx24 and 5!2Kx24. The family of devices


    OCR Scan     		X24ASYNCHRONOUS 512Kx24 2106x 128Kx24 2Kx24. MO-47AE EDI8L24128CxxAC EDI8L24512CxxAC EDI8L24128VxxAC EDI8L24512VxxAC PDF

    256kx32

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
    Text: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP


    OCR Scan     		EDI8L32256V 256Kx32 21060L ADSP-21062L TMS320LC31 MO-47AE EDI8L32256V avai8L32256V15AC ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Theta-J PDF

    DSP5630x

    Abstract: EDI8L24129V
    Text: ^EDI ED I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC Asynchronous, 3.3V, 128Kx24 SRAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 10,12, and 15ns • Master Output Enable and Write Control • TTL Compatible Inputs and Outputs


    OCR Scan     		EDI8L24129V 128KX24 MO-163) DSP5630xâ EDI8L24129VxxBC 128Kx8 EDI8L24129V10BC EDI8L24128V12BC DSP5630x EDI8L24129V PDF

    JEDECMO-47AE

    Abstract: No abstract text available
    Text: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution • ADSP-21060L SHARC • ADSP-21062L (SHARC) • TMS320LC31 The ED I8L32512V is a high speed, 3.3V, 16 m egabit SRAM . The device is available w ith access tim es of 12,


    OCR Scan     		I8L32512V 512Kx32 ADSP-21062L I8L32512V ADSP-21060L TMS320LC31 MPC860 S320LC EDI8L32512V JEDECMO-47AE PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129VxxBC is a 3.3V, three m egabit SRAM 128Kx24 bit CMOS Static constructed with three 128Kx8 die mounted on a m ulti­ Random Access Memory Array


    OCR Scan     		I8L24129V 128KX24 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V SP5630x EDI8L24129V15BI MO-163 PDF